US5229258A
Expired / Lapsed
US
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Method for producing a resist structure
Assignee: Qimonda AG
•
Filing: 1991-04-08
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Granted: 1993-07-20
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Expires: 2011-04-08
Abstract
Abstract High resolution resist structures with steep edges are obtained using standard equipment, even in cases involving critical contact-hole planes. First, a photoresist layer containing a polymer with chemically reactive groups and a photoactive component based on diazoketone or quinone diazide is deposited on a substrate. The photoresist layer is then irradiated with a patterned image and treated with a polyfunctional organic compound having functional groups that can chemically react with the reactive groups of the polymer. This step is followed by a maskless flood exposure. The photoresist layer irradiated in this manner is then treated with a metal-containing organic compound having at least one functional group capable of chemical reaction with the reactive groups of the polymer, followed by etching in an oxygen-containing plasma.
Inventors
- 👤 Recai Sezi
- 👤 Horst Borndorfer
- 👤 Eva Rissel
- 👤 Rainer Leuschner
- 👤 Michael Sebald
- 👤 Hellmut Ahne
- 👤 Siegfried Birkle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 19:14
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/20; G03F7/2022; G03F7/26; G03F7/38; G03F7/265
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
136 words
A method for producing high resolution resist structures with steep edges, comprising the steps of: applying to a substrate a photoresist layer comprising a polymer having chemically reactive groups and a photoactive component selected from the group consisting of diazoketone and quinone diazide; irradiating the applied photoresist layer with a patterned image; treating the irradiated photoresist layer with a polyfunctional metal-free organic compound cross-linking agent having functional groups that chemically react with the reactive groups of the polymer in the irradiated areas to block the polymer; exposing the treated photoresist layer to a flood exposure; treating the flood exposed photoresist layer with a metal-containing organic compound having at least one functional group that chemically reacts with the reactive groups of the polymer in the unblocked areas; and etching the resulting photoresist layer in an oxygen-containing plasma.
Claim 2
Independent Claim
136 words
A method for producing high resolution resist structures with steep edges, comprising the steps of: applying to a substrate a photoresist layer comprising a polymer having chemically reactive groups and a photoactive component selected from the group consisting of diazoketone and quinone diazide; irradiating the applied photoresist layer with a patterned image; treating the irradiated photoresist layer with a polyfunctional metal-free organic compound cross-linking agent having functional groups that chemically react with the reactive groups of the polymer in the irradiated areas to block the polymer; exposing the treated photoresist layer to a flood exposure; treating the flood exposed photoresist layer with a metal-containing organic compound having at least one functional group that chemically reacts with the reactive groups of the polymer in the unblocked areas; and etching the resulting photoresist layer in an oxygen-containing plasma.
Claim 3
Dependent Claim
12 words
The method of claim 1, wherein the polymer contains chemically anhydride groups.
Claim 4
Dependent Claim
13 words
The method of claim 2, wherein the polyfunctional organic compound is a polyamine.
Claim 5
Dependent Claim
12 words
The method of claim 3, wherein the polyamine is an aliphatic polyamine.
Claim 6
Dependent Claim
14 words
The method of claim 4, wherein the metal-containing organic compound is an organosilicon compound.
Claim 7
Dependent Claim
12 words
The method of claim 5, wherein the organosilicon compound is a diaminosiloxane.
Claim 8
Dependent Claim
24 words
The method of claim 6, wherein the step of treating the irradiated photoresist layer with a polyfunctional organic compound is conducted at room temperature.
Claim 9
Dependent Claim
27 words
The method claim 7, wherein the step of treating the flood exposed photoresist layer with a metal-containing organic compound is conducted by means of a water-alcohol-based solution.
Claim 10
Dependent Claim
33 words
The method of claim 8, further comprising the step of: subjecting the treated photoresist layer to an elevated temperature prior to the step of exposing the treated photoresist layer to a flood exposure.
Claim 11
Dependent Claim
13 words
The method of claim 9, wherein the substrate is a dry-etchable planarization layer.
Claim 12
Dependent Claim
14 words
The method of claim 2, wherein the metal-containing organic compound is an organosilicon compound.
Claim 13
Dependent Claim
12 words
The method of claim 11, wherein the organosilicon compound is a diaminosiloxane.
Claim 14
Dependent Claim
13 words
The method of claim 1, wherein the polyfunctional organic compound is a polyamine.
Claim 15
Dependent Claim
12 words
The method of claim 13, wherein the polyamine is an aliphatic polyamine.
Claim 16
Dependent Claim
14 words
The method of claim 1, wherein the metal-containing organic compound is an organosilicon compound.
Claim 17
Dependent Claim
12 words
The method of claim 15, wherein the organosilicon compound is a diaminosiloxane.
Claim 18
Dependent Claim
24 words
The method of claim 1, wherein the step of treating the irradiated photoresist layer with a polyfunctional organic compound is conducted at room temperature.
Claim 19
Dependent Claim
28 words
The method of claim 1, wherein the step of treating the flood exposed photoresist layer with a metal-containing organic compound is conducted by means of a water-alcohol-based solution.
Claim 20
Dependent Claim
33 words
The method of claim 1, further comprising the step of: subjecting the treated photoresist layer to an elevated temperature prior to the step of exposing the treated photoresist layer to a flood exposure.
Claim 21
Dependent Claim
13 words
The method of claim 1, wherein the substrate is a dry-etchable planarization layer.
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| 3.5 Years (Year 4) | 1996-07-19 | 1997-01-18 | 1997-07-20 | $2000.00 | Window Closed / Lapsed |
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