Patent US5236852A successfully refreshed from Google Patents.
US5236852A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for contacting a semiconductor device
Assignee: Motorola Solutions Inc
•
Filing: 1992-09-24
•
Granted: 1993-08-17
•
Expires: 2012-09-24
Abstract
Abstract An electrical contact (46) to a phosphorous doped polysilicon gate electrode (18) is formed by preventing arsenic, from a source and drain implant, from doping a portion (22) of the polysilicon gate electrode (18). A photoresist mask (20) covers a portion (22) of the polysilicon gate electrode (18) during the implant, thus preventing it from being doped. An electrical contact (46) is then formed to the masked portion (22) of the polysilicon gate electrode (18).
Inventors
- 👤 Michael Cherniawski
- 👤 Jeffrey M. Barker
- 👤 Ronald E. Pyle
- 👤 Vidya S. Kaushik
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 20:29
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/01; H10W20/031; Y; Y10; Y10S; Y10S148/00; Y10S148/019
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
170 words
A method of contacting a semiconductor device comprising the steps of: providing a substrate; forming a field isolation region within a portion of the substrate wherein the field isolation region defines an active region; forming a doped polysilicon member overlying the substrate; forming a mask overlying a first portion of the polysilicon member and exposing a second portion of the polysilicon member, wherein the first portion of the polysilicon member overlies a portion of the field isolation region adjacent to the active region; implanting a dopant to form a source region and a drain region within the active region wherein the dopant is implanted into the second portion of the polysilicon member and the mask substantially prevents the dopant from being implanted into the first portion of the polysilicon member; removing the mask; forming a dielectric layer overlying the polysilicon member; forming an opening in the dielectric layer to expose a contact portion of the first portion of the polysilicon member; and forming an electrical contact to the contact portion.
Claim 2
Independent Claim
170 words
A method of contacting a semiconductor device comprising the steps of: providing a substrate; forming a field isolation region within a portion of the substrate wherein the field isolation region defines an active region; forming a doped polysilicon member overlying the substrate; forming a mask overlying a first portion of the polysilicon member and exposing a second portion of the polysilicon member, wherein the first portion of the polysilicon member overlies a portion of the field isolation region adjacent to the active region; implanting a dopant to form a source region and a drain region within the active region wherein the dopant is implanted into the second portion of the polysilicon member and the mask substantially prevents the dopant from being implanted into the first portion of the polysilicon member; removing the mask; forming a dielectric layer overlying the polysilicon member; forming an opening in the dielectric layer to expose a contact portion of the first portion of the polysilicon member; and forming an electrical contact to the contact portion.
Claim 3
Dependent Claim
29 words
The method of claim 1 wherein the electrical contact comprises at least one material selected from the group consisting of titanium silicide, cobalt silicide, titanium nitride, tungsten, and aluminum.
Claim 4
Dependent Claim
24 words
The method of claim 1 wherein the step of forming a doped polysilicon member is further characterized as forming a phosphorous doped polysilicon member.
Claim 5
Dependent Claim
24 words
The method of claim 1 wherein the step of forming a doped polysilicon member is further characterized as forming an arsenic doped polysilicon member.
Claim 6
Dependent Claim
18 words
The method of claim 1 wherein the step of implanting the dopant is further characterized as implanting arsenic.
Claim 7
Dependent Claim
18 words
The method of claim 1 wherein the step of implanting the dopant is further characterized as implanting phosphorous.
Claim 8
Independent Claim
165 words
A method for contacting a semiconductor device comprising the steps of: providing a substrate; forming a field isolation region within a portion of the substrate wherein the field isolation region defines an active region; forming a doped polysilicon member overlying the substrate, wherein the polysilicon member serves as a control electrode for only a single transistor; forming a photoresist mask overlying a first portion of the polysilicon member and exposing a second portion of the polysilicon member; implanting a dopant to form a source region and a drain region within the active region wherein the dopant is implanted into the second portion of the polysilicon member and the mask substantially prevents the dopant from being implanted into the first portion of the polysilicon member; removing the photoresist mask; forming a dielectric layer overlying the polysilicon member; forming an opening in the dielectric layer to expose a contact portion of the first portion of the polysilicon member; and forming an electrical contact to the contact portion.
