EP0395392A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor laser using five-element compound semiconductor
Assignee: Toshiba Corp
•
Filing: 1990-04-25
•
Granted: —
•
Expires: 2010-04-25
Abstract
Abstract A green light-emitting semiconductor laser using a superlattice layer wherein BP layers and Ga x Aℓ 1-x N (0 ≦ x ≦ 1) layers are alternately stacked and each of the Ga x Aℓ 1-x N (0 ≦ x ≦ 1) layers has a zinc blende type crystal structure, or a Ga x Aℓ y B 1-x-y N z P 1-z (0 ≦ x, y, z ≦ 1) mixed crystal layers with a zinc blende type structure a first clad layer (14) of a first conductivity type, an active layer (15), and a second clad layer (16) of a second conductivity type, together constituting a double heterojunction.
Inventors
- 👤 Ako C/O Intellectual Property Division Hatano
- 👤 Toshihide C/O Intellectual Property Div. Izumiya
- 👤 Yasuo C/O Intellectual Property Division Ohba
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 12:09
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; B; B82; B82Y; B82Y20/00; H01S5/30; H01S5/32; H01S5/34; H01S5/343; H01S2302/00; H01S5/3201; H01S5/321; H01S5/3211; H01S5/3216; H01S5/323; H01S5/32308; H01S5/32341; H01S5/34333
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
124 words
A semiconductor laser comprising: a substrate (11); a first clad layer (14), of a first conductivity type, formed on said substrate (11) directly or via a buffer layer (12, 13); an active layer (15) formed on said first clad layer (14); and a second clad layer (16), of a second conductivity type, formed on said active layer (15), characterized in that each of said first clad layer (14), said active layer (15), and said second clad layer (16) is constituted by a superlattice layer wherein BP layers and Ga x Aℓ 1-x N/BP (0 ≦ x ≦ 1) layers are alternately stacked and each of said Ga x Aℓ 1-x N (0 ≦ x ≦ 1) layers has a zinc blende type crystal structure.
Claim 2
Dependent Claim
124 words
A semiconductor laser comprising: a substrate (11); a first clad layer (14), of a first conductivity type, formed on said substrate (11) directly or via a buffer layer (12, 13); an active layer (15) formed on said first clad layer (14); and a second clad layer (16), of a second conductivity type, formed on said active layer (15), characterized in that each of said first clad layer (14), said active layer (15), and said second clad layer (16) is constituted by a superlattice layer wherein BP layers and Ga x Aℓ 1-x N/BP (0 ≦ x ≦ 1) layers are alternately stacked and each of said Ga x Aℓ 1-x N (0 ≦ x ≦ 1) layers has a zinc blende type crystal structure.
Claim 3
Dependent Claim
93 words
A laser according to claim 1, characterized in that the composition of each of said Ga x Aℓ 1-x N (0 ≦ x ≦ 1) layers constituting said superlattice or the film thickness ratio of said Ga x Aℓ 1-x N (0 ≦ x ≦ 1) layer to said BP layer of said active layer (15) is set to be different from those of said first and second clad layers (14, 16), and said active layer (15) has a narrower band gap than that of said first and second clad layers (14, 16).
Claim 4
Dependent Claim
62 words
A laser according to claim 1, characterized in that a current blocking layer (17) of the first conductivity type, consisting of a Ga u Aℓ 1-u N (0 ≦ u ≦ 1) layer or a BP layer, is selectively formed on said second clad layer (16) or formed on a region from which said second clad layer (16) has been partially removed.
Claim 5
Dependent Claim
91 words
A laser according to claim 1, characterized in that a current blocking layer (17) of the first conductivity type, consisting of a Ga u Aℓ 1-u N (0 ≦ u ≦ 1) layer or a BP layer, is selectively formed on said second clad layer (16) or formed on a region from which said second clad layer (16) has been partially removed, and a contact layer (18) of the second conductivity type, consisting of a BP layer, is formed on said current blocking layer (17) and said second clad layer (16).
Claim 6
Dependent Claim
58 words
A laser according to claim 4, characterized by further comprising an intermediate buffer layer (101, 102, 111 or 112), formed at least under said first clad layer (14) or on said second clad layer (16), for smoothly changing a band gap of a region between the active layer (15) and the first or second clad layer (14, 16).
