US4823171A
Expired / Lapsed
US
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Compound semiconductor device
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1987-03-31
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Granted: 1989-04-18
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Expires: 2007-03-31
Abstract
Abstract A compound semiconductor device having a channel layer which is fabricated by alternately laminating an In x Ga 1-x As compound semiconductor layer (0.7≦x≦1.0) with thickness of 16 atomic planes or less, and an In y Ga 1-y As compound semiconductor layer (0≦y≦0.3) with thickness of 14 atomic planes or less, so that the thickness of the former is greater than that of the latter, in which n-type impurities are doped only in the In y Ga 1-y As layer (0≦y≦0.3) side, and a ratio In/Ga on the whole is set at 1.1 or higher.
Inventors
- 👤 Yuichi Matsui
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 22:08
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D30/4732; H10D62/00; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D62/8162; H10D62/8164
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
115 words
A compound semiconductor device having a channel layer, said channel layer having an increased probability of existence of electrons in a In x Ga 1 -x As layer (0.7≦x≦1.0) of said channel layer, said device having alternate laminations of In x Ga 1-x As semiconductor layers (0.7≦x≦1.0) with thicknesses of 16 atomic planes or less and In y Ga 1-y As layers (0≦y≦0.3) with thicknesses of 14 atomic planes or less so that the thickness of the In x Ga 1-x As (0.7≦x≦1.0) is greater than that of the thickness of the In ny Ga 1-y As layer (0≦y≦0.3), and wherein n-type impurities are doped only in the In y Ga 1-y As layer (0≦y≦0.3).
Claim 2
Dependent Claim
115 words
A compound semiconductor device having a channel layer, said channel layer having an increased probability of existence of electrons in a In x Ga 1 -x As layer (0.7≦x≦1.0) of said channel layer, said device having alternate laminations of In x Ga 1-x As semiconductor layers (0.7≦x≦1.0) with thicknesses of 16 atomic planes or less and In y Ga 1-y As layers (0≦y≦0.3) with thicknesses of 14 atomic planes or less so that the thickness of the In x Ga 1-x As (0.7≦x≦1.0) is greater than that of the thickness of the In ny Ga 1-y As layer (0≦y≦0.3), and wherein n-type impurities are doped only in the In y Ga 1-y As layer (0≦y≦0.3).
Claim 3
Dependent Claim
24 words
A compound semiconductor device as set forth in claim 1, wherein a ratio of In/Ga in the entire channel layer is 1.1 or more.
Claim 4
Dependent Claim
21 words
A compound semiconductor device as set forth in claim 1, wherein the channel layer is formed on a semi-insulating GaAs substrate.
Claim 5
Dependent Claim
21 words
A compound semiconductor device as set forth in claim 1, wherein the channel layer is formed on a semi-insulating InP substrate.
Claim 6
Dependent Claim
36 words
A compound semiconductor device as set forth in claim 1, wherein a lowermost layer of the channel layer is said In y Ga 1-y As layer (0≦y≦0.3) with a thickness of 14 atomic planes or less.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-04-17 | 1992-10-17 | 1993-04-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-04-17 | 1996-10-17 | 1997-04-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-04-17 | 2000-10-17 | 2001-04-18 | $7700.00 | Window Closed / Lapsed |