Semiconductor device

Abstract

Abstract PURPOSE:To enable to arbitrarily obtain a desired rise voltage by stabling the rise voltage in a forward direction by a method wheren a metallic electrode layer has a multilayer structure of superposition of a silicide layer of palladium, etc., a nitride layer of titanium, etc., and an aluminum or an aluminum alloy layer in this order from the side of a substrate. CONSTITUTION:The metallic electrode layer, from the side of the semiconductor substrate, has superposition of (1) of the silicide layer of a metal selected from the group composed of palladium (Pd), rhodium (Rh), nickel (Ni), cobalt (Co), molybdenum (Mo), vanadium (V), tungsten (W), hafnium (Hf), titanium (Ti), tantalum (Ta), platinum (Pt) and zirconium (Zr), (2) the nitride layer of a high melting point metal selected from the group composed of Ti, Ta, W, Hf, Mo, Zr, niobium (Nb), V and chrome (Cr), and (3) the layer of Al or Al alloy in this order; i.e., is formed in a multilayer structure.

Inventors

• 👤 Toru Takeuchi
• 👤 竹内　透
• 👤 Kiyoshi Watabe
• 👤 渡部　潔

Bibliographic Details