Method of manufacturing semiconductor device having interconnection layer contacting source/drain regions

Claim 1

A method of manufacturing a semiconductor device comprising the steps of: forming a gate electrode (7) having its upper portion covered with a first insulating film (5) on a surface of an active region of a first conductivity type of a semiconductor substrate (1), with a gate insulating film (3) formed therebetween; depositing an insulating film (9) on the entire surface of said semiconductor substrate (1), and anisotropically etching the same to form a pair of second insulating films (10) on left and right sides of said gate electrode (7); irradiating impurity ions of a second conductivity type to the entire surface of said semiconductor substrate (1) to form impurity diffused regions (8, 11) by using said gate electrode (7) only and/or by using both said gate electrode (7) and said second insulating films (10) as masks; after said second insulating films (10) are formed, selectively forming a first conductivity layer (12, 13) with its upper surface covered with an insulating film (22) extending at least from a prescribed position on the surface of said gate electrode (7) to a surface of one of said pair of second insulating films (10) and the surface of the impurity diffused regions (8, 11) adjacent thereto; after the first conductive layer (12, 13) is formed, depositing an insulating film (23) at least near a side end portion of said gate electrode (7) on which said first conductive layer (12, 13) is not formed, and anisotropically etching the same to form a third insulating film (24b) at least on the surface of one of said pair of said second insulating films (10) on which said first conductive layer (12, 13) is not formed; and after the third insulating film (24b) is formed, selectively forming a second conductive layer (18) at least on the surface of said third insulating film (24b) and on the surface of one of said impurity diffused regions (8, 11) on which said first conductive layer (12, 13) is not formed.

Claim 2

A method of manufacturing a semiconductor device comprising the steps of: forming a gate electrode (7) having its upper portion covered with a first insulating film (5) on a surface of an active region of a first conductivity type of a semiconductor substrate (1), with a gate insulating film (3) formed therebetween; depositing an insulating film (9) on the entire surface of said semiconductor substrate (1), and anisotropically etching the same to form a pair of second insulating films (10) on left and right sides of said gate electrode (7); irradiating impurity ions of a second conductivity type to the entire surface of said semiconductor substrate (1) to form impurity diffused regions (8, 11) by using said gate electrode (7) only and/or by using both said gate electrode (7) and said second insulating films (10) as masks; after said second insulating films (10) are formed, selectively forming a first conductivity layer (12, 13) with its upper surface covered with an insulating film (22) extending at least from a prescribed position on the surface of said gate electrode (7) to a surface of one of said pair of second insulating films (10) and the surface of the impurity diffused regions (8, 11) adjacent thereto; after the first conductive layer (12, 13) is formed, depositing an insulating film (23) at least near a side end portion of said gate electrode (7) on which said first conductive layer (12, 13) is not formed, and anisotropically etching the same to form a third insulating film (24b) at least on the surface of one of said pair of said second insulating films (10) on which said first conductive layer (12, 13) is not formed; and after the third insulating film (24b) is formed, selectively forming a second conductive layer (18) at least on the surface of said third insulating film (24b) and on the surface of one of said impurity diffused regions (8, 11) on which said first conductive layer (12, 13) is not formed.