Inp semiconductor device

Abstract

Abstract PURPOSE:To obtain an InP semiconductor device, in which currents hardly flow through insulating films between a gate electrode and an InP semiconductor substrate, by forming the insulating film consisting of an InP oxide film on the surface of the substrate and shaping the insulating film composed of SiO2 or Si2N4 or the like on the insulating film. CONSTITUTION:A source diffusion layer 12, a drain diffusion layer 13 and an insulating film 14 consisting of an InP oxide film are formed on the surface of an InP substrate 11, an insulating film 15 composed of an SiO2 film or Si3N4 or the like is shaped on the surface of the insulating film 14, and a gate electrode 16 is shaped on the insulating film 15. Accordingly, an MOS type FET in which currents hardly flow through the insulating films 14, 15 between the gate electrode 16 and the substrate 11 is obtained.

Inventors

• 👤 Seiichi Iwamatsu
• 👤 誠一 岩松

Bibliographic Details