Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To make it pssible to manufacture a semiconductor device that provides high thermal resistance, and ohmic contact or Schottky junction which can withstand high current density, by a method wherein a third titanium nitride layer is formed between a silicide layer and an aluminum layer of a silicon semiconductor device. CONSTITUTION:Titanium or platinum 3' is deposited by about 200Angstrom using a regular method, and titanium silicide or platinum silicide 3 is formed by heat treatment. The titanium or platinum 3' left on a silicon oxide film 2 is removed by etching, and titanium nitride 4 is formed, for example, by 1,000Angstrom using the reactive spattering method in the mixed gas of argon and nitrogen, then aluminum 5 is formed, for example, by 1.5mum using the vacuum evaporation method. A pattern is formed on the aluminum and only titanium nitride is removed with etching liquid which contains 1g of ethylenediaminetetraacetic acid in 1l of hydrogen peroxide aqueous solution. With this structure, a junction short-circuit and an abnormally high Schottky junction barrier can be restrained, thus the yield is improved and remarkable improvement of reliability is obtained under high current density.

Inventors

• 👤 Shuichi Kanamori
• 👤 金森　周一
• 👤 Masamichi Mori
• 👤 正道 森

Bibliographic Details