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US5274251A
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Semiconductor light emitting element
Assignee: Pioneer Corp
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Filing: 1991-07-03
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Granted: 1993-12-28
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Expires: 2011-07-03
Abstract
Abstract A semiconductor light emitting element with a high light-emitting efficiency, which is constituted in such a way that, of the composition of its GaN and AlN epitaxial layer, part of N is substituted by P, thus ensuring good lattice-matching with the substrate crystal, ZnO.
Inventors
- 👤 Hiroyuki Ota
- 👤 Atsushi Watanabe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 08:23
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32341; H01S5/02; H01S5/0206; H01S5/0218
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
66 words
A semiconductor light emitting element compromising: a substrate crystal; and a semiconductor mixed crystal consisting of multiple compounds belonging to the III-V group, formed as an epitaxial layer on the substrate crystal, the substrate crystal being ZnO and the epitaxial layer having a composition of Al x Ga 1-x N 1-y P y (0≦x≦1, 0<y<1) wherein the semiconductor mixed crystal is lattice-matched with the substrate crystal.
Claim 2
Dependent Claim
66 words
A semiconductor light emitting element compromising: a substrate crystal; and a semiconductor mixed crystal consisting of multiple compounds belonging to the III-V group, formed as an epitaxial layer on the substrate crystal, the substrate crystal being ZnO and the epitaxial layer having a composition of Al x Ga 1-x N 1-y P y (0≦x≦1, 0<y<1) wherein the semiconductor mixed crystal is lattice-matched with the substrate crystal.
Claim 3
Dependent Claim
93 words
A semiconductor light emitting element according to claim 1, wherein said epitaxial layer is made of n-type Al x Ga 1-x N 1-y P y (0≦x≦1, 0<y<1) as a first clad layer, and said semiconductor light emitting element further comprises an active layer made of a mixed crystal of n-conductivity type or p-conductivity type Al x Ga 1-x N 1-y P y (0≦x≦1, 0<y<1) formed on said first clad layer and a second clad layer made of p-type Al x Ga 1-x N 1-y P y (0≦x≦1, 0<y<1) formed on said active layer.
Claim 4
Dependent Claim
28 words
A semiconductor light emitting element according to claim 2, wherein said first and second clad layers have band-gaps respectively larger by 0.3eV than that of the active layer.
Claim 5
Dependent Claim
68 words
A semiconductor light emitting element comprising a substrate crystal; and a semiconductor mixed crystal consisting of multiple compounds belonging to the III-V group, formed as an epitaxial layer on the substrate crystal, the substrate crystal being ZnO and the epitaxial layer having a composition of Al x Ga 1-x N 1-y P y where 0≦x≦1 and 0.09<y<0.18, whereby the semiconductor mixed crystal is lattice-matched with the substrate crystal.
Claim 6
Dependent Claim
68 words
A semiconductor light emitting element comprising a substrate crystal; and a semiconductor mixed crystal consisting of multiple compounds belonging to the III-V group, formed as an epitaxial layer on the substrate crystal, the substrate crystal being ZnO and the epitaxial layer having a composition of Al x Ga 1-x N 1-y P y where 0≦x≦1 and 0.09<y<0.18, whereby the semiconductor mixed crystal is lattice-matched with the substrate crystal.
Claim 7
Dependent Claim
93 words
A semiconductor light emitting element according to claim 3, wherein said epitaxial layer on said substrate crystal made of n-conductivity type Al 0 .12 Ga 0 .88 N 0 .90 P 0 .10 as a first clad layer, and said semiconductor light emitting element further comprises an active layer made of a mixed crystal of GaN 0 .91 P 0 .09 formed on said first clad layer and a second clad layer made of p-conductivity type Al 0 .12 Ga 0 .88 N 0 .90 P 0 .10 formed on said active layer.
Claim 8
Dependent Claim
28 words
A semiconductor light emitting element according to claim 5, wherein said first and second clad layers have band-gaps respectively larger by 0.3eV than that of the active layer.
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