Patent JPS471268U successfully refreshed from Google Patents.
US5041883A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Light emitting diodes with nitrogen doping
Assignee: HP Inc
•
Filing: 1990-09-28
•
Granted: 1991-08-20
•
Expires: 2010-09-28
Abstract
Abstract A direct band gap semiconductor compound, GaAs 1-x P x , where x is less than 0.45, is doped with nitrogen for forming an array of light emitting diodes. Preferably, the light emitting junctions of the LEDs are substantially free of nitrogen, but the underlying epitaxially grown semiconductor compound is nitrogen doped. The nitrogen doping is believed to immobilize dislocations for enhancing uniformity of light output power, reducing degradation and increasing uniformity of degradation during use of the LEDs. The proportion of LED arrays rejected for nonuniformity was reduced from 40 percent to less than 8 percent by nitrogen doping the direct band gap material.
Inventors
- 👤 Peter F. Lindquist
- 👤 Michael J. Peanasky
- 👤 Jacob C. L. Tarn
- 👤 Chin W. Tu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 11:33
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/8242; H10H29/00; H10H29/10; H10H29/14
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
69 words
A light emitting diode comprising: a substrate; a layer of epitaxially grown direct band gap GaAs.sub.(1-x) P x of one conductivity type above the substrate, wherein x is less than 0.45; and a doped layer of the opposite conductivity type forming a light emitting junction in the epitaxially grown layer; and wherein at least a portion of the epitaxial layer of direct band gap material is doped with nitrogen.
Claim 2
Dependent Claim
69 words
A light emitting diode comprising: a substrate; a layer of epitaxially grown direct band gap GaAs.sub.(1-x) P x of one conductivity type above the substrate, wherein x is less than 0.45; and a doped layer of the opposite conductivity type forming a light emitting junction in the epitaxially grown layer; and wherein at least a portion of the epitaxial layer of direct band gap material is doped with nitrogen.
Claim 3
Dependent Claim
27 words
A light emitting diode as recited in claim 1 wherein the doped layer is a layer containing dopant diffused from the surface of the light emitting diode.
Claim 4
Dependent Claim
24 words
A light emitting diode as recited in claim 2 wherein the layer containing dopant diffused from the surface is substantially free to nitrogen doping.
Claim 5
Dependent Claim
27 words
A light emitting diode as recited in claim 3 wherein a portion of the epitaxial layer below the light emitting junction is substantially free of nitrogen doping.
Claim 6
Dependent Claim
25 words
A light emitting diode as recited in claim 1 wherein the epitaxial layer adjacent to the light emitting junction is substantially free of nitrogen doping.
Claim 7
Dependent Claim
27 words
A light emitting diode as recited in claim 1 wherein the nitrogen doping is in the range of from 10 16 to 10 18 atoms/cm 3 .
Claim 8
Dependent Claim
83 words
A light emitting diode array comprising: a substrate; a layer of epitaxially grown direct band gap GaAs.sub.(1-x) P x of one conductivity type above the substrate, wherein x is less than 0.45, at least a portion of the epitaxial layer being doped with nitrogen; and a plurality of doped layers of the opposite conductivity type diffused from the surface of the epitaxial layer and forming an array of light emitting junctions in at least a portion of the direct band gap epitaxial layer.
Claim 9
Dependent Claim
83 words
A light emitting diode array comprising: a substrate; a layer of epitaxially grown direct band gap GaAs.sub.(1-x) P x of one conductivity type above the substrate, wherein x is less than 0.45, at least a portion of the epitaxial layer being doped with nitrogen; and a plurality of doped layers of the opposite conductivity type diffused from the surface of the epitaxial layer and forming an array of light emitting junctions in at least a portion of the direct band gap epitaxial layer.
Claim 10
Dependent Claim
21 words
A light emitting diode array as recited in claim 7 wherein the light emitting junctions are substantially free of nitrogen doping.
Claim 11
Dependent Claim
28 words
A light emitting diode array as recited in claim 7 wherein the nitrogen doping is in the range of from 10 16 to 10 18 atoms/cm 3 .
Claim 12
Dependent Claim
86 words
A light emitting diode array comprising: a substrate; a layer of epitaxially grown direct band gap GaAs.sub.(1-x) P x of one conductivity type above the substrate, wherein x is less than 0.45; a plurality of doped layers of the opposite conductivity type diffused from the surface of the epitaxial layer and forming an array of light emitting junctions in an upper portion of the epitaxial layer; and nitrogen doping in a lower portion of the direct band gap epitaxial layer remote from the light emitting junctions.
Claim 13
Dependent Claim
86 words
A light emitting diode array comprising: a substrate; a layer of epitaxially grown direct band gap GaAs.sub.(1-x) P x of one conductivity type above the substrate, wherein x is less than 0.45; a plurality of doped layers of the opposite conductivity type diffused from the surface of the epitaxial layer and forming an array of light emitting junctions in an upper portion of the epitaxial layer; and nitrogen doping in a lower portion of the direct band gap epitaxial layer remote from the light emitting junctions.
Claim 14
Dependent Claim
21 words
A light emitting diode array as recited in claim 10 wherein the light emitting junctions are substantially free of nitrogen doping.
Claim 15
Dependent Claim
28 words
A light emitting diode array as recited in claim 11 wherein the nitrogen doping is in the range of from 10 6 to 10 18 atoms/cm 3 .
Claim 16
Dependent Claim
109 words
In a light emitting diode array comprising: a gallium arsenide substrate; an epitaxially grown constant composition direct band gap GaAs 1-x P x compound layer of one conductivity type, wherein x is less than 0.45; an epitaxially grown graded composition layer between the substrate and the constant composition layer having a gradually changing composition from gallium arsenide to GaAs.sub.(1-x) P x ; and a plurality of light emitting junctions adjacent a layer of the opposite conductivity type diffused into the constant composition layer remote from the substrate; the improvement comprising nitrogen doping in at least a portion of the graded layer and the direct band gap constant composition layer.
Claim 17
Dependent Claim
109 words
In a light emitting diode array comprising: a gallium arsenide substrate; an epitaxially grown constant composition direct band gap GaAs 1-x P x compound layer of one conductivity type, wherein x is less than 0.45; an epitaxially grown graded composition layer between the substrate and the constant composition layer having a gradually changing composition from gallium arsenide to GaAs.sub.(1-x) P x ; and a plurality of light emitting junctions adjacent a layer of the opposite conductivity type diffused into the constant composition layer remote from the substrate; the improvement comprising nitrogen doping in at least a portion of the graded layer and the direct band gap constant composition layer.
Claim 18
Dependent Claim
38 words
A light emitting diode array as recited in claim 13 wherein a portion of the constant composition layer remote from the light emitting junction is doped with nitrogen and the light emitting junction is substantially free of nitrogen.
Claim 19
Dependent Claim
27 words
A light emitting diode array as recited in claim 13 wherein the nitrogen is in the range of from 10 16 to 10 18 atoms/cm 3 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-08-19 | 1995-02-18 | 1995-08-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-08-19 | 1999-02-18 | 1999-08-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-08-19 | 2003-02-18 | 2003-08-20 | $7700.00 | Window Closed / Lapsed |