EP0354536A1
Expired / Lapsed
EP
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Pattering method
Assignee: Toshiba Corp
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Filing: 1989-08-08
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Granted: —
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Expires: 2009-08-08
Abstract
Abstract A photosensitive organic resin layer (2) is formed on a semiconductor substrate (1). The resin layer is treated with ammonia before or after the resin layer is exposed. Then, the exposed organic resin layer (2, 5a) is easily silylated. Due to the ammonia treatment, non-exposed portions (5a) of the organic resin layer are hardly silylated so that a high aspect ratio of patterning is realized.
Inventors
- 👤 Shinichi Ito
- 👤 Haruo Okano
- 👤 Makoto Nakase
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 01:47
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; G; G03; G03F; G03F7/00; G03F7/26; G03F7/265; H10P76/00; H10P76/20; H10P76/204; H10P76/2041
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
104 words
A method of patterning a semiconductor substrate, comprising the steps of: forming a photosensitive organic resin layer on the surface of the substrate; selectively exposing the organic resin layer according to a predetermined pattern to form exposed and non-exposed portions of the organic resin layer; applying silicon compounds to the organic resin layer to form a silylated layer on the surface of each of the exposed portions; and etching the non-exposed portions of the organic resin layer to remove the non-exposed portions, the photosensitive organic resin layer being treated with alkali before the step of applying the silicon compounds to the organic resin layer.
Claim 2
Independent Claim
104 words
A method of patterning a semiconductor substrate, comprising the steps of: forming a photosensitive organic resin layer on the surface of the substrate; selectively exposing the organic resin layer according to a predetermined pattern to form exposed and non-exposed portions of the organic resin layer; applying silicon compounds to the organic resin layer to form a silylated layer on the surface of each of the exposed portions; and etching the non-exposed portions of the organic resin layer to remove the non-exposed portions, the photosensitive organic resin layer being treated with alkali before the step of applying the silicon compounds to the organic resin layer.
Claim 3
Dependent Claim
16 words
The method as claimed in claim 1, wherein the photosensitive organic resin layer contains diazoquinone derivatives.
Claim 4
Dependent Claim
25 words
The method as claimed in claim 1, wherein the step of etching the non-exposed portions is carried out according to a reactive ion etching technique.
Claim 5
Dependent Claim
28 words
The method as claimed in claim 1, wherein the basic treatment is carried out just before or just after the step of selectively exposing the organic resin layer.
Claim 6
Dependent Claim
12 words
The method as claimed in claim 1, wherein the basic is ammonia.
Claim 7
Dependent Claim
25 words
The method as claimed in claim 5, wherein the basic treatment is done by holding the organic resin layer in a heated atmosphere of ammonia.
Claim 8
Dependent Claim
22 words
The method as claimed in claim 5, wherein the basic treatment is done by soaking the organic resin layer in basic solution.
Claim 9
Dependent Claim
14 words
The method as claimed in claim 5, wherein the basic solution is ammonia water.
Claim 10
Independent Claim
92 words
A method of patterning a semiconductor substrate, comprising the steps of: forming a photosensitive organic resin layer on the surface of the substrate; selectively exposing the organic resin layer according to a predetermined pattern to form exposed and non-exposed portions of the organic resin layer; applying silicon compounds to the organic resin layer to form a silylated layer on the surface of each of the exposed portions; carrying out a surface hardening treatment on the silylated layer; and etching the non-exposed portions of the organic resin layer to remove the non-exposed portions.
Claim 11
Independent Claim
92 words
A method of patterning a semiconductor substrate, comprising the steps of: forming a photosensitive organic resin layer on the surface of the substrate; selectively exposing the organic resin layer according to a predetermined pattern to form exposed and non-exposed portions of the organic resin layer; applying silicon compounds to the organic resin layer to form a silylated layer on the surface of each of the exposed portions; carrying out a surface hardening treatment on the silylated layer; and etching the non-exposed portions of the organic resin layer to remove the non-exposed portions.
Claim 12
Dependent Claim
23 words
The method according to claim 9, wherein the surface hardening treatment is done by exposing the organic resin layer to an oxidizing atmosphere.
Claim 13
Dependent Claim
13 words
The method according to claim 10, wherein the oxidizing atmosphere is oxygen plasma.
Claim 14
Independent Claim
100 words
A method of patterning a semiconductor substrate, comprising the steps of: forming a photosensitive organic resin layer on the surface of the substrate; selectively exposing the organic resin layer according to a predetermined pattern to form exposed and non-exposed portions of the organic resin layer; applying silicon compounds to the organic resin layer to form a silylated layer on the surface of each of the exposed portions; etching the whole surface of the organic resin layer to remove undesirable silicon absorbed layers on the surfaces of the non-exposed portions; and selective etching the non-exposed portions of the organic resin layer.
Claim 15
Independent Claim
100 words
A method of patterning a semiconductor substrate, comprising the steps of: forming a photosensitive organic resin layer on the surface of the substrate; selectively exposing the organic resin layer according to a predetermined pattern to form exposed and non-exposed portions of the organic resin layer; applying silicon compounds to the organic resin layer to form a silylated layer on the surface of each of the exposed portions; etching the whole surface of the organic resin layer to remove undesirable silicon absorbed layers on the surfaces of the non-exposed portions; and selective etching the non-exposed portions of the organic resin layer.
Claim 16
Dependent Claim
22 words
The method according to claim 12, wherein etching the whole surface of the organic resin layer is used of plasmized rare gases.
Claim 17
Dependent Claim
14 words
The method according to claim 12, wherein the rare gas ions are argon plasma.
Claim 18
Dependent Claim
51 words
The method according to claim 11, further comprising the step of carrying out an oxygen plasma treatment on the silylated layer of each of the exposed portions of the organic resin layer, after the step of etching the whole surface of the organic resin layer to remove the silicon absorbed layers.
References Cited (Backward Citations)
DE3541451A1
Cited
EP0291670A1
Cited
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