Compound semiconductor device with superlattice channel region

Claim 2

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application, a specific electron mobility which is less than that of the second type of the compound semiconductor thin-film layers in high electric field application, and causes impact ionization of valence electrons to occur at lower electric field application than the second type of said compound semiconductor thin-film layers; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through said second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of either InAs or InSb compound semiconductor, whereas the second type of said compound semiconductor thin-film layers are substantially composed of InP compound semiconductor.

Claim 3

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application, a specific electron mobility which is less than that of the second type of the compound semiconductor thin-film layers in high electric field application, and causes impact ionization of valence electrons to occur at lower electric field application than the second type of said compound semiconductor thin-film layers; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through said second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of either InAs or InSb compound semiconductor, whereas the second type of said compound semiconductor thin-film layers are substantially composed of either InP or GaAs compound semiconductor; wherein n-type impurities are doped only in the second type of said compound semiconductor thin-film layers.

Claim 4

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application, a specific electron mobility which is less than that of the second type of the compound semiconductor thin-film layers in high electric field application, and causes impact ionization of valence electrons to occur at lower electric field application than the second type of said compound semiconductor thin-film layers; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through said second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of either InAs or InSb compound semiconductor, whereas the second type of said compound semiconductor thin-film layers are substantially composed of either InP or GaAs compound semiconductor; wherein n-type impurities are doped only in the second type of said compound semiconductor thin-film layers.

Claim 5

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application, a specific electron mobility which is less than that on the second type of the compound semiconductor thin-film layers in high electric field application, and causes impact ionization of valence electrons to occur at lower electric field application than the second type of said compound semiconductor thin-film layers; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through said second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of either InAs or InSb compound semiconductor, whereas the second type of said compound semiconductor thin-film layers are substantially composed of either InP or GaAs compound semiconductor; and wherein said first type of said compound semiconductor thin-film layers are substantially compound of InAs compound semiconductor, whereas the second type of said compound are substantially composed of InP compound semiconductor, where said first type of said compound semiconductor thin-film layers are provided with a certain thickness ranging from about 24Å to a maximum of about 75Å.

Claim 6

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application, a specific electron mobility which is less than that on the second type of the compound semiconductor thin-film layers in high electric field application, and causes impact ionization of valence electrons to occur at lower electric field application than the second type of said compound semiconductor thin-film layers; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through said second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of either InAs or InSb compound semiconductor, whereas the second type of said compound semiconductor thin-film layers are substantially composed of either InP or GaAs compound semiconductor; and wherein said first type of said compound semiconductor thin-film layers are substantially compound of InAs compound semiconductor, whereas the second type of said compound are substantially composed of InP compound semiconductor, where said first type of said compound semiconductor thin-film layers are provided with a certain thickness ranging from about 24Å to a maximum of about 75Å.

Claim 7

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application, a specific electron mobility which is less than that of the second type of the compound semiconductor thin-film layers in high electric field application, and causes impact ionization of valence electrons to occur at lower electric field application than the second type of said compound semiconductor thin-film layers; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through said second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of either InAs or InSb compound semiconductor, whereas the second type of said compound semiconductor thin-film layers are substantially composed of either InP or GaAs compound semiconductor; and wherein said first type of said compound semiconductor thin-film layers are substantially composed of InAs compound semiconductor, whereas the second type of said compound semiconductor thin-film layers are substantially composed of GaAs compound semiconductor, where said first type of said compound semiconductor thin-film layers are provided with a certain thickness ranging from about 24Å to a maximum of about 60Å.

Claim 8

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application, a specific electron mobility which is less than that of the second type of the compound semiconductor thin-film layers in high electric field application, and causes impact ionization of valence electrons to occur at lower electric field application than the second type of said compound semiconductor thin-film layers; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through said second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of either InAs or InSb compound semiconductor, whereas the second type of said compound semiconductor thin-film layers are substantially composed of either InP or GaAs compound semiconductor; and wherein said first type of said compound semiconductor thin-film layers are substantially composed of InAs compound semiconductor, whereas the second type of said compound semiconductor thin-film layers are substantially composed of GaAs compound semiconductor, where said first type of said compound semiconductor thin-film layers are provided with a certain thickness ranging from about 24Å to a maximum of about 60Å.

