US4587718A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for forming TiSi2 layers of differing thicknesses in a single integrated circuit
Assignee: Texas Instruments Inc
•
Filing: 1984-11-30
•
Granted: 1986-05-13
•
Expires: 2004-11-30
Abstract
Abstract Using a process in accordance with the teachings of this invention, an integrated circuit may be fabricated providing refractory metal silicide layers, such as TiSi 2 , of differing thicknesses to provide optimal reductions in the sheet resistances of the regions in which refractory metal silicide layers are formed. In one embodiment of the present invention a field effect transistor having a polycrystalline silicon gate is fabricated to provide a gate having optimally minimized sheet resistance and source and drain regions having TiSi 2 layers of the appropriate thickness to avoid punch-through leakage problems.
Inventors
- 👤 Roger A. Haken
- 👤 Michael E. Alperin
- 👤 Chi K. Lau
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 10:37
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D62/00; H10D62/80; H10D62/83; H10D62/834; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/0131; H10D64/021; H10D64/60; H10D64/62; H10D64/66; H10D64/661; H10D64/662; H10D64/663; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/066
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
312 words
A process for forming refractory metal silicide layers in two regions of an integrated circuit, wherein the thickness of the layer of refractory metal silicide in a first region is different from the thickness of the refractory metal silicide layer in a second region, comprising the step of: forming a first layer of silicon dioxide on said first region; forming said second region on said first region of silicon dioxide; forming a layer of silicon nitride on said second region; patterning said second region and said layer of silicon nitride to the same pattern, thus providing a patterned second region having a layer of silicon nitride on the surface thereof; forming a second layer of silicon dioxide on the exposed sidewalls of said patterned second region; increasing the thickness of the portions of said first layer of silicon dioxide which are not covered by said patterned second layer; removing said patterned layer of silicon nitride; forming a first layer of refractory metal on said integrated circuit; baking said integrated circuit thus causing said layer of refractory metal to react with the surface of said patterned second region to form refractory metal silicide; removing the unreacted portion of said layer of refractory metal; removing a portion of said first layer of silicon dioxide so that silicon dioxide remains on the sidewalls of said patterned second region and on those areas of said first region which will not receive a layer of refractory metal silicide; forming a second layer of refractory metal on said integrated circuit; baking said integrated circuit thus causing said second layer of refractory metal to react with the areas of said first region and said second region areas not covered by the remaining portion of said third layer of silicon dioxide and said first layer of silicon dioxide; and removing the unreacted portion of said second layer of refractory metal.
Claim 2
Dependent Claim
312 words
A process for forming refractory metal silicide layers in two regions of an integrated circuit, wherein the thickness of the layer of refractory metal silicide in a first region is different from the thickness of the refractory metal silicide layer in a second region, comprising the step of: forming a first layer of silicon dioxide on said first region; forming said second region on said first region of silicon dioxide; forming a layer of silicon nitride on said second region; patterning said second region and said layer of silicon nitride to the same pattern, thus providing a patterned second region having a layer of silicon nitride on the surface thereof; forming a second layer of silicon dioxide on the exposed sidewalls of said patterned second region; increasing the thickness of the portions of said first layer of silicon dioxide which are not covered by said patterned second layer; removing said patterned layer of silicon nitride; forming a first layer of refractory metal on said integrated circuit; baking said integrated circuit thus causing said layer of refractory metal to react with the surface of said patterned second region to form refractory metal silicide; removing the unreacted portion of said layer of refractory metal; removing a portion of said first layer of silicon dioxide so that silicon dioxide remains on the sidewalls of said patterned second region and on those areas of said first region which will not receive a layer of refractory metal silicide; forming a second layer of refractory metal on said integrated circuit; baking said integrated circuit thus causing said second layer of refractory metal to react with the areas of said first region and said second region areas not covered by the remaining portion of said third layer of silicon dioxide and said first layer of silicon dioxide; and removing the unreacted portion of said second layer of refractory metal.
Claim 3
Dependent Claim
12 words
A process as in claim 1, wherein said refractory metal is titanium.