Claim 7
Dependent Claim
97 words
A laser according to claim 5, characterized in that said intermediate buffer layer (101, 102) is constituted by a superlattice layer wherein BP layers and Ga x Aℓ 1-x N (0 ≦ x ≦ 1) layers are alternately stacked and each of said Ga x Aℓ 1-x N (0 ≦ x ≦ 1) layers has a zinc blende type crystal structure, and the composition of each of said Ga x Aℓ 1-x N layers or the film thickness ratio of said Ga x Aℓ 1-x N layers to said BP layer changes in a film thickness direction.
Claim 8
Dependent Claim
54 words
A laser according to claim 5, characterized in that said intermediate buffer layer (111, 112) consists of a multilayered structure of Ga x Aℓ y B 1-x-y N z P 1-z (0 ≦ x, y, z ≦ 1), and the average composition of said intermediate buffer layer continuously changes in a film thickness direction.
Claim 9
Dependent Claim
108 words
semiconductor laser comprising: a substrate (11); a first clad layer (41), of a first conductivity type, formed on said substrate (11) directly or via a buffer layer (12, 13); an active layer (42) formed on said first clad layer (41), and a second clad layer (43), of a second conductivity type, formed on said active layer (42), characterized in that each of said first clad layer (41), said active layer (42), and said second clad layer (43) is constituted by a Ga x Aℓ y B 1-x-y N z P 1-z (0 ≦ x, y, z ≦ 1) mixed crystal layer having a zinc blende type crystal structure.
Claim 10
Dependent Claim
108 words
semiconductor laser comprising: a substrate (11); a first clad layer (41), of a first conductivity type, formed on said substrate (11) directly or via a buffer layer (12, 13); an active layer (42) formed on said first clad layer (41), and a second clad layer (43), of a second conductivity type, formed on said active layer (42), characterized in that each of said first clad layer (41), said active layer (42), and said second clad layer (43) is constituted by a Ga x Aℓ y B 1-x-y N z P 1-z (0 ≦ x, y, z ≦ 1) mixed crystal layer having a zinc blende type crystal structure.
Claim 11
Dependent Claim
73 words
A laser according to claim 8, characterized in that the average composition of said Ga x Aℓ y B 1-x-y N z P 1-z (0 ≦ x, y, z ≦ 1) of said active layer (42) is set to be different from that of said first and second clad layers (41, 43), and said active layer (42) has a narrower band gap than that of said first and second clad layers (41, 43).
Claim 12
Dependent Claim
62 words
A laser according to claim 8, characterized in that a current blocking layer (17) of the first conductivity type, consisting of a Ga u Aℓ 1-u N (0 ≦ u ≦ 1) layer or a BP layer, is selectively formed on said second clad layer (43) or formed on a region from which said second clad layer (43) has been partially removed.
Claim 13
Dependent Claim
91 words
A laser according to claim 8, characterized in that a current blocking layer (17) of the first conductivity type, consisting of a Ga x Aℓ 1-x N (0 ≦ u ≦ 1) layer or a BP layer, is selectively formed on said second clad layer (43) or formed on a region from which said second clad layer (43) has been partially removed, and a contact layer (18) of the second conductivity type, consisting of a BP layer, is formed on said current blocking layer (17) and said second clad layer (43).
Claim 14
Dependent Claim
58 words
A laser according to claim 11, characterized by further comprising an intermediate buffer layer (101, 102, 111 or 112), formed at least under said first clad layer (41) or on said second clad layer (43), for smoothly changing a band gap of a region between the active layer (42) and the first or second clad layer (41, 43).
Claim 15
Dependent Claim
96 words
A laser according to claim 12, characterized in that said intermediate layer (101, 102) is constituted by a superlattice layer wherein BP layers and Ga x Aℓ 1-x N (0 ≦ x ≦ 1) layers are alternately stacked and each of said Ga x Aℓ 1-x N (0 ≦ x ≦ 1) layers has a zinc blende type crystal structure, and the composition of each of said Ga x Aℓ 1-x N layers or the film thickness ratio of said Ga x Aℓ 1-x N layers to said BP layer changes in a film thickness direction.
Claim 16
Dependent Claim
64 words
A laser according to claim 12, characterized in that said intermediate buffer layer (111, 112) consists of a single-layered or a multilayered structure of Ga x Aℓ y B 1-x-y N z P 1-z (0 ≦ x, y, z ≦ 1), and the average composition of said intermediate buffer layer (111, 112), consisting of the multilayered structure, continuously changes in a film thickness direction.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.