Claim 9

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application, a specific electron mobility which is less than that of the second type of the compound semiconductor thin-film layers in high electric field application, and causes impact ionization of valence electrons to occur at lower electric field application than the second type of said compound semiconductor thin-film layers; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through the second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of either InAs or InSb compound semiconductor, whereas the second type of said compound semiconductor thin-film layers are substantially composed of InAs y P 1-y (0<y<1.0) compound semiconductor mixed crystal.

Claim 10

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application, a specific electron mobility which is less than that of the second type of the compound semiconductor thin-film layers in high electric field application, and causes impact ionization of valence electrons to occur at lower electric field application than the second type of said compound semiconductor thin-film layers; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through the second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of either InAs or InSb compound semiconductor, whereas the second type of said compound semiconductor thin-film layers are substantially composed of InAs y P 1-y (0<y<1.0) compound semiconductor mixed crystal.

Claim 11

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application, a specific electron mobility which is less than that of the second type of the compound semiconductor thin-film layers in high electric field application, and causes impact ionization of valence electrons to occur at lower electric field application than the second type of said compound semiconductor thin-film layers; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through said the second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of InAs y P 1-y (0.5<y<1.0) of compound semiconductor mixed crystal, whereas the second type of said compound semiconductor thin-film layers are substantially composed of InAs y P 1-y (0<y<0.5) compound semiconductor mixed crystal.

Claim 12

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application, a specific electron mobility which is less than that of the second type of the compound semiconductor thin-film layers in high electric field application, and causes impact ionization of valence electrons to occur at lower electric field application than the second type of said compound semiconductor thin-film layers; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through said the second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of InAs y P 1-y (0.5<y<1.0) of compound semiconductor mixed crystal, whereas the second type of said compound semiconductor thin-film layers are substantially composed of InAs y P 1-y (0<y<0.5) compound semiconductor mixed crystal.

Claim 13

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application, a specific electron mobility which is less than that of the second type of the compound semiconductor thin-film layers at lower electric field application; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through said second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of either InAs or InSb compound semiconductor, whereas the second type of said compound semiconductor thin-film layers are substantially composed of InP compound semiconductor.

Claim 14

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application, a specific electron mobility which is less than that of the second type of the compound semiconductor thin-film layers at lower electric field application; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through said second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of either InAs or InSb compound semiconductor, whereas the second type of said compound semiconductor thin-film layers are substantially composed of InP compound semiconductor.

Claim 15

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application and causes impact ionization of valence electrons to occur at lower electric field application than the second type of said compound semiconductor thin-film layers; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through said second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of either InAs or InSb compound semiconductor, whereas the second type of said compound semiconductor thin-film layers are substantially composed of InP compound semiconductor.

Claim 16

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application and causes impact ionization of valence electrons to occur at lower electric field application than the second type of said compound semiconductor thin-film layers; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through said second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of either InAs or InSb compound semiconductor, whereas the second type of said compound semiconductor thin-film layers are substantially composed of InP compound semiconductor.

Claim 17

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application, a specific electron mobility which is less than that of the second type of the compound semiconductor thin-film layers in high electric field application; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through the second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of either InAs or InSb compound semiconductor, whereas the second type of said compound semiconductor thin-film layers are substantially composed of InAs y P 1-y (0<y<1.0) compound semiconductor mixed crystal.

Claim 18

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application, a specific electron mobility which is less than that of the second type of the compound semiconductor thin-film layers in high electric field application; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through the second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of either InAs or InSb compound semiconductor, whereas the second type of said compound semiconductor thin-film layers are substantially composed of InAs y P 1-y (0<y<1.0) compound semiconductor mixed crystal.

Claim 19

A compound semiconductor device incorporating a channel layer which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application and causes impact ionization of valence electrons to occur at lower electric field application than the second type of said compound semiconductor thin-film layers; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through the second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of either InAs or InSb compound semiconductor, whereas the second type of said compound semiconductor thin-film layers are substantially composed of InAs y P 1-y (0<y<1.0) compound semiconductor mixed crystal.

Claim 20

A compound semiconductor device incorporating a channel layer which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application and causes impact ionization of valence electrons to occur at lower electric field application than the second type of said compound semiconductor thin-film layers; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through the second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of either InAs or InSb compound semiconductor, whereas the second type of said compound semiconductor thin-film layers are substantially composed of InAs y P 1-y (0<y<1.0) compound semiconductor mixed crystal.

