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EP0342656A2
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Method of manufacturing a compound semiconductor light emitting device
Assignee: Mitsubishi Chemical Corp
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Filing: 1989-05-17
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Granted: —
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Expires: 2009-05-17
Abstract
Abstract There is provided a short wavelength oscillating semiconductor light emitting device having a uniform and high light emitting intensity, which includes a monocrystalline thin film of a compound semiconductor expressed as the equation (Aℓ z Ga 1-z ) x In 1-x P (x is a number where lattice-matching on the GaAs substrate (103) can be realized, and where z is a number within a range from 0.08 to 0.25). This semiconductor light emitting device is manufactured by the metal organic chemical vapor deposition method. Namely, this light emitting device is provided by transporting the material gaseous phase mixture into a lateral type reactive tube (1) at a feed flow rate of less than 30 cm/sec and at a pressure within the tube of less than 60 torr, and growing the crystal film while rotating the substrate surface so inclined as to have an angle of 3 to 45° relative to the horizontal direction about the axis in a direction perpendicular thereto.
Inventors
- 👤 Kiyoshi Ichimura
- 👤 Akihito Tsushi
- 👤 Hideo Kawanishi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 15:37
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; C; C30; C30B; C30B25/00; C30B25/02; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32325
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
93 words
A semiconductor light emitting device including an active layer of a monocrystalline thin film comprised of a compound semiconductor expressed as the equation (Aℓ z Ga 1-z ) x In 1-x P (x is a number where lattice-matching on the GaAs substrate can be realized, and z is a number within a range from 0.08 to 0.25), and having an oscillating wavelength at least in the 606 nm band, said semiconductor light emitting device having a light emitting intensity substantially equivalent to that in the case of a compound semiconductor containing no Aℓ.
Claim 2
Dependent Claim
93 words
A semiconductor light emitting device including an active layer of a monocrystalline thin film comprised of a compound semiconductor expressed as the equation (Aℓ z Ga 1-z ) x In 1-x P (x is a number where lattice-matching on the GaAs substrate can be realized, and z is a number within a range from 0.08 to 0.25), and having an oscillating wavelength at least in the 606 nm band, said semiconductor light emitting device having a light emitting intensity substantially equivalent to that in the case of a compound semiconductor containing no Aℓ.
Claim 3
Dependent Claim
22 words
A light emitting device as set forth in claim 1, wherein x is a number within a range from 0.48 to 0.55.
Claim 4
Dependent Claim
24 words
A light emitting device as set forth in claim 1 or 2, wherein z is a number within a range from 0.18 to 0.25.
Claim 5
Dependent Claim
54 words
A light emitting device as set forth in any one of claims 1 to 3, which includes an active layer of said AℓGaInP compound semiconductor, and clad layers having said active layer put therebetween, said clad layer being composed of an (AℓGaInP) semiconductor having a band gap larger than that of said active layer.
Claim 6
Independent Claim
183 words
A method of forming an AℓGaInP compound semiconductor crystal film on a substrate to manufacture a compound semiconductor light emitting device, said method including the steps of transporting a material gaseous phase mixture consisting of organic metal compound including the group III device and hydride of phosphorous constituting said compound semiconductor into a lateral type reactive tube at a feed flow rate of less than 30 cm/sec and at a pressure within the pressure of less than 60 Torr, mounting a substrate for growing thereon a compound semiconductor crystal on a substrate table within said lateral type reactive tube so that said substrate surface has an angle of 3 to 45° relative to the horizontal direction to rotate said substrate table about an axis in a direction perpendicular to said substrate surface, and growing a monocrystalline thin film of a compound semiconductor expressed as the equation (Aℓ z Ga 1-z ) x In 1-x P (x is a number where lattice-matching on the GaAs substrate can be realized, and z is a number within a range from 0.08 to 0.25) on said substrate.
Claim 7
Independent Claim
183 words
A method of forming an AℓGaInP compound semiconductor crystal film on a substrate to manufacture a compound semiconductor light emitting device, said method including the steps of transporting a material gaseous phase mixture consisting of organic metal compound including the group III device and hydride of phosphorous constituting said compound semiconductor into a lateral type reactive tube at a feed flow rate of less than 30 cm/sec and at a pressure within the pressure of less than 60 Torr, mounting a substrate for growing thereon a compound semiconductor crystal on a substrate table within said lateral type reactive tube so that said substrate surface has an angle of 3 to 45° relative to the horizontal direction to rotate said substrate table about an axis in a direction perpendicular to said substrate surface, and growing a monocrystalline thin film of a compound semiconductor expressed as the equation (Aℓ z Ga 1-z ) x In 1-x P (x is a number where lattice-matching on the GaAs substrate can be realized, and z is a number within a range from 0.08 to 0.25) on said substrate.
Claim 8
Dependent Claim
41 words
A method of manufacturing a light emitting device as set forth in claim 5, wherein the pressure within said lateral type reactive tube at the time of growth of the compound semiconductor is within a range from 45 to 55 Torr.
Claim 9
Dependent Claim
41 words
A method of manufacturing a light emitting device as set forth in claim 5 or 6, wherein said feed flow rate of said material gaseous phase mixture at the time of growth of the compound semiconductor is 18 to 23 cm/sec.
Claim 10
Independent Claim
41 words
A method of manufacturing a light emitting device as set forth in any one of claims 5 to 7, wherein an angle defined by the flowing direction of said material gaseous phase mixture and said substrate surface is 3 to 10°.
References Cited (Backward Citations)
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