US4845543A
Expired / Lapsed
US
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Semiconductor device and method of manufacturing the same
Assignee: Hitachi Ltd
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Filing: 1987-06-29
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Granted: 1989-07-04
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Expires: 2007-06-29
Abstract
Abstract A semiconductor device in which a pellet and external leads are connected by bonding wires made of aluminum containing a predetermined amount of at least one additive element, the bonding wires containing 0.05 to 3.0 weight % of at least one element selected from the group consisting of iron and palladium, or containing 0.05-3.0 weight % of at least one first element selected from the group consisting of nickel, iron and palladium and 0.05-3.0 weight % of at least one second element selected from the group consisting of magnesium, manganese and silicon, whereby the corrosion resistance of the wire is increased and the breaking strength of the wire is enhanced. The bonding wires can be connected to the semiconductor pellet by a ball bond, and it is disclosed that using a ball having a Vickers hardness of 30-50 enables good bonding of the bonding wire to, e.g., an aluminum pad on the semiconductor pellet to be achieved. A ball having such hardness can be provided by using specific aluminum alloy compositions and by a quenching of the ball. The bonding wire has the shape and height of its loop controlled by annealing the bonding wire at a specified temperature before bonding or by employing a specified composition for the material of the bonding wire. The loop shape and bondability of the bonding wire, which can be made of aluminum or an aluminum composition containing, e.g., about 1.5 weight % of magnesium, are controlled into the best states.
Inventors
- 👤 Susumu Okikawa
- 👤 Hiroshi Mikino
- 👤 Hiromichi Suzuki
- 👤 Wahei Kitamura
- 👤 Daiji Sakamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:26
CPC Classifications
B; B23; B23K; B23K20/00; B23K20/002; B23K20/004; B23K20/005; B23K20/007; C; C22; C22C; C22C21/00; H; H10; H10W; H10W72/00; H10W72/01; H10W72/015; H10W72/019; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W70/682; H10W72/01551; H10W72/071; H10W72/0711; H10W72/07141; H10W72/073; H10W72/07331; H10W72/07336; H10W72/075; H10W72/07511; H10W72/07521; H10W72/07531; H10W72/07532; H10W72/07533; H10W72/30; H10W72/321; H10W72/325; H10W72/351; H10W72/352; H10W72/353; H10W72/354; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/59; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/951; H10W72/952; H10W72/981; H10W72/983; H10W74/00; H10W90/00; H10W90/701; H10W90/731; H10W90/734; H10W90/736; H10W90/751; H10W90/754; H10W90/756
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
230 words
A semiconductor device comprising: (a) a semiconductor pellet having a plurality of bonding pads formed on one of the major surfaces thereof; (b) external conductive portions extending outside the pellet; (c) bonding wires containing aluminum as their principal ingredient, one end of each of which has been connected to the respective bonding pads through a ball formed at the one end thereof, so as to provide a ball bond between the wire and respective bonding pad, and the other end of each of which has been connected to the respective conductive Portions through wedge bonding to provide a wedge bond between the wire and respective conductive portion; said each wire being formed of an aluminum alloy consisting essentially of aluminum and 0.05-3.0 weight % of a first element consisting of nickel, and 0.5-30. weight % of at least one second element selected from the group consisting of magnesium and manganese, such that said ball has a Vickers hardness of 35-45, whereby corrosion resistance, as well as mechanical strength, of the wire is improved, as compared to that of a wire formed of aluminum without the first element and the at least one second element, and whereby improved bonding of the ball bond without damage to the underlying bonding pad, as compared to that of a wire having a ball with a Vickers hardness outside the range of 35-45, is achieved.
Claim 2
Dependent Claim
230 words
A semiconductor device comprising: (a) a semiconductor pellet having a plurality of bonding pads formed on one of the major surfaces thereof; (b) external conductive portions extending outside the pellet; (c) bonding wires containing aluminum as their principal ingredient, one end of each of which has been connected to the respective bonding pads through a ball formed at the one end thereof, so as to provide a ball bond between the wire and respective bonding pad, and the other end of each of which has been connected to the respective conductive Portions through wedge bonding to provide a wedge bond between the wire and respective conductive portion; said each wire being formed of an aluminum alloy consisting essentially of aluminum and 0.05-3.0 weight % of a first element consisting of nickel, and 0.5-30. weight % of at least one second element selected from the group consisting of magnesium and manganese, such that said ball has a Vickers hardness of 35-45, whereby corrosion resistance, as well as mechanical strength, of the wire is improved, as compared to that of a wire formed of aluminum without the first element and the at least one second element, and whereby improved bonding of the ball bond without damage to the underlying bonding pad, as compared to that of a wire having a ball with a Vickers hardness outside the range of 35-45, is achieved.
