EP0088557A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Resin encapsulated semiconductor device
Assignee: Hitachi Ltd
•
Filing: 1983-02-23
•
Granted: —
•
Expires: 2003-02-23
Abstract
Abstract A resin encapsulated semiconductor device comprises a semiconductor element (3), a conductive terminal (4) and a wire (1) connecting the element (3) and the terminal (4). A thermosetting resin (12) encapsulates the component hermetically to protect the device from a mechanical stress and ambient atmosphere. In order to achieve good bonding of the wire (1) at its ends, the wire (1) is made of a metal (e.g. Al) having in the annealed state a maximum elongation at room temperature of not more than 60%, the wire having been annealed before the bonding.
Inventors
- 👤 Jin Onuki
- 👤 Masateru Suwa
- 👤 Masahiro Koizumi
- 👤 Tomio Iizuka
- 👤 Takeo Tamamura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 13:15
CPC Classifications
B; B23; B23K; B23K20/00; B23K20/002; B23K20/004; B23K20/005; B23K20/007; H; H10; H10W; H10W70/00; H10W70/40; H10W70/456; H10W70/457; H10W70/464; H10W70/465; H10W72/00; H10W72/071; H10W72/50; H10W74/00; H10W74/10; H10W74/111; H10W74/121; B23K2101/00; B23K2101/36; B23K2101/42; H10W72/01; H10W72/015; H10W72/01551; H10W72/01565; H10W72/0711; H10W72/07141; H10W72/073; H10W72/075; H10W72/07511; H10W72/07521; H10W72/07531; H10W72/07532; H10W72/07533; H10W72/07541; H10W72/07551; H10W72/07555; H10W72/531; H10W72/536; H10W72/5363; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/5525; H10W72/59; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/951; H10W72/952; H10W90/00; H10W90/701; H10W90/731; H10W90/734; H10W90/736; H10W90/751; H10W90/756; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12431
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
92 words
A resin encapsulated semiconductor device having at least one semiconductor element (3) which has at least one electrical connection thereto by means of a wire (1) which has been subjected to solid-state bonding, said element and wire being encapsulated hermetically with a thermosetting resin (12) to protect the element and wire from mechanical stress and ambient atmosphere, characterized in that said wire (1) is made of a metal having in the annealed state a maximum elongation at room temperature of not more than 60%, the wire having been annealed before the bonding.
Claim 2
Dependent Claim
92 words
A resin encapsulated semiconductor device having at least one semiconductor element (3) which has at least one electrical connection thereto by means of a wire (1) which has been subjected to solid-state bonding, said element and wire being encapsulated hermetically with a thermosetting resin (12) to protect the element and wire from mechanical stress and ambient atmosphere, characterized in that said wire (1) is made of a metal having in the annealed state a maximum elongation at room temperature of not more than 60%, the wire having been annealed before the bonding.
Claim 3
Dependent Claim
38 words
A device as defined in claim 1, wherein said wire (1) is connected at one end to said semiconductor element by ball-bonding, while the other end of said wire is connected to an external terminal (4) by wedge-bonding.
Claim 4
Dependent Claim
31 words
A device as defined in claim 2 wherein the ball used in the ball-bonding is formed by fusion by means of arc discharge in a non-oxidizing atmosphere including a reducing component.
Claim 5
Dependent Claim
41 words
A device as defined in claim 2 or claim 3 wherein the bonding surfaces of said semiconductor element and said external terminal are not coplanar, and the ball-bonding and the wedge-bonding are each effected by ultrasonic bonding or thermal contact bonding.
Claim 6
Independent Claim
84 words
A device as defined in any one of claims 2 to 4, wherein the ball used in the ball-bonding is ball-bonded to an A1 thin film formed on said semiconductor element while the other end of said wire is wedge-bonded to an Ag, Ni or Aℓ thin film formed on the surface of said external terminal which is made of a Cu or Fe-Ni alloy, and said semiconductor element, said wire and a part of said external terminal are enclosed within said molded resin.
Claim 7
Independent Claim
33 words
A device as defined in any one of claims 1 to 5 wherein said wire is, prior to the bonding, full annealed to such an extent that it contains substantially no elastic deformation.
Claim 8
Independent Claim
26 words
A device as defined in any one of claims 1 to 6 wherein said wire has a diameter in the range of 20 to 100 pm.
Claim 9
Independent Claim
29 words
A device as defined in any one of claims 1 to 7 wherein said wire has a specific resistance at room temperature (20°C) of not more than 15 µΩcm.
Claim 10
Independent Claim
32 words
A device as defined in any one of claims 1 to 8 wherein said wire is made of one of Aℓ, Cu, Ag, Ni, Pd, Pt, Mo, Ti, Zr, Nb and Th.
Claim 11
Dependent Claim
13 words
A device as defined in claim 9 wherein the wire is of Aℓ.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.