US5036374A
Expired / Lapsed
US
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Insulated gate semiconductor device using compound semiconductor at the channel
Assignee: Seiko Instruments Inc
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Filing: 1988-04-11
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Granted: 1991-07-30
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Expires: 2008-04-11
Abstract
Abstract An insulated gate semiconductor device comprises a channel region of compound semiconductor of one conductivity type, source and drain regions of the other conductivity type spaced apart by the channel region, a gate insulation film provided on the channel region, a gate electrode provided on the insulating film and a silicon monocrystal thin film having a thickness of 100 atoms or less inserted between the channel region and the gate insulation film.
Inventors
- 👤 Masafumi Shimbo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:12
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/82; H10D62/822; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D30/60; H10D30/751; H10D64/00; H10D64/60; H10D64/602
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
91 words
An insulated gate semiconductor device comprising: a channel region having one conductivity type; source and drain regions having the opposite conductivity type spaced apart from each other by said channel region; a silicon dioxide gate insulation film provided on said channel region; and a gate electrode provided on said gate insulation film; wherein at least a part of said channel region comprises a semiconductor crystal other than silicon, and a single crystal silicon thin film less than 100 atoms thick being provided between said channel region and said gate insulation film.
Claim 2
Dependent Claim
91 words
An insulated gate semiconductor device comprising: a channel region having one conductivity type; source and drain regions having the opposite conductivity type spaced apart from each other by said channel region; a silicon dioxide gate insulation film provided on said channel region; and a gate electrode provided on said gate insulation film; wherein at least a part of said channel region comprises a semiconductor crystal other than silicon, and a single crystal silicon thin film less than 100 atoms thick being provided between said channel region and said gate insulation film.
Claim 3
Dependent Claim
21 words
The insulated gate semiconductor device defined in claim 1, wherein said semiconductor crystal other than silicon comprises a III-V compound semiconductor.
Claim 4
Dependent Claim
31 words
The insulated gate semiconductor device defined in claim 2, wherein said semiconductor crystal other than silicon comprises a III-V compound semiconductor formed on a substrate of Group IV semiconductor single crystal.
Claim 5
Dependent Claim
46 words
The insulated gate semiconductor device defined in claim 1, wherein the surface potential of said channel region is controlled by at least one of the film thickness, conductivity type of a doped impurity and concentration of a doped impurity of said single crystal silicon thin film.
Claim 6
Dependent Claim
46 words
The insulated gate semiconductor device defined in claim 2, wherein the surface potential of said channel region is controlled by at least one of the film thickness, conductivity type of a doped impurity and concentration of a doped impurity of said single crystal silicon thin film.
Claim 7
Dependent Claim
46 words
The insulated gate semiconductor device defined in claim 3, wherein the surface potential of said channel region is controlled by at least one of the film thickness, conductivity type of a doped impurity and concentration of a doped impurity of said single crystal silicon thin film.
Claim 8
Dependent Claim
90 words
An insulated gate semiconductor device comprising: a channel region having one conductivity type; source and drain regions having the opposite conductivity type spaced apart from each other by said channel region; a silicon nitride gate insulation film provided on said channel region; and gate electrode provided on said gate insulation film; wherein at least a part of said channel region comprises a semiconductor crystal other than silicon, and a single crystal silicon thin film less than 100 atoms thick being provided between said channel region and said gate insulation film.
Claim 9
Dependent Claim
90 words
An insulated gate semiconductor device comprising: a channel region having one conductivity type; source and drain regions having the opposite conductivity type spaced apart from each other by said channel region; a silicon nitride gate insulation film provided on said channel region; and gate electrode provided on said gate insulation film; wherein at least a part of said channel region comprises a semiconductor crystal other than silicon, and a single crystal silicon thin film less than 100 atoms thick being provided between said channel region and said gate insulation film.
Claim 10
Dependent Claim
21 words
The insulated gate semiconductor device defined in claim 7, wherein said semiconductor crystal other than silicon comprises a III-V compound semiconductor.
Claim 11
Dependent Claim
31 words
The insulate gate semiconductor device defined in claim 8, wherein said semiconductor crystal other than silicon comprises a III-V compound semiconductor formed on a substrate of Group IV semiconductor single crystal.
Claim 12
Dependent Claim
46 words
The insulated gate semiconductor device defined in claim 7, wherein the surface potential of said channel region is controlled by at least one of the film thickness, conductivity type of a doped impurity and concentration of a doped impurity of said single crystal silicon thin film.
Claim 13
Dependent Claim
46 words
The insulated gate semiconductor device defined in claim 8, wherein the surface potential of said channel region is controlled by at least one of the film thickness, conductivity type of a doped impurity and concentration of a doped impurity of said single crystal silicon thin film.
Claim 14
Dependent Claim
46 words
The insulated gate semiconductor device defined in claim 9, wherein the surface potential of said channel region is controlled by at least one of the film thickness, conductivity type of a doped impurity and concentration of a doped impurity of said single crystal silicon thin film.
Claim 15
Dependent Claim
102 words
An insulated gate semiconductor device comprising: a channel region having one conductivity type with at least a part of said channel region comprising a semiconductor crystal not including silicon; a source region of the opposite conductivity type; a drain region of the opposite conductivity type spaced apart from the source region by said channel region; a gate insulation film on said channel region composed of silicon dioxide or silicon nitride; a gate electrode on said gate insulation film; and a single crystal silicon thin film having a thickness less than 100 atoms disposed between said channel region and said gate insulation film.
Claim 16
Dependent Claim
102 words
An insulated gate semiconductor device comprising: a channel region having one conductivity type with at least a part of said channel region comprising a semiconductor crystal not including silicon; a source region of the opposite conductivity type; a drain region of the opposite conductivity type spaced apart from the source region by said channel region; a gate insulation film on said channel region composed of silicon dioxide or silicon nitride; a gate electrode on said gate insulation film; and a single crystal silicon thin film having a thickness less than 100 atoms disposed between said channel region and said gate insulation film.
Claim 17
Dependent Claim
21 words
The insulated gate semiconductor device defined in claim 13, wherein said semiconductor crystal not including silicon comprises a III-V compound semiconductor.
Claim 18
Dependent Claim
31 words
The insulated gate semiconductor device defined in claim 13, wherein said semiconductor crystal not including silicon comprises a III-V compound semiconductor formed on a substrate of Group IV semiconductor single crystal.
Claim 19
Dependent Claim
45 words
The insulated gate semiconductor device defined in claim 13, wherein the channel region has a surface potential controlled by at least one of the film thickness, conductivity type of a doped impurity and concentration of a doped impurity of said single crystal silicon thin film.
Claim 20
Dependent Claim
44 words
The insulated gate semiconductor device defined in claim 14, wherein the channel region has a surface potential controlled by at least one of the film thickness, conductivity of a doped impurity and concentration of a doped impurity of said single crystal silicon thin film.
Claim 21
Dependent Claim
45 words
The insulated gate semiconductor device defined in claim 15, wherein the channel region has a surface potential controlled by at least one of the film thickness, conductivity type of a doped impurity and concentration of a doped impurity of said single crystal silicon thin film.
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