US5099295A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Compound semiconductor device which utilizes an electron supply layer which has a graded composition so that a constituent varies in percentage composition from one side to the other
Assignee: Sony Corp
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Filing: 1990-01-22
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Granted: 1992-03-24
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Expires: 2010-01-22
Abstract
Abstract A compound semiconductor device having a channel layer and an electron supply layer and using a two-dimensional electron gas. The channel layer near the interface between the channel layer and the electron supply layer is formed as a graded layer. It is possible to realize a compound semiconductor device which has good characteristics and which can be easily fabricated.
Inventors
- 👤 Masamichi Ogawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:29
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/82; H10D62/824; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D30/4732
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
76 words
A compound semiconductor device comprising a semiconductor layer of undoped GaAs, a graded channel layer of InGaAs formed on said semiconductor layer, an n-type electron supply layer of n-type AlGaAs formed on said graded channel layer, said graded channel layer has a thickness of about 300 Angstroms and wherein the In composition of said graded channel layer varies from zero per cent adjacent said GaAs layer to about 20 per cent adjacent said n-type AlGaAs layer.
Claim 2
Dependent Claim
76 words
A compound semiconductor device comprising a semiconductor layer of undoped GaAs, a graded channel layer of InGaAs formed on said semiconductor layer, an n-type electron supply layer of n-type AlGaAs formed on said graded channel layer, said graded channel layer has a thickness of about 300 Angstroms and wherein the In composition of said graded channel layer varies from zero per cent adjacent said GaAs layer to about 20 per cent adjacent said n-type AlGaAs layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-24 | 1995-09-23 | 1996-03-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-24 | 1999-09-23 | 2000-03-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-24 | 2003-09-23 | 2004-03-24 | $7700.00 | Window Closed / Lapsed |