EP0199435A2
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EP
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Field effect semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1986-02-27
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Granted: —
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Expires: 2006-02-27
Abstract
Abstract A field effect semiconductor device which utilizes a two-dimensional electron gas is composed of a semi-insulating substrate (1 an i-type active layer (2); a superlattice structure layer which comprises a first i-type thin layer (3A), a thin layer (3B) doped with dopant by an atomic plane doping process, and a second i-type thin layer (3C), these thin layers forming a quantum well; generally an n-type layer; and electrodes (6, 7, 8) for source, drain, and gate.
Inventors
- 👤 Tomonori Ishikawa
- 👤 Shigehiko Sasa
- 👤 Satoshi Hiyamizu
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 00:08
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/475; H10D30/4755; H10D30/80; H10D30/87; H10D62/00; H10D62/60; H10D62/605; H10D62/80; H10D62/82; H10D62/824
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
85 words
A field effect semiconductor device in which a two-dimensional electron gas is utilized comprising: a semi-insulating substrate; an i-type active layer formed on said substrate; a superlattice structure layer comprising a first i-type thin layer on said active layer, a thin well layer doped with dopant by an atomic plane doping process and formed on said first thin layer, and a second i-type thin layer formed on said doped thin well layer, these layers forming a quantum well; and electrodes for source, drain and gate.
Claim 2
Dependent Claim
85 words
A field effect semiconductor device in which a two-dimensional electron gas is utilized comprising: a semi-insulating substrate; an i-type active layer formed on said substrate; a superlattice structure layer comprising a first i-type thin layer on said active layer, a thin well layer doped with dopant by an atomic plane doping process and formed on said first thin layer, and a second i-type thin layer formed on said doped thin well layer, these layers forming a quantum well; and electrodes for source, drain and gate.
Claim 3
Dependent Claim
40 words
A semiconductor device according to claim 1, wherein said superlattice structure layer consists of said first and second i-type thin layers and said doped thin well layer, and, in addition a : doped layer formed on said superlattice structure layer.
Claim 4
Dependent Claim
22 words
A semiconductor device according to claim 1 or 2, wherein said doped thin well layer has at least one dopant atomic plane.
Claim 5
Dependent Claim
44 words
A semiconductor device according to claim 1, wherein said superlattice structure layer has a multiquantum well structure in which i-type thin layers and thin well layers are alternately formed, at least one of said thin well layer being doped with a dopant atomic plane.
Claim 6
Dependent Claim
43 words
5 . A semiconductor device according to any preceding claim wherein said semi-insulating substrate is of GaAs, said i-type active layer is of GaAs, said first and second i-type thin layers are of AlAs, and said doped thin well layer is of GaAs.
Claim 7
Dependent Claim
45 words
A semiconductor- device according to any one of claims 1 to 4, wherein said semi-insulating substrate is of InP, said i-type active layer is of InGaAs said first and second i-type thin layers are of InAlAs, and said doped thin well layer is of InGaAs.
Claim 8
Dependent Claim
101 words
A field effect semiconductor device in which a two-dimensional electron gas is utilized comprising: a semi-insulating GaAs substrate; an i-type GaAs active layer formed on said substrate; a superlattice structure layer comprising a first i-type AlAs thin layer on said active layer, a GaAs thin layer doped with dopant by an atomic plane doping process and formed on said first AlAs thin layer, and a second i-type AlAs thin layer formed on said doped GaAs thin layer, these layers forming a GaAs quantum well; an n-type AlGaAs layer formed on said superlattice structure layer; and electrodes for source, drain and gate.
Claim 9
Dependent Claim
101 words
A field effect semiconductor device in which a two-dimensional electron gas is utilized comprising: a semi-insulating GaAs substrate; an i-type GaAs active layer formed on said substrate; a superlattice structure layer comprising a first i-type AlAs thin layer on said active layer, a GaAs thin layer doped with dopant by an atomic plane doping process and formed on said first AlAs thin layer, and a second i-type AlAs thin layer formed on said doped GaAs thin layer, these layers forming a GaAs quantum well; an n-type AlGaAs layer formed on said superlattice structure layer; and electrodes for source, drain and gate.
Claim 10
Dependent Claim
26 words
A semiconductor device according to claim 7, wherein the molecular ratio (x) of AlAs to GaAs of said Al x Ga 1-x As layer is 0.2.
References Cited (Backward Citations)
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