Claim 21

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application, a specific electron mobility which is less than that of the second type of the compound semiconductor thin-film layers in high electric field application; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through said the second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of InAs y P 1-y (0.5<y<1.0) of compound semiconductor mixed crystal, whereas the second type of said compound semiconductor thin-film layers are substantially composed of InAs y P 1-y (0<y<0.5) compound semiconductor mixed crystal.

Claim 22

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application, a specific electron mobility which is less than that of the second type of the compound semiconductor thin-film layers in high electric field application; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through said the second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of InAs y P 1-y (0.5<y<1.0) of compound semiconductor mixed crystal, whereas the second type of said compound semiconductor thin-film layers are substantially composed of InAs y P 1-y (0<y<0.5) compound semiconductor mixed crystal.

Claim 23

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application and causes impact ionization of valence electrons to occur at lower electric field application than the second type of said compound semiconductor thin-film layers; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through said the second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of InAs y P 1-y (0.5<y<1.0) of compound semiconductor mixed crystal, whereas the second type of said compound semiconductor thin-film layers are substantially composed of InAs y P 1-y (0<y<0.5) compound semiconductor mixed crystal.

Claim 24

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application and causes impact ionization of valence electrons to occur at lower electric field application than the second type of said compound semiconductor thin-film layers; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through said the second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of InAs y P 1-y (0.5<y<1.0) of compound semiconductor mixed crystal, whereas the second type of said compound semiconductor thin-film layers are substantially composed of InAs y P 1-y (0<y<0.5) compound semiconductor mixed crystal.

Claim 25

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application, a specific electron mobility which is less than that of the second type of the compound semiconductor thin-film layers in high electric field application; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through said second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of InSb compound semiconductor, whereas the second type of said compound semiconductor thin-film layers is substantially composed of GaAs compound semiconductor.

Claim 26

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application, a specific electron mobility which is less than that of the second type of the compound semiconductor thin-film layers in high electric field application; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through said second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of InSb compound semiconductor, whereas the second type of said compound semiconductor thin-film layers is substantially composed of GaAs compound semiconductor.

Claim 27

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application, and caused impact ionization of valence electrons to occur at lower electric field application than the second type of said compound semiconductor thin-film layers; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through said second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of either InSb compound semiconductor, whereas the second type of said compound semiconductor thin-film layers are substantially composed of GaAs compound semiconductor.

Claim 28

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application, and caused impact ionization of valence electrons to occur at lower electric field application than the second type of said compound semiconductor thin-film layers; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through said second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of either InSb compound semiconductor, whereas the second type of said compound semiconductor thin-film layers are substantially composed of GaAs compound semiconductor.

Claim 29

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application, a specific electron mobility which is less than that of the second type of the compound semiconductor thin-film layers in high electric field application, and causes impact ionization of valence electrons to occur at lower electric field application than the second type of said compound semiconductor thin-film layers; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through said second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of InSb compound semiconductor, whereas the second type of said compound semiconductor thin-film layers are substantially composed of GaAs compound semiconductor.

Claim 30

A compound semiconductor device incorporating a channel layer coupled to a source electrode and a drain electrode and which is made of periodically layering compound semiconductor thin-film layers substantially being different from each other comprising; a first type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being less than that of a second type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of the second type of said compound semiconductor thin-film layers in low electric field application, a specific electron mobility which is less than that of the second type of the compound semiconductor thin-film layers in high electric field application, and causes impact ionization of valence electrons to occur at lower electric field application than the second type of said compound semiconductor thin-film layers; and the second type of said compound semiconductor thin-film layers having a specific energy difference between conduction band and valence band being more than that of said first type of said compound semiconductor thin-film layers, a specific electron mobility which is greater than that of said first type of said compound semiconductor thin-film layers in high electric field application, allows conduction electrons to preferentially flow through said first type of said compound semiconductor thin-film layers in low electric field application and also conduction electrons highly energized by acceleration to preferentially flow through said second type of said compound semiconductor thin-film layers in high electric field application, and also allows conduction electrons highly energized by acceleration in high electric field application to move from said first type of said compound semiconductor thin-film layers to the second type of said compound semiconductor thin-film layers before said conduction electrons cause impact ionization of valence electrons and inter-valley scattering to occur in said conduction band inside of said first type of said compound semiconductor thin-film layers; wherein said first type of said compound semiconductor thin-film layers are substantially composed of InSb compound semiconductor, whereas the second type of said compound semiconductor thin-film layers are substantially composed of GaAs compound semiconductor.