US4827320A
Expired / Lapsed
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Semiconductor device with strained InGaAs layer
Assignee: University of Illinois at Chicago
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Filing: 1986-09-19
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Granted: 1989-05-02
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Expires: 2006-09-19
Abstract
Abstract A strained In y Ga l-y As layer is employed in a GaAs/Al x Ga l-x As transistor. Since the bandgap of In y Ga l-y As is much smaller than that of GaAs, there is no need for a troublesome large-mole-fraction of aluminum in the Al x Ga l-x As layer in order to maintain a large bandgap discontinuity. This and other advantages of the structure set forth result in devices having improved operating characteristics.
Inventors
- 👤 Hadis Morkoc
- 👤 John Klem
- 👤 William T. Masselink
- 👤 Timothy S. Henderson
- 👤 Andrew A. Ketterson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 21:57
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/82; H10D62/824; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D30/4732
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
52 words
A semiconductor device, comprising: a first semiconductor layer of gallium arsenide; a strained layer of indium gallium arsenide disposed on said first semiconductor layer; a layer of aluminum gallium arsenide disposed on said layer of indium gallium arsenide; means for coupling electrical signals to and from at least some of said layers.
Claim 2
Dependent Claim
52 words
A semiconductor device, comprising: a first semiconductor layer of gallium arsenide; a strained layer of indium gallium arsenide disposed on said first semiconductor layer; a layer of aluminum gallium arsenide disposed on said layer of indium gallium arsenide; means for coupling electrical signals to and from at least some of said layers.
Claim 3
Dependent Claim
32 words
The device as defined by claim 1 wherein said indium gallium arsenide layer comprises a layer of In y Ga 1-y As, where y is in the range between 0.10 and 0.25.
Claim 4
Dependent Claim
32 words
The device as defined by claim 1 wherein said layer of aluminum gallium arsenide comprises a layer of Al x Ga 1-x As, where x is in the range 0.05 to 0.20.
Claim 5
Dependent Claim
32 words
The device as defined by claim 2 wherein said layer of aluminum gallium arsenide comprises a layer of Al x Ga 1-x As, where x is in the range 0.05 to 0.20.
Claim 6
Dependent Claim
19 words
The device as defined by claim 1 wherein said layer of indium gallium arsenide is a quantum well layer.
Claim 7
Dependent Claim
20 words
The device as defined by claim 1 further comprising a semiconductor overlayer disposed on said layer of aluminum gallium arsenide.
Claim 8
Dependent Claim
18 words
The device as defined by claim 6 wherein said semiconductor overlayer comprises a further layer of gallium arsenide.
Claim 9
Dependent Claim
34 words
The device as defined by claim 1 wherein said further layer of aluminum gallium arsenide includes a set-back layer portion of undoped aluminum gallium arsenide and a layer portion of doped aluminum gallium arsenide.
Claim 10
Dependent Claim
69 words
A field effect transistor device, comprising: a first semiconductor layer of gallium arsenide; a channel layer of indium gallium arsenide disposed as a strained layer on said first semiconductor layer; a layer of aluminum gallium arsenide disposed on said layer of indium gallium arsenide; source and drain electrodes for coupling signals to and from said channel layer; a gate electrode for coupling a gate signal to said channel layer.
Claim 11
Dependent Claim
69 words
A field effect transistor device, comprising: a first semiconductor layer of gallium arsenide; a channel layer of indium gallium arsenide disposed as a strained layer on said first semiconductor layer; a layer of aluminum gallium arsenide disposed on said layer of indium gallium arsenide; source and drain electrodes for coupling signals to and from said channel layer; a gate electrode for coupling a gate signal to said channel layer.
Claim 12
Dependent Claim
31 words
The device as defined by claim 9 wherein said indium gallium arsenide layer comprises a layer of In y Ga 1-y As, where y is in the range 0.10 to 0.25.
Claim 13
Dependent Claim
32 words
The device as defined by claim 10 wherein said layer of aluminum gallium arsenide comprises a layer of Al x Ga 1-x As, where x is in the range 0.05 to 0.20.
Claim 14
Dependent Claim
19 words
The device as defined by claim 10 wherein said layer of indium gallium arsenide is a quantum well layer.
Claim 15
Dependent Claim
19 words
The device as defined by claim 11 wherein said layer of indium gallium arsenide is a quantum well layer.
Claim 16
Dependent Claim
20 words
The device as defined by claim 9 further comprising a semiconductor overlayer disposed on said layer of aluminum gallium arsenide.
Claim 17
Dependent Claim
18 words
The device as defined by claim 14, wherein said semiconductor overlayer comprises a further layer of gallium arsenide.
Claim 18
Dependent Claim
98 words
A field effect transistor device, comprising: a first gallium arsenide layer; a channel layer of indium gallium arsenide disposed as a strained layer on said first layer; a layer of aluminum gallium arsenide disposed on said layer of indium gallium arsenide; a second layer of gallium arsenide disposed on said layer of aluminum gallium arsenide; spaced source and drain electrodes disposed on said second layer of gallium arsenide, each of said electrodes coupling to said channel layer; and a gate electrode between said source and drain electrodes, said gate electrode coupling to said layer of aluminum gallium arsenide.
Claim 19
Dependent Claim
98 words
A field effect transistor device, comprising: a first gallium arsenide layer; a channel layer of indium gallium arsenide disposed as a strained layer on said first layer; a layer of aluminum gallium arsenide disposed on said layer of indium gallium arsenide; a second layer of gallium arsenide disposed on said layer of aluminum gallium arsenide; spaced source and drain electrodes disposed on said second layer of gallium arsenide, each of said electrodes coupling to said channel layer; and a gate electrode between said source and drain electrodes, said gate electrode coupling to said layer of aluminum gallium arsenide.
Claim 20
Dependent Claim
32 words
The device as defined by claim 16 wherein said indium gallium arsenide layer comprises a layer of In y Ga 1-y As, where y is in the range between 0.10 and 0.25.
Claim 21
Dependent Claim
32 words
The device as defined by claim 16, wherein said layer of aluminum gallium arsenide comprises a layer of Al x Ga 1-x As, where x is in the range 0.05 to 0.20.
Claim 22
Dependent Claim
32 words
The device as defined by claim 17, wherein said layer of aluminum gallium arsenide comprises a layer of Al x Ga 1-x As, where x is in the range 0.05 to 0.20.
Claim 23
Dependent Claim
19 words
The device as defined by claim 16, wherein said layer of indium gallium arsenide is a quantum well layer.
References Cited (Backward Citations)
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