Patent US5235212A successfully refreshed from Google Patents.
US5235212A
Expired / Lapsed
US
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Semiconductor device having a mechanical buffer
Assignee: Toshiba Corp
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Filing: 1989-03-13
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Granted: 1993-08-10
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Expires: 2009-03-13
Abstract
Abstract A metal having a Knoop hardness of 40 or more is used as an electrode, Cu or a Cu alloy is used as a thin metal wire, and a mechanical buffer layer is formed between the electrode and an insulating material layer. Silicon nitride or metal vanadium is used as the mechanical buffer layer. The thin metal wire is fixed to the electrode metal by compression bonding.
Inventors
- 👤 Yoshio Shimizu
- 👤 Shoji Kotani
- 👤 Masatugi Kawaguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 19:56
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4473; H10W70/00; H10W70/40; H10W70/464; H10W70/465; H10W74/00; H10W74/10; H10W74/131; H10W74/137; H10W72/00; H10W72/01; H10W72/015; H10W72/01551; H10W72/071; H10W72/0711; H10W72/07141; H10W72/075; H10W72/07511; H10W72/07531; H10W72/07532; H10W72/07533; H10W72/07541; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/5525; H10W72/59; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/921; H10W72/922; H10W72/9226; H10W72/923; H10W72/951; H10W72/952; H10W72/981; H10W72/983; H10W90/00; H10W90/701; H10W90/731; H10W90/736; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
171 words
A semiconductor device comprising: a foundation portion; a semiconductor substrate formed on said foundation portion; an insulating material layer formed on said semiconductor substrate; a wiring layer formed on said insulating material layer; a passivation layer formed on said wiring layer; an opening portion formed in said wiring and passivation layers; a mechanical buffer layer, for preventing cracks in said insulating material layer at times when a load is applied to the insulating material layer, formed on said insulating material layer in the opening portion of said wiring and passivation layers, wherein one of silicon nitride and metal vanadium is used as said mechanical buffer layer; an electrode formed on said mechanical buffer layer in said opening portion, said electrode having a Knoop hardness of at least 40; and a thin metal wire composed of copper; wherein one end of said thin metal wire is connected to said electrode by compression bonding and the other end of said thin metal wire is connected to an inner lead of a lead frame.
Claim 2
Dependent Claim
171 words
A semiconductor device comprising: a foundation portion; a semiconductor substrate formed on said foundation portion; an insulating material layer formed on said semiconductor substrate; a wiring layer formed on said insulating material layer; a passivation layer formed on said wiring layer; an opening portion formed in said wiring and passivation layers; a mechanical buffer layer, for preventing cracks in said insulating material layer at times when a load is applied to the insulating material layer, formed on said insulating material layer in the opening portion of said wiring and passivation layers, wherein one of silicon nitride and metal vanadium is used as said mechanical buffer layer; an electrode formed on said mechanical buffer layer in said opening portion, said electrode having a Knoop hardness of at least 40; and a thin metal wire composed of copper; wherein one end of said thin metal wire is connected to said electrode by compression bonding and the other end of said thin metal wire is connected to an inner lead of a lead frame.
Claim 3
Dependent Claim
166 words
A semiconductor device comprising: a foundation portion; a semiconductor substrate formed on said foundation portion; an insulating material layer formed on said semiconductor substrate; a wiring layer formed on said insulating material layer; a passivation layer formed on said wiring layer; an opening portion formed in said wiring and passivation layers; a mechanical buffer layer, for preventing cracks in said insulating material layer at times when a loan is applied to the insulating material layer, made of silicon nitride and formed on said insulating material layer in the opening portion of said wiring and passivation layers; an electrode formed on said mechanical buffer layer in said opening portion, said electrode having a Knoop hardness of at least 40 ; and a thin metal wire composed of copper or a copper alloy; wherein one end of said thin metal wire is bonded to said electrode by compression bonding and the other end of said thin metal wire is connected to an inner lead of a lead frame.
Claim 4
Dependent Claim
166 words
A semiconductor device comprising: a foundation portion; a semiconductor substrate formed on said foundation portion; an insulating material layer formed on said semiconductor substrate; a wiring layer formed on said insulating material layer; a passivation layer formed on said wiring layer; an opening portion formed in said wiring and passivation layers; a mechanical buffer layer, for preventing cracks in said insulating material layer at times when a loan is applied to the insulating material layer, made of silicon nitride and formed on said insulating material layer in the opening portion of said wiring and passivation layers; an electrode formed on said mechanical buffer layer in said opening portion, said electrode having a Knoop hardness of at least 40 ; and a thin metal wire composed of copper or a copper alloy; wherein one end of said thin metal wire is bonded to said electrode by compression bonding and the other end of said thin metal wire is connected to an inner lead of a lead frame.
Claim 5
Dependent Claim
16 words
A device according to claim 1, wherein said mechanical buffer layer is made of metal vanadium.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-08-09 | 1997-02-08 | 1997-08-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-08-09 | 2001-02-08 | 2001-08-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-08-09 | 2005-02-08 | 2005-08-10 | $7700.00 | Window Closed / Lapsed |