Claim 4
Dependent Claim
18 words
A process as in claim 1, wherein said second layer of silicon dioxide is formed by thermal oxidation.
Claim 5
Dependent Claim
17 words
A process as in claim 1, wherein said first layer of refractory metal is deposited by sputtering.
Claim 6
Dependent Claim
17 words
A process as in claim 1, wherein said second layer of refractory metal is deposited by sputtering.
Claim 7
Dependent Claim
330 words
A process for forming refractory metal silicide layers in both the polycrystalline silicon layer and the substrate of an integrated circuit, wherein the thickness of the layer of refractory metal silicide in said polycrystalline silicon layer is different from the thickness of the refractory metal silicide layer in said substrate, comprising the steps of: forming a first layer of silicon dioxide on said substrate; forming a layer of polycrystalline silicon on said first layer of silicon dioxide; forming a layer of silicon nitride on said layer of polycrystalline silicon; patterning said layer of polycrystalline silicon and said layer of silicon nitride to the same pattern, thus providing a patterned layer of polycrystalline silicon havng a layer of silicon nitride on the surface thereof; forming a second layer of silicon dioxide on the exposed sidewalls of said patterned layer of polycrystalline silicon; increasing the thickness of the portions of said first layer of silicon dioxide which are not covered by said patterned polycrystalline silicon layer; removing said patterned layer of silicon nitride; forming a first layer of refractory metal on said integrated circuit; baking said integrated circuit thus causing said layer of refractory metal to react with the surface of said patterned layer of polycrystalline silicon to form refractory metal silicide; removing the unreacted portion of said layer of refractory metal; removing a portion of said first layer of silicon dioxide so that silicon dioxide remains on the sidewalls if said patterned polycrystalline silicon layer and on those areas of said integrated circuit which will not receive a layer of refractory metal silicide; forming a second layer of refractory metal on said integrated circuit; baking said integrated circuit thus causing said second layer of refractory metal to react with the areas of said substrate and said polycrystalline silicon areas not covered by the remaining portion of said third layer of silicon dioxide and said first layer of silicon dioxide; and removing the unreacted portion of said second layer of refractory metal.
Claim 8
Dependent Claim
330 words
A process for forming refractory metal silicide layers in both the polycrystalline silicon layer and the substrate of an integrated circuit, wherein the thickness of the layer of refractory metal silicide in said polycrystalline silicon layer is different from the thickness of the refractory metal silicide layer in said substrate, comprising the steps of: forming a first layer of silicon dioxide on said substrate; forming a layer of polycrystalline silicon on said first layer of silicon dioxide; forming a layer of silicon nitride on said layer of polycrystalline silicon; patterning said layer of polycrystalline silicon and said layer of silicon nitride to the same pattern, thus providing a patterned layer of polycrystalline silicon havng a layer of silicon nitride on the surface thereof; forming a second layer of silicon dioxide on the exposed sidewalls of said patterned layer of polycrystalline silicon; increasing the thickness of the portions of said first layer of silicon dioxide which are not covered by said patterned polycrystalline silicon layer; removing said patterned layer of silicon nitride; forming a first layer of refractory metal on said integrated circuit; baking said integrated circuit thus causing said layer of refractory metal to react with the surface of said patterned layer of polycrystalline silicon to form refractory metal silicide; removing the unreacted portion of said layer of refractory metal; removing a portion of said first layer of silicon dioxide so that silicon dioxide remains on the sidewalls if said patterned polycrystalline silicon layer and on those areas of said integrated circuit which will not receive a layer of refractory metal silicide; forming a second layer of refractory metal on said integrated circuit; baking said integrated circuit thus causing said second layer of refractory metal to react with the areas of said substrate and said polycrystalline silicon areas not covered by the remaining portion of said third layer of silicon dioxide and said first layer of silicon dioxide; and removing the unreacted portion of said second layer of refractory metal.
Claim 9
Dependent Claim
12 words
A process as in claim 6, wherein said refractory metal is titanium.
Claim 10
Dependent Claim
18 words
A process as in claim 6, wherein said second layer of silicon dioxide is formed by thermal oxidation.
