US5285087A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Heterojunction field effect transistor
Assignee: Mitsubishi Electric Corp
•
Filing: 1991-06-21
•
Granted: 1994-02-08
•
Expires: 2011-06-21
Abstract
Abstract A heterojunction field effect transistor includes a semi-insulating crystalline layer, a pseudomorphic channel layer disposed on the semi-insulating crystalline layer, and an electron supply layer disposed on said pseudomorphic layer. The channel layer has a lattice constant equal to or close to that of the semi-insulating crystalline layer adjacent to semi-insulating crystalline layer and different from the semi-insulating crystalline layer adjacent to the electron supply layer.
Inventors
- 👤 Koichi Narita
- 👤 Kazuo Hayashi
- 👤 Takuji Sonoda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:50
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D30/4732
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
132 words
A heterojunction field effect transistor comprising: a semi-insulating indium phosphide crystalline layer; a pseudomorphic channel layer having a bandgap energy and disposed on said semi-insulating crystalline layer; an AlInAs buffer layer disposed between and contacting said semi-insulating indium phosphide layer and said pseudomorphic channel layer; an electron supply layer; and a spacer layer of AlInAs interposed between and contacting said pseudomorphic channel layer and said electron supply layer, said pseudomorphic channel layer being In w Ga 1-w As adjacent to said electron supply layer, where w is within a range of 0.50 to 0.70, the band gap energy of said pseudomorphic channel layer increasing to a maximum adjacent to said semi-insulating crystalline layer, and said pseudomorphic channel layer being In 0 .47 Ga 0 .53 As adjacent to said semi-insulating crystalline layer.
Claim 2
Dependent Claim
132 words
A heterojunction field effect transistor comprising: a semi-insulating indium phosphide crystalline layer; a pseudomorphic channel layer having a bandgap energy and disposed on said semi-insulating crystalline layer; an AlInAs buffer layer disposed between and contacting said semi-insulating indium phosphide layer and said pseudomorphic channel layer; an electron supply layer; and a spacer layer of AlInAs interposed between and contacting said pseudomorphic channel layer and said electron supply layer, said pseudomorphic channel layer being In w Ga 1-w As adjacent to said electron supply layer, where w is within a range of 0.50 to 0.70, the band gap energy of said pseudomorphic channel layer increasing to a maximum adjacent to said semi-insulating crystalline layer, and said pseudomorphic channel layer being In 0 .47 Ga 0 .53 As adjacent to said semi-insulating crystalline layer.
References Cited (Backward Citations)
US4739385A
Cited
US4764796A
Cited
US4823171A
Cited
US4894691A
Cited
US4827320A
Cited
JPS63102270A
Cited
JPS63116471A
Cited
JPS63143871A
Cited
JPH01108779A
Cited
US4967242A
Cited
JPH01225173A
Cited
JPH0239542A
Cited
US5099295A
Cited
US5049951A
Cited
US5124762A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-02-07 | 1997-08-09 | 1998-02-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-02-07 | 2001-08-09 | 2002-02-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-02-07 | 2005-08-09 | 2006-02-08 | $7700.00 | Window Closed / Lapsed |