Claim 3
Dependent Claim
16 words
A semiconductor device according to claim 1, wherein said semiconductor device is molded within a resin.
Claim 4
Dependent Claim
23 words
A semiconductor device according to claim 1, wherein the first element nickel is present in an amount of at least 0.075 weight %.
Claim 5
Dependent Claim
16 words
A semiconductor device according to claim 3, wherein said semiconductor device is molded within a resin.
Claim 6
Dependent Claim
214 words
A semiconductor device comprising: (a) a semiconductor pellet having a plurality of bonding pads formed on one of the major surfaces thereof; (b) external conductive leads disposed outside the pellet; (c) bonding wires of an aluminum alloy, one end of each of which has been connected to the respective bonding pads through a ball formed at the one end thereof, so as to provide a ball bond between each bonding wire and the respective bonding pad, and the other end of each of which has been connected to the respective conductive leads by wedge bonding so as to provide a wedge bond between the other end of each bonding wire and the respective conductive lead; the aluminum alloy containing nickel and also containing at least one of magnesium or manganese so as to provide a Vickers hardness of 35-45 at the ball portion thereof, whereby corrosion resistance, as well as mechanical strength, of the wire is improved, as compared to that of a wire formed of aluminum without the first element and the at least one second element, and whereby improved bonding of the ball bond without damage to the underlying bonding pad, as compared to that of a wire having a ball with a Vickers hardness outside the range of 35-45, is achieved.
Claim 7
Dependent Claim
214 words
A semiconductor device comprising: (a) a semiconductor pellet having a plurality of bonding pads formed on one of the major surfaces thereof; (b) external conductive leads disposed outside the pellet; (c) bonding wires of an aluminum alloy, one end of each of which has been connected to the respective bonding pads through a ball formed at the one end thereof, so as to provide a ball bond between each bonding wire and the respective bonding pad, and the other end of each of which has been connected to the respective conductive leads by wedge bonding so as to provide a wedge bond between the other end of each bonding wire and the respective conductive lead; the aluminum alloy containing nickel and also containing at least one of magnesium or manganese so as to provide a Vickers hardness of 35-45 at the ball portion thereof, whereby corrosion resistance, as well as mechanical strength, of the wire is improved, as compared to that of a wire formed of aluminum without the first element and the at least one second element, and whereby improved bonding of the ball bond without damage to the underlying bonding pad, as compared to that of a wire having a ball with a Vickers hardness outside the range of 35-45, is achieved.
Claim 8
Dependent Claim
20 words
A semiconductor device according to claim 5, wherein nickel is contained in an amount of at least 0.075 weight %.
Claim 9
Dependent Claim
30 words
A semiconductor device according to claim 6, wherein said each wire also contains 0.5-3.0 weight % of at least one element selected from the group consisting of magnesium and manganese.
Claim 10
Dependent Claim
27 words
A semiconductor device according to claim 7 wherein said each wire contains 1.0 weight % of nickel, 0.5 weight % of manganese and a balance of aluminum.
Claim 11
Dependent Claim
27 words
A semiconductor device according to claim 7, wherein said each wire contains 1.0 weight % of nickel, 1.0 weight % of manganese and a balance of aluminum.
Claim 12
Dependent Claim
27 words
A semiconductor device according to claim 7, wherein said each wire contains 0.5 weight % of nickel, 1.0 weight % of manganese and a balance of aluminum.
Claim 13
Dependent Claim
27 words
A semiconductor device according to claim 7, wherein said each wire contains 1.7 weight % of magnesium, 0.5 weight % of nickel and a balance of aluminum.
Claim 14
Dependent Claim
17 words
A semiconductor device according to claim 7, wherein said each wire contains 2 weight % of nickel.
Claim 15
Dependent Claim
17 words
A semiconductor device according to claim 8, wherein said each wire contains 2 weight % of nickel.
Claim 16
Dependent Claim
23 words
A semiconductor device according to claim 7, wherein said each wire contains 0.1 weight % of nickel and 1.5 weight % of magnesium.
Claim 17
Dependent Claim
27 words
A semiconductor device according to claim 5, wherein the other end of each of the bonding wires is connected to the respective conductive portions by wedge bonding.