Claim 11
Dependent Claim
17 words
A process as in clam 6, wherein said first layer of refractory metal is deposited by sputtering.
Claim 12
Dependent Claim
17 words
A process as in clam 6, wherein said first layer of refractory metal is deposited by sputtering.
Claim 13
Dependent Claim
17 words
A process as in claim 6, wherein said second layer of refractory metal is deposited by sputtering.
Claim 14
Dependent Claim
325 words
A process for forming refractory metal silicide layers in both the polycrystalline silicon layer and the substrate of an integrated circuit, wherein the thickness of the layer of refractory metal silicide in said polycrystalline silicon layer is different from the thickness of the refractory metal silicide layer in said substrate, comprising the steps of: forming a first layer of silicon dioxide on said substrate; forming a layer of polycrystalline silicon on said first layer of silicon dioxide; forming a layer of silicon nitride on said layer of polycrystalline silicon; patterning said layer of polycrystalline silicon and said layer of silicon nitride to the same pattern, thus providing a patterned layer of polycrystalline silicon having a layer of silicon nitride on the surface thereof; forming a second layer of silicon dioxide on the exposed sidewalls of said patterned layer of polycrystalline silicone; removing said patterned layer of silicon nitride; forming a first layer of refractory metal on said integrated circuit; baking said integrated circuit thus causing said layer of refractory metal to react with the surface of said patterned layer of polycrystalline silicon to form refractory metal silicide; removing the unreacted portion of said layer of refractory metal; forming a third layer of silicon dioxide on said integrated circuit; removing a portion of said third layer of silicon dioxide and said first layer of silicon dioxide so that silicon dioxide remains on the sidewalls of said patterned polycrystalline silicon layer and on those areas of said integrated circuit which will not receive a layer of refractory metal silicide; forming a second layer of refractory metal on said integrated circuit; baking said integrated circuit thus causing said second layer of refractory metal to react with the areas of said substrate and said polycrystalline silicon areas not covered by the remaining portion of said third layer of silicon dioxide and said first layer of silicon dioxide; and removing the unreacted portion of said second layer of refractory metal.
Claim 15
Dependent Claim
325 words
A process for forming refractory metal silicide layers in both the polycrystalline silicon layer and the substrate of an integrated circuit, wherein the thickness of the layer of refractory metal silicide in said polycrystalline silicon layer is different from the thickness of the refractory metal silicide layer in said substrate, comprising the steps of: forming a first layer of silicon dioxide on said substrate; forming a layer of polycrystalline silicon on said first layer of silicon dioxide; forming a layer of silicon nitride on said layer of polycrystalline silicon; patterning said layer of polycrystalline silicon and said layer of silicon nitride to the same pattern, thus providing a patterned layer of polycrystalline silicon having a layer of silicon nitride on the surface thereof; forming a second layer of silicon dioxide on the exposed sidewalls of said patterned layer of polycrystalline silicone; removing said patterned layer of silicon nitride; forming a first layer of refractory metal on said integrated circuit; baking said integrated circuit thus causing said layer of refractory metal to react with the surface of said patterned layer of polycrystalline silicon to form refractory metal silicide; removing the unreacted portion of said layer of refractory metal; forming a third layer of silicon dioxide on said integrated circuit; removing a portion of said third layer of silicon dioxide and said first layer of silicon dioxide so that silicon dioxide remains on the sidewalls of said patterned polycrystalline silicon layer and on those areas of said integrated circuit which will not receive a layer of refractory metal silicide; forming a second layer of refractory metal on said integrated circuit; baking said integrated circuit thus causing said second layer of refractory metal to react with the areas of said substrate and said polycrystalline silicon areas not covered by the remaining portion of said third layer of silicon dioxide and said first layer of silicon dioxide; and removing the unreacted portion of said second layer of refractory metal.
Claim 16
Dependent Claim
12 words
A process as in claim 11, wherein said refractory metal is titanium.
Claim 17
Dependent Claim
21 words
A process as in claim 11, wherein said third layer of silicon dioxide is deposited using low pressure chemical vapor deposition.
