EP0271110A2
Expired / Lapsed
EP
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Semiconductor device comprising an electrode pad
Assignee: Toshiba Corp
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Filing: 1987-12-10
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Granted: —
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Expires: 2007-12-10
Abstract
Abstract In a semiconductor device in which copper or copper alloy bonding wire (16) is bonded to an electrode pad (21) on a semiconductor element (13), the electrode pad (21) is formed of a first metal layer (18) ohmically contacting the semiconductor element, a second metal layer (19) hard enough not to be deformed at wire bonding step, and a third metal layer (20) for bonding a copper wire, to suppress variation in the electric characteristics of a bonding portion and the production of stain in the semiconductor element at wire bonding step.
Inventors
- 👤 Osamu C/O Patent Division Usuda
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 21:18
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W72/00; H10W72/90; H10W20/44; H10W20/4403; H10W20/4432; H10W20/4435; H10W72/50; H10W72/071; H10W72/075; H10W72/07531; H10W72/07532; H10W72/07533; H10W72/07551; H10W72/07553; H10W72/531; H10W72/536; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/5525; H10W72/59; H10W72/921; H10W72/923; H10W72/931; H10W72/934; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
117 words
A semiconductor device comprising a semiconductor element (13), an electrode pad (21) formed on the element, and a copper wire (16) bonded on the electrode pad and connecting the electrode pad to an external lead, characterized in that said electrode pad is substantially formed of: a first metal layer (18) formed on the semiconductor element, ohmically contacting the semiconductor element, and imposing no adverse influences on the functions of the semiconductor element, a second metal layer (19) formed on the first metal layer and hard enough to resist pressing force applied at wire bonding step; and a third metal layer (20) formed on the second metal layer and having a composition suitable for bonding a copper wire.
Claim 2
Dependent Claim
117 words
A semiconductor device comprising a semiconductor element (13), an electrode pad (21) formed on the element, and a copper wire (16) bonded on the electrode pad and connecting the electrode pad to an external lead, characterized in that said electrode pad is substantially formed of: a first metal layer (18) formed on the semiconductor element, ohmically contacting the semiconductor element, and imposing no adverse influences on the functions of the semiconductor element, a second metal layer (19) formed on the first metal layer and hard enough to resist pressing force applied at wire bonding step; and a third metal layer (20) formed on the second metal layer and having a composition suitable for bonding a copper wire.
Claim 3
Dependent Claim
33 words
A semiconductor device according to claim 1, characterized in that said first metal layer (18) is made of one metal selected from a group consisting of aluminum, aluminum alloys, gold and gold alloys.
Claim 4
Dependent Claim
29 words
A semiconductor device according to claim 2, characterized in that the thickness of said first metal layer (18) made of aluminum or aluminum alloys is 0.1 to 2.5 microns.
Claim 5
Dependent Claim
29 words
A semiconductor device according to claim 2, characterized in that the thickness of said first metal layer (18) made of gold or gold alloys is 0.2 to 2.5 microns.
Claim 6
Dependent Claim
39 words
A semiconductor device according to claim 1, characterized in that said second metal layer (19) is made of one metal selected from a group consisting of vanadium, vanadium alloys, nickel, nickel alloys, titanium, titanium alloys, tantalum and tantalum alloys.
Claim 7
Dependent Claim
32 words
A semiconductor device according to claim 5, characterized in that the thickness of said second metal layer (19) made of vanadium, vanadium alloys, tantalum, or tantalum alloys is 0.05 to 1 micron.
Claim 8
Dependent Claim
29 words
A semiconductor device according to claim 5, characterized in that the thickness of said second metal layer (19) made of nickel or nickel alloys is 300 to 10000 angstroms.
Claim 9
Dependent Claim
29 words
A semiconductor device according to claim 5, characterized in that the thickness of said second metal layer (19) made of titanium or titanium alloys is 300 to 10000 angstroms.
Claim 10
Dependent Claim
34 words
A semiconductor device according to claim 1, characterized in that said third metal layer (19) is made of one metal selected from a group consisting of aluminum and aluminum alloys, gold and gold alloys.
Claim 11
Dependent Claim
29 words
A semiconductor device according to claim 9, characterized in that the thickness of said third metal layer (20) made of aluminum or aluminum alloys is 0.1 to 5.0 microns.
Claim 12
Dependent Claim
29 words
A semiconductor device according to claim 9, characterized in that the thickness of said third metal layer (20) made of gold or gold alloys is 0.2 to 2.5 microns.
Claim 13
Dependent Claim
74 words
A semiconductor device according to claim 1, characterized in that the first metal layer (18) is made of aluminum or aluminum alloy and has a thickness of 0.5 to 2.5 microns, the second metal layer (19) is made of vanadium or vanadium alloy and has a thicknes of 0.1 to 0.8 microns, and the third metal layer (20) is made of aluminum or aluminum alloy and has a thickness of 0.5 to 5.0 microns.
Claim 14
Dependent Claim
31 words
A semiconductor device according to claim 1, characterized in that said electrode pad is formed by sequentially evaporating first to third metal layers and then patterning them by means of etching.
References Cited (Backward Citations)
No citation records indexed.
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