US5293073A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrode structure of a semiconductor device which uses a copper wire as a bonding wire
Assignee: Toshiba Corp
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Filing: 1993-03-24
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Granted: 1994-03-08
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Expires: 2013-03-24
Abstract
Abstract A semiconductor device comprises a semiconductor substrate, a first insulation film formed on the semiconductor substrate, a metal film for forming a bonding pad on the first insulation film, and a second insulation film which is formed between the first insulation film and the bonding pad and which is stiffer than the first insulation film.
Inventors
- 👤 Tadaaki Ono
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 09:50
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H10W70/00; H10W70/60; H10W72/00; H10W72/071; H10W72/075; H10W72/07531; H10W72/07532; H10W72/07533; H10W72/50; H10W72/531; H10W72/536; H10W72/551; H10W72/552; H10W72/5525; H10W72/59; H10W72/90; H10W72/921; H10W72/922; H10W72/923; H10W72/931; H10W72/934; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
128 words
A semiconductor device comprising: a semiconductor substrate, a first insulation film formed to said semiconductor substrate; a metal film having a bonding pad portion formed above said first insulation film; a second insulation film, containing carbon, formed between said first insulation film and said bonding pad portion and being in contact with said first insulation film and said bonding pad portion, said second insulation film being formed only directly under said bonding pad portion, said second insulation film being stiffer than said first insulation film for preventing stress from locally concentrating under said bonding pad portion, and said second insulation film having a thickness between 500 and 3,000Å; and a bonding wire made of one of copper and an alloy containing copper connected to said bonding pad portion.
Claim 2
Dependent Claim
128 words
A semiconductor device comprising: a semiconductor substrate, a first insulation film formed to said semiconductor substrate; a metal film having a bonding pad portion formed above said first insulation film; a second insulation film, containing carbon, formed between said first insulation film and said bonding pad portion and being in contact with said first insulation film and said bonding pad portion, said second insulation film being formed only directly under said bonding pad portion, said second insulation film being stiffer than said first insulation film for preventing stress from locally concentrating under said bonding pad portion, and said second insulation film having a thickness between 500 and 3,000Å; and a bonding wire made of one of copper and an alloy containing copper connected to said bonding pad portion.
Claim 3
Dependent Claim
16 words
A semiconductor device according to claim 1, wherein said second insulation film is a silicon compound.
Claim 4
Dependent Claim
142 words
A semiconductor device comprising: a semiconductor substrate o which a semiconductor element is formed; a first insulation film having a contact hole in a predetermined region thereof; a metal film having a bonding pad portion formed above said first insulation film, said metal film being connected to said semiconductor element through said contact hole; a second insulation film, containing carbon, formed between said first insulation film and said bonding pad portion and being in contact with said first insulation film and said bonding pad portion, said second insulation film being formed only directly under said bonding pad portion, and said second insulation film being stiffer than said first insulation film to prevent stress from locally concentrating under said bonding pad portion; and a bonding wire made of one of copper and an alloy containing copper and connected to said bonding pad portion.
Claim 5
Dependent Claim
142 words
A semiconductor device comprising: a semiconductor substrate o which a semiconductor element is formed; a first insulation film having a contact hole in a predetermined region thereof; a metal film having a bonding pad portion formed above said first insulation film, said metal film being connected to said semiconductor element through said contact hole; a second insulation film, containing carbon, formed between said first insulation film and said bonding pad portion and being in contact with said first insulation film and said bonding pad portion, said second insulation film being formed only directly under said bonding pad portion, and said second insulation film being stiffer than said first insulation film to prevent stress from locally concentrating under said bonding pad portion; and a bonding wire made of one of copper and an alloy containing copper and connected to said bonding pad portion.
Claim 6
Dependent Claim
16 words
A semiconductor device according to claim 3, wherein said second insulation film is a silicon compound.
References Cited (Backward Citations)
US3408238A
Cited
US3887407A
Cited
US3475234A
Cited
US3528168A
Cited
US4060828A
Cited
US4149307A
Cited
US4231050A
Cited
US4507673A
Cited
GB2092376A
Cited
US4646126A
Cited
US4796084A
Cited
EP0271110A2
Cited
EP0328262A2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-03-07 | 1997-09-06 | 1998-03-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-03-07 | 2001-09-06 | 2002-03-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-03-07 | 2005-09-06 | 2006-03-08 | $7700.00 | Window Closed / Lapsed |