US5124762A
Expired / Lapsed
US
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Gaas heterostructure metal-insulator-semiconductor integrated circuit technology
Assignee: Honeywell Inc
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Filing: 1990-12-31
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Granted: 1992-06-23
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Expires: 2010-12-31
Abstract
Abstract Heterostructure metal insulator semiconductor integrated circuit technology resulting in, for instance, GaAs field-effect-transistors having much less gate current leakage and greater voltage range than like technology of the related art.
Inventors
- 👤 Timothy T. Childs
- 👤 Thomas Nohava
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 22:57
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/015; H10D30/40; H10D30/47; H10D30/471; H10D30/475; H10D30/60; H10D84/00; H10D84/01; H10D84/02; H10D84/05
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
125 words
A heterostructure metal insulator semiconductor comprising: a semi-insulating substrate; a layer of undoped gallium arsenide on said semi-insulting substrate; a layer of n doped indium gallium arsenide on said undoped gallium arsenide; a layer of undoped indium gallium arsenide on said n doped indium gallium arsenide; a layer of undoped aluminum gallium arsenide on said undoped indium gallium arsenide; a thin layer of silicon on part of said layer of undoped aluminum gallium arsenide; a layer of silicon dioxide on said silicon; a layer of tungsten silicide on said silicon dioxide; a first portion of said layers of aluminum gallium arsenide, undoped indium gallium arsenide and n doped indium gallium arsenide, having a first ion implant; and a first ohmic contact on said first implant.
Claim 2
Dependent Claim
125 words
A heterostructure metal insulator semiconductor comprising: a semi-insulating substrate; a layer of undoped gallium arsenide on said semi-insulting substrate; a layer of n doped indium gallium arsenide on said undoped gallium arsenide; a layer of undoped indium gallium arsenide on said n doped indium gallium arsenide; a layer of undoped aluminum gallium arsenide on said undoped indium gallium arsenide; a thin layer of silicon on part of said layer of undoped aluminum gallium arsenide; a layer of silicon dioxide on said silicon; a layer of tungsten silicide on said silicon dioxide; a first portion of said layers of aluminum gallium arsenide, undoped indium gallium arsenide and n doped indium gallium arsenide, having a first ion implant; and a first ohmic contact on said first implant.
Claim 3
Dependent Claim
40 words
Semiconductor of claim 1 further comprising: a second portion of said layers of aluminum gallium arsenide, undoped indium gallium arsenide, and n doped indium gallium arsenide, having a second ion implant; and a second ohmic contact on said second implant.
Claim 4
Dependent Claim
27 words
Semiconductor of claim 1 further comprising an interface of electron gas between said layer of undoped indium gallium arsenide and said layer of undoped aluminum gallium arsenide.
Claim 5
Dependent Claim
84 words
A semiconductor comprising: a substrate; a layer of undoped GaAs on said substrate; a layer of n doped InGaAs on said layer of undoped GaAs; a layer of undoped InGaAs on said layer of n doped InGaAs; a layer of undoped AlGaAs on said layer of undoped InGaAs; a layer of Si on a portion of said layer of undoped AlGaAs; a layer of SiO 2 on said layer of Si; and a layer of metal silicide on said layer of SiO 2 .
Claim 6
Dependent Claim
84 words
A semiconductor comprising: a substrate; a layer of undoped GaAs on said substrate; a layer of n doped InGaAs on said layer of undoped GaAs; a layer of undoped InGaAs on said layer of n doped InGaAs; a layer of undoped AlGaAs on said layer of undoped InGaAs; a layer of Si on a portion of said layer of undoped AlGaAs; a layer of SiO 2 on said layer of Si; and a layer of metal silicide on said layer of SiO 2 .
Claim 7
Dependent Claim
23 words
Semiconductor of claim 4, further comprising at least one ion implant in said layers of undoped AlGaAs, undoped InGaAs and n doped InGaAs.
Claim 8
Dependent Claim
23 words
Semiconductor of claim 5 wherein said layers of metal silicide, SiO 2 and Si form a mesa on said layer of undoped AlGaAs.
Claim 9
Dependent Claim
97 words
Semiconductor of claim 6 wherein: said layer of metal silicide has a thickness between 5 and 10,000 angstroms; said layer of SiO 2 has a thickness between 75 and 500 angstroms; said layer of Si has a thickness between 4 and 20 angstroms; said layer of undoped AlGaAs has a thickness between 25 and 250 angstroms; said layer of undoped InGaAs has a thickness between 20 and 150 angstroms; said layer of n doped InGaAs has a thickness between 20 and 150 angstroms; and said layer of undoped GaAs has a thickness between 0.2 and 1.0 micron.
Claim 10
Dependent Claim
22 words
Semiconductor of claim 7 wherein: the metal of said layer of metal silicide is tungsten; and said substrate is of semi-insulating GaAs.
Claim 11
Dependent Claim
25 words
Semiconductor of claim 8 further comprising an ohmic contact on said layer of undoped AlGaAs in an area of said at least one ion implant.
Claim 12
Dependent Claim
107 words
A semiconductor comprising: a semi-insulating substrate; a layer of undoped gallium arsenide on said semi-insulating substrate; a layer of n doped indium gallium arsenide on said undoped gallium arsenide; a layer of undoped indium gallium arsenide on said n doped indium gallium arsenide; a layer of undoped aluminum gallium arsenide on said undoped indium gallium arsenide; a layer of silicon dioxide on a portion of said layer of undoped aluminum gallium arsenide; a layer of tungsten silicide on said silicon dioxide; a first portion of said layers of undoped aluminum gallium arsenide, undoped indium gallium arsenide and n doped indium gallium arsenide, having a first ion implant.
Claim 13
Dependent Claim
107 words
A semiconductor comprising: a semi-insulating substrate; a layer of undoped gallium arsenide on said semi-insulating substrate; a layer of n doped indium gallium arsenide on said undoped gallium arsenide; a layer of undoped indium gallium arsenide on said n doped indium gallium arsenide; a layer of undoped aluminum gallium arsenide on said undoped indium gallium arsenide; a layer of silicon dioxide on a portion of said layer of undoped aluminum gallium arsenide; a layer of tungsten silicide on said silicon dioxide; a first portion of said layers of undoped aluminum gallium arsenide, undoped indium gallium arsenide and n doped indium gallium arsenide, having a first ion implant.
Claim 14
Dependent Claim
51 words
Semiconductor of claim 10 further comprising: a second portion of said layers of undoped aluminium gallium arsenide, undoped indium gallium arsenide, and n doped indium gallium arsenide, having a second ion implant; a first ohmic contact on said first ion implant; and a second ohmic contact on said second ion implant.
Claim 15
Dependent Claim
27 words
Semiconductor of claim 10 further comprising an interface of electron gas between said layer of undoped indium gallium arsenide and said layer of undoped aluminum gallium arsenide.
References Cited (Backward Citations)
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