Semiconductor device

Abstract

Abstract PURPOSE:To prevent corrosion of a second bonding pad layer at the place of a through hole beneath a thin metal wire and to prevent corrosion of a first bonding pad layer, which is continued from the second layer, by connecting the first and second bonding pad layers via the through hole, and positioning the through hole in the contact surface of the thin metal wire. CONSTITUTION:An aluminum layer 3 constitutes a first bonding pad layer 4, a pad taking out part 5 and an inner wiring 6, which is extended to a circuit element. The first bonding pad layer 4 is connected to the circuit element. An interlayer insulating film 7 is formed on the aluminum layer 3. A through hole 8 is formed in the interlayer insulating film 7. An aluminum film is deposited. The aluminum film is patterned and second bonding pad layer 9 is formed. At this time, the first and second bonding pad layers 4 and 9 are connected with the through holes 8. A window 11 is provided,and the second bonding pad layer 9 is exposed. One end of a thin metal wire 12, which is connected to an outer lead, is connected to the exposed surface by a thermal compression method.

Inventors

• 👤 Hideyuki Kondo
• 👤 近藤　日出行

Bibliographic Details