Claim 18
Dependent Claim
306 words
A semiconductor device comprising: (a) a semiconductor pellet; (b) a plurality of bonding pads formed on a first major surface of the semiconductor pellet; (c) a plurality of conductive lead members, each one of which plurality of lead members has an end portion which is disposed outside of the semiconductor pellet in the vicinity of a respective one of the bonding pads; and (d) a plurality of bonding wires, one end of each of which plurality of bonding wires is connected to a respective bonding pad by a ball bond, said ball bond being provided with ball portions at said one end of each of the plurality of bonding wires, each of the ball portions being ball portions formed at said one end of each of the plurality of bonding wires by an electric discharge at said one end of each of the plurality of bonding wires, each ball portion being of Vickers hardness of 30 to 50, the ball bond being a bond formed by ultrasonic bonding of the ball portion to the respective bonding pad, and the other end of each of which plurality of bonding wires is connected to the end portion of a respective conductive lead member in the vicinity of the respective one of the bonding pads, so as to provide each of the bonding wires in a wire loop shape, said plurality of bonding wires each consisting essentially of a material selected from the group consisting of aluminum and aluminum alloy, said plurality of bonding wires being bonding wires formed by heat treating wires for forming the bonding wires, the that treating being performed at a temperature higher than the recrystallization starting temperature of the wire and at most the temperature maximizing the expansion percentage, so as to provide each of the bonding wires with the proper wire loop shape.
Claim 19
Dependent Claim
306 words
A semiconductor device comprising: (a) a semiconductor pellet; (b) a plurality of bonding pads formed on a first major surface of the semiconductor pellet; (c) a plurality of conductive lead members, each one of which plurality of lead members has an end portion which is disposed outside of the semiconductor pellet in the vicinity of a respective one of the bonding pads; and (d) a plurality of bonding wires, one end of each of which plurality of bonding wires is connected to a respective bonding pad by a ball bond, said ball bond being provided with ball portions at said one end of each of the plurality of bonding wires, each of the ball portions being ball portions formed at said one end of each of the plurality of bonding wires by an electric discharge at said one end of each of the plurality of bonding wires, each ball portion being of Vickers hardness of 30 to 50, the ball bond being a bond formed by ultrasonic bonding of the ball portion to the respective bonding pad, and the other end of each of which plurality of bonding wires is connected to the end portion of a respective conductive lead member in the vicinity of the respective one of the bonding pads, so as to provide each of the bonding wires in a wire loop shape, said plurality of bonding wires each consisting essentially of a material selected from the group consisting of aluminum and aluminum alloy, said plurality of bonding wires being bonding wires formed by heat treating wires for forming the bonding wires, the that treating being performed at a temperature higher than the recrystallization starting temperature of the wire and at most the temperature maximizing the expansion percentage, so as to provide each of the bonding wires with the proper wire loop shape.
Claim 20
Dependent Claim
19 words
A semiconductor device according to claim 16, wherein each ball portion has a Vickers hardness of 35 to 45.
Claim 21
Dependent Claim
53 words
A semiconductor device according to claim 16, wherein the bonding wires has an aluminum alloy grain structure, the grain structure changing in size at most only gradually along the length of the wires such that wire breakage, due to a lateral tension on the wire upon forming the wire loop shape, is avoided.
Claim 22
Dependent Claim
27 words
A semiconductor device according to claim 1, wherein the first element consisting of Ni is contained in the aluminum alloy in an amount of 0.075-3.0 weight %.
Claim 23
Dependent Claim
16 words
A semiconductor device according to claim 1, wherein said at least one second element is magnesium.
Claim 24
Dependent Claim
27 words
A semiconductor device according to claim 1, wherein the aluminum alloy consists essentially of aluminum and 1.0 weight % of Ni and 0.5 weight % of Mn.
Claim 25
Dependent Claim
27 words
A semiconductor device according to claim 1, wherein the aluminum alloy consists essentially of aluminum and 1.0 weight % of Ni and 1.0 weight % of Mn.
Claim 26
Dependent Claim
27 words
A semiconductor device according to claim 1, wherein the aluminum alloy consists essentially of aluminum and 0.5 weight % of Ni and 1.0 weight % of Mn.
Claim 27
Dependent Claim
25 words
A semiconductor device according to claim 1, wherein the aluminum alloy consists essentially of 0.1 weight % of Ni and 1.5 weight % of Mg.
Claim 28
Dependent Claim
106 words
A semiconductor device according to claim 1, wherein Ni is contained in the aluminum alloy in an amount in the range of from 0.05 to less than 0.20 weight % and from more than 1.60 to 3.0 weight %; and wherein said at least one second element is contained in the aluminum alloy in an amount of 0.5-3.0 weight %, except for 1.0 weight %, where said at least one second element is Mn, and is contained in the aluminum alloy in an amount of more than 1.0 to 3.0 weight %, except for 2.0 weight %, where said at least one second element is Mg.
Claim 29
Dependent Claim
30 words
A semiconductor device according to claim 25, wherein Ni is contained in the aluminum alloy in an amount in the range of from 0.075, to less than 0.20, weight %.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-07-03 | 1993-01-02 | 1993-07-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-07-03 | 1997-01-02 | 1997-07-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-07-03 | 2001-01-02 | 2001-07-04 | $7700.00 | Window Closed / Lapsed |