US4697197A
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Transistor having a superlattice
Assignee: RCA Corp
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Filing: 1985-10-11
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Granted: 1987-09-29
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Expires: 2005-10-11
Abstract
Abstract A transistor has a superlattice in the channel region. The superlattice has alternate interleaved layers of undoped wide and narrow bandgap materials with the layers extending in a direction parallel to the channel region. Preferably a narrow band gap layer is adjacent a gate insulator to provide maximum increase in mobility.
Inventors
- 👤 Joseph Dresner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 22:33
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6741; H10D30/6748; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D30/4732; H10D62/00; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D62/8162; H10D62/8163
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
51 words
A transistor comprising: spaced source and drain regions with a channel region therebetween; said channel region comprising a gate electrode, and a superlattice spaced apart by a gate insulator, said superlattice having a plurality of undoped interleaved wide and narrow bandgap layers, said layers extending between the source and drain regions.
Claim 2
Dependent Claim
51 words
A transistor comprising: spaced source and drain regions with a channel region therebetween; said channel region comprising a gate electrode, and a superlattice spaced apart by a gate insulator, said superlattice having a plurality of undoped interleaved wide and narrow bandgap layers, said layers extending between the source and drain regions.
Claim 3
Dependent Claim
19 words
The transistor of claim 1, wherein the superlattice comprises a narrow band gap layer disposed adjacent said gate insulator.
Claim 4
Dependent Claim
40 words
The transistor of claim 1, wherein said gate electrode is disposed on one side of said supperlattice, and said source and drain regions each include an electrode disposed adjacent the opposite side of said superlattice remote from said gate electrode.
Claim 5
Dependent Claim
18 words
The transistor of claim 3, wherein said source and drain regions each include electrodes disposed on a substrate.
Claim 6
Dependent Claim
14 words
The transistor of claim 3, wherein said gate electrode is disposed on a substrate.
Claim 7
Dependent Claim
21 words
The transistor of claim 1, wherein said narrow band gap layers each have a thickness between about 3 and 15 nanometers.
Claim 8
Dependent Claim
19 words
The transistor of claim 6, wherein said narrow bandgap layers have a thickness no greater than about 6 nanometers.
Claim 9
Dependent Claim
17 words
The transistor of claim 7, wherein said wide bandgap layers have a thickness of about 10 nanometers.
Claim 10
Dependent Claim
22 words
The transistor of claim 8, wherein said wide and narrow bandgap layers have a bandgap difference of at least 100 millielectron-volts therebetween.
Claim 11
Dependent Claim
29 words
The transistor of claim 1, wherein said narrow bandgap layers each comprise an amorphous material selected from the group consisting of silicon, hydrogenated silicon, and a hydrogenated silicon-germanium alloys.
Claim 12
Dependent Claim
28 words
The transistor of claim 10, wherein said wide bandgap layers each comprise an amorphous hydrogenated material selected from the group consisting of a silicon-carbon and a silicon-nitrogen alloys.
Claim 13
Dependent Claim
22 words
The transistor of claim 11, wherein said wide and narrow bandgap layers have a bandgap difference of at least 100 millielectron-volts therebetween.
Claim 14
Dependent Claim
17 words
The transistor of claim 1, wherein said wide bandgap layers have a thickness of about 10 nanometers.
Claim 15
Dependent Claim
27 words
The transistor of claim 1, wherein said wide bandgap layers comprise an amorphous hydrogenated material selected from the group consisting of a silicon-carbon and a silicon-nitrogen alloys.
Claim 16
Dependent Claim
17 words
The transistor of claim 1, wherein said superlattice has a thickness between about 50 and 250 nanometers.
Claim 17
Dependent Claim
21 words
The transistor of claim 1, wherein said superlattice comprises between about 5 and 30 pairs of narrow and wide bandgap layers.
Claim 18
Dependent Claim
19 words
The transistor of claim 1, wherein said narrow bandgap layers have a thickness no greater than about 6 nanometers.
Claim 19
Dependent Claim
22 words
The transistor of claim 1, wherein said wide and narrow bandgap layers have a bandgap difference of at least 100 millielectron-volts therebetween.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1990-09-28 | 1991-03-30 | 1991-09-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-09-28 | 1995-03-30 | 1995-09-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-09-28 | 1999-03-30 | 1999-09-29 | $7700.00 | Window Closed / Lapsed |