US4942439A
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US
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Light-emitting diode of GaAsP compound semiconductive material
Assignee: Telefunken Electronic GmbH
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Filing: 1988-06-29
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Granted: 1990-07-17
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Expires: 2008-06-29
Abstract
Abstract To improve the external quantum efficiency of light-emitting diodes made from semiconductive material of III/V compounds with lattice constants heavily dependent on the respective material composition of the mixed crystal, for example in GaAsP light-emitting diodes, a thin surface layer having an increased energy band gap in relation to the covered material is arranged on the surface layer of mixed crystal containing the p-zone and being from the same mixed-crystal system, through which layer the p-zone extends, with the transition in the lattice structure between the two surface layers being abrupt.
Inventors
- 👤 Werner Schairer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 16:21
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/01; H10H20/011; H10H20/013; H10H20/817; H10H20/819; H10H20/821
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
75 words
A light emitting diode, comprising: a semiconductor substrate; a GaAsP compound crystal system on said substrate, including: a first n-doped GaAsP surface layer having a first energy bandgap, on said substrate, and a second n-doped GaAsP surface layer having a second energy bandgap, directly on said first surface layer; and a p-type region extending through said second surface layer into said first surface layer, said second energy bandgap being greater than said first energy bandgap.
Claim 2
Dependent Claim
75 words
A light emitting diode, comprising: a semiconductor substrate; a GaAsP compound crystal system on said substrate, including: a first n-doped GaAsP surface layer having a first energy bandgap, on said substrate, and a second n-doped GaAsP surface layer having a second energy bandgap, directly on said first surface layer; and a p-type region extending through said second surface layer into said first surface layer, said second energy bandgap being greater than said first energy bandgap.
Claim 3
Dependent Claim
33 words
A light-emitting diode according to claim 1, wherein said first surface layer is of GaAs 1-x .sbsb.o P x .sbsb.o with constant x o over the entire thickness of said first surface layer.
Claim 4
Dependent Claim
32 words
A light-emitting diode according to claim 2, wherein the second surface layer comprises GaAs 1- (x.sbsb.o + .sbsb.Δ x )P.sub.(x.sbsb.o + .sbsb..DELTA. x ), with .sub.Δ x being between 0.04 and 0.2.
Claim 5
Dependent Claim
14 words
A light-emitting diode according to claim 3, wherein .sub.Δ x is equal to 0.08.
Claim 6
Dependent Claim
22 words
A light-emitting diode according to claim 3, wherein the thickness of the second surface layer is between 5 nm and 500 nm.
Claim 7
Dependent Claim
20 words
A light emitting diode according to claim 5, wherein the thickness of the second surface layer is 100 nm±50 nm.
Claim 8
Dependent Claim
45 words
A light-emitting diode according to claim 3, further comprising an n-conductive gradient layer of GaAs 1-x P x (x=0 to x o ) on said substrate, said substrate comprising an n-conductive substrate material of GaAs, said first surface layer being formed on said gradient layer.
Claim 9
Dependent Claim
45 words
A light-emitting diode according to claim 3, further comprising an n-conductive gradient layer of GaAs 1-x P x (x=1 to x o ) on said substrate, said substrate comprising an n-conductive substrate material of GaP, said first surface layer being formed on said gradient layer.
Claim 10
Dependent Claim
50 words
A light emitting diode as in claim 1, wherein said second surface layer is substantially thinner than said first surface layer, said second surface layer and said first surface layer defining an interface therebetween, said first and second surface layers having an abrupt transition in lattice structure at said interface.
Claim 11
Dependent Claim
27 words
A light emitting diode as in claim 9, wherein said second surface layer is sufficiently thin as to form a monocrystaline structure having no substantial misfit dislocation.
Claim 12
Dependent Claim
57 words
A light emitting diode as in claim 10, wherein said second surface layer comprises GaAs 1- (x.sbsb.o + Δx)P.sub.(x.sbsb.o + Δx) and said first surface layer comprises GaAs 1-x .sbsb.o P x .sbsb.o, where Δx is between 0.04 and 0.2, and x o is a constant over the respective thicknesses of the first and second surface layers.
Claim 13
Dependent Claim
27 words
A light emitting diode as in claim 1, wherein said second surface layer is sufficiently thin as to form a monocrystaline structure having no substantial misfit dislocation.
Claim 14
Dependent Claim
23 words
A light emitting diode as in claim 1, wherein the thickness of the second surface layer is between 5 nm and 500 nm.
Claim 15
Dependent Claim
21 words
A light emitting diode as in claim 13, wherein said second surface layer is substantially thinner than said first surface layer.
Claim 16
Dependent Claim
21 words
A light emitting diode as in claim 1, wherein said second surface layer is substantially thinner than said first surface layer.
References Cited (Backward Citations)
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