Claim 9
Independent Claim
165 words
A method for contacting a semiconductor device comprising the steps of: providing a substrate; forming a field isolation region within a portion of the substrate wherein the field isolation region defines an active region; forming a doped polysilicon member overlying the substrate, wherein the polysilicon member serves as a control electrode for only a single transistor; forming a photoresist mask overlying a first portion of the polysilicon member and exposing a second portion of the polysilicon member; implanting a dopant to form a source region and a drain region within the active region wherein the dopant is implanted into the second portion of the polysilicon member and the mask substantially prevents the dopant from being implanted into the first portion of the polysilicon member; removing the photoresist mask; forming a dielectric layer overlying the polysilicon member; forming an opening in the dielectric layer to expose a contact portion of the first portion of the polysilicon member; and forming an electrical contact to the contact portion.
Claim 10
Dependent Claim
29 words
The method of claim 7 wherein the electrical contact comprises at least one material selected from the group consisting of titanium silicide, cobalt silicide, titanium nitride, tungsten, and aluminum.
Claim 11
Dependent Claim
24 words
The method of claim 7 wherein the step of forming a doped polysilicon member is further characterized as forming a phosphorous doped polysilicon member.
Claim 12
Dependent Claim
24 words
The method of claim 7 wherein the step of forming a doped polysilicon member is further characterized as forming an arsenic doped polysilicon member.
Claim 13
Dependent Claim
18 words
The method of claim 7 wherein the step of implanting the dopant is further characterized as implanting arsenic.
Claim 14
Dependent Claim
18 words
The method of claim 7 wherein the step of implanting the dopant is further characterized as implanting phosphorous.
Claim 15
Independent Claim
172 words
A method for making a contact to a semiconductor device comprising the steps of: providing a substrate; forming a field isolation region within a portion of the substrate wherein the field isolation region defines an active region; forming a phosphorous doped polysilicon member overlying the substrate, wherein the polysilicon member serves as a control electrode for only a single transistor; forming a photoresist mask overlying a first portion of the polysilicon member and exposing a second portion of the polysilicon member; implanting arsenic to form a source region and a drain region within the active region wherein arsenic is implanted into the second portion of the polysilicon member and the mask substantially prevents arsenic from being implanted into the first portion of the polysilicon member; removing the photoresist mask; forming a dielectric layer overlying the polysilicon member; forming an opening in the dielectric layer to expose a contact portion of the first portion of the polysilicon member; and forming a layer of titanium silicide overlying and electrically coupled to the contact portion.
Claim 16
Independent Claim
172 words
A method for making a contact to a semiconductor device comprising the steps of: providing a substrate; forming a field isolation region within a portion of the substrate wherein the field isolation region defines an active region; forming a phosphorous doped polysilicon member overlying the substrate, wherein the polysilicon member serves as a control electrode for only a single transistor; forming a photoresist mask overlying a first portion of the polysilicon member and exposing a second portion of the polysilicon member; implanting arsenic to form a source region and a drain region within the active region wherein arsenic is implanted into the second portion of the polysilicon member and the mask substantially prevents arsenic from being implanted into the first portion of the polysilicon member; removing the photoresist mask; forming a dielectric layer overlying the polysilicon member; forming an opening in the dielectric layer to expose a contact portion of the first portion of the polysilicon member; and forming a layer of titanium silicide overlying and electrically coupled to the contact portion.
Claim 17
Dependent Claim
32 words
The method of claim 13 further comprising the step of: forming a patterned layer of conductive material, the patterned layer of conductive material being electrically coupled to the layer of titanium silicide.
References Cited (Backward Citations)
US3699646A
Cited
US4208781A
Cited
US4164461A
Cited
US4290185A
Cited
US4367580A
Cited
US4397076A
Cited
JPS60227469A
Cited
JPS61174767A
Cited
US5032537A
Cited
US5034348A
Cited
US5086017A
Cited
JPH06261358A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-08-16 | 1997-02-15 | 1997-08-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-08-16 | 2001-02-15 | 2001-08-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-08-16 | 2005-02-15 | 2005-08-17 | $7700.00 | Window Closed / Lapsed |