Claim 18
Dependent Claim
17 words
A process as in claim 11, wherein said first layer of refractory metal is deposited by sputtering.
Claim 19
Dependent Claim
17 words
A process as in claim 11, wherein said second layer of refractory metal is deposited by sputtering.
Claim 20
Dependent Claim
18 words
A process as in claim 11, wherein said second layer of silicon dioxide is formed by thermal oxidation.
Claim 21
Dependent Claim
328 words
A process for forming refractory metal silicide layers in both the polycrystalline silicon gate and the source and drain regions of a field effect transistor, wherein the thickness of the layer of refractory metal silicide in said polycrystalline silicon gate is different from the thickness of the refractory metal silicide layer in said source and drain regions, comprising the steps of: forming a first layer of silicon dioxide on said substrate; forming a layer of polycrystalline silicon on said first layer of silicon dioxide; forming a layer of silicon nitride on said layer of polycrystalline silicon; patterning said layer of polycrystalline silicon and said layer of silicon nitride to the same pattern, thus providing a patterned gate of polycrystalline silicon having a layer of silicon nitride on the surface thereof; forming a second layer of silicon dioxide on the exposed sidewalls of said patterned gate of polycrystalline silicon; forming a field oxide surrounding the area of said substrate in which said field effect transistor wil be formed; removing said patterned layer of silicon nitride; forming a first layer of refractory metal on said integrated circuit; baking said integrated circuit thus causing said layer of refractory metal to react with the surface of said patterned layer of polycrystalline silicon to form refractory metal silicide; removing the unreacted portion of said layer of refractory metal; removing a portion of said first and second layers of silicon dioxide so that silicon dioxide remains on the sidewalls of said patterned polycrystalline silicon layer and on those areas of said integrated circuit which will not receive a layer of refractory metal silicide; implanting and driving in dopant ions into said substrate to form said source and said drain regions; forming a second layer of refractory metal on said integrated circuit; baking said integrated circuit thus causing said second layer of refractory metal to react with said gate, source and drain regions; and removing the remaining portions of said second layer of refractory metal.
Claim 22
Dependent Claim
328 words
A process for forming refractory metal silicide layers in both the polycrystalline silicon gate and the source and drain regions of a field effect transistor, wherein the thickness of the layer of refractory metal silicide in said polycrystalline silicon gate is different from the thickness of the refractory metal silicide layer in said source and drain regions, comprising the steps of: forming a first layer of silicon dioxide on said substrate; forming a layer of polycrystalline silicon on said first layer of silicon dioxide; forming a layer of silicon nitride on said layer of polycrystalline silicon; patterning said layer of polycrystalline silicon and said layer of silicon nitride to the same pattern, thus providing a patterned gate of polycrystalline silicon having a layer of silicon nitride on the surface thereof; forming a second layer of silicon dioxide on the exposed sidewalls of said patterned gate of polycrystalline silicon; forming a field oxide surrounding the area of said substrate in which said field effect transistor wil be formed; removing said patterned layer of silicon nitride; forming a first layer of refractory metal on said integrated circuit; baking said integrated circuit thus causing said layer of refractory metal to react with the surface of said patterned layer of polycrystalline silicon to form refractory metal silicide; removing the unreacted portion of said layer of refractory metal; removing a portion of said first and second layers of silicon dioxide so that silicon dioxide remains on the sidewalls of said patterned polycrystalline silicon layer and on those areas of said integrated circuit which will not receive a layer of refractory metal silicide; implanting and driving in dopant ions into said substrate to form said source and said drain regions; forming a second layer of refractory metal on said integrated circuit; baking said integrated circuit thus causing said second layer of refractory metal to react with said gate, source and drain regions; and removing the remaining portions of said second layer of refractory metal.
Claim 23
Dependent Claim
17 words
A process as in claim 17, wherein said first layer of refractory metal is deposited by sputtering.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-05-12 | 1989-11-11 | 1990-05-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-05-12 | 1993-11-11 | 1994-05-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-05-12 | 1997-11-11 | 1998-05-13 | $7700.00 | Window Closed / Lapsed |