Patent US5285087A successfully refreshed from Google Patents.
US5285087A
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Heterojunction field effect transistor
Assignee: Mitsubishi Electric Corp
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Filing: 1991-06-21
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Granted: 1994-02-08
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Expires: 2011-06-21
Abstract
Abstract A heterojunction field effect transistor includes a semi-insulating crystalline layer, a pseudomorphic channel layer disposed on the semi-insulating crystalline layer, and an electron supply layer disposed on said pseudomorphic layer. The channel layer has a lattice constant equal to or close to that of the semi-insulating crystalline layer adjacent to semi-insulating crystalline layer and different from the semi-insulating crystalline layer adjacent to the electron supply layer.
Inventors
- 👤 Koichi Narita
- 👤 Kazuo Hayashi
- 👤 Takuji Sonoda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:55
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D30/4732
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
132 words
A heterojunction field effect transistor comprising: a semi-insulating indium phosphide crystalline layer; a pseudomorphic channel layer having a bandgap energy and disposed on said semi-insulating crystalline layer; an AlInAs buffer layer disposed between and contacting said semi-insulating indium phosphide layer and said pseudomorphic channel layer; an electron supply layer; and a spacer layer of AlInAs interposed between and contacting said pseudomorphic channel layer and said electron supply layer, said pseudomorphic channel layer being In w Ga 1-w As adjacent to said electron supply layer, where w is within a range of 0.50 to 0.70, the band gap energy of said pseudomorphic channel layer increasing to a maximum adjacent to said semi-insulating crystalline layer, and said pseudomorphic channel layer being In 0 .47 Ga 0 .53 As adjacent to said semi-insulating crystalline layer.
Claim 2
Dependent Claim
132 words
A heterojunction field effect transistor comprising: a semi-insulating indium phosphide crystalline layer; a pseudomorphic channel layer having a bandgap energy and disposed on said semi-insulating crystalline layer; an AlInAs buffer layer disposed between and contacting said semi-insulating indium phosphide layer and said pseudomorphic channel layer; an electron supply layer; and a spacer layer of AlInAs interposed between and contacting said pseudomorphic channel layer and said electron supply layer, said pseudomorphic channel layer being In w Ga 1-w As adjacent to said electron supply layer, where w is within a range of 0.50 to 0.70, the band gap energy of said pseudomorphic channel layer increasing to a maximum adjacent to said semi-insulating crystalline layer, and said pseudomorphic channel layer being In 0 .47 Ga 0 .53 As adjacent to said semi-insulating crystalline layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-02-07 | 1997-08-09 | 1998-02-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-02-07 | 2001-08-09 | 2002-02-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-02-07 | 2005-08-09 | 2006-02-08 | $7700.00 | Window Closed / Lapsed |