Patent US5217564A successfully refreshed from Google Patents.
US5217564A
Expired / Lapsed
US
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Method of producing sheets of crystalline material and devices made therefrom
Assignee: Massachusetts Institute of Technology
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Filing: 1992-03-02
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Granted: 1993-06-08
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Expires: 2012-03-02
Abstract
Abstract A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline mate GOVERNMENT SUPPORT Work described herein was supported by the U.S. Air Force.
Inventors
- 👤 Carl O. Bozler
- 👤 John C. C. Fan
- 👤 Robert W. McClelland
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 20:07
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/14; H10F10/142; C; C30; C30B; C30B25/00; C30B25/02; C30B25/04; C30B29/00; C30B29/60; C30B33/00; H10P; H10P14/00; H10P14/20; H10P14/27; H10P14/271; H10P14/276; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2907; H10P14/2911; H10P14/2921; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3418; H10P14/3421; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H01; H01S; H01S5/00; H01S5/02; H01S5/0206; H01S5/0207; H01S5/0217; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y10; Y10S; Y10S117/00; Y10S117/915; Y10S438/00; Y10S438/977; Y10S438/98
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
98 words
A process for producing a region of single crystal silicon overlying a region of dielectric material comprising the steps of: a. forming a region of non-single crystal silicon material which overlies said region of dielectric material and which overlies and is in contact with a region of single crystal silicon; and b. converting said non-single crystal silicon region into said region of single crystal silicon by heating said non-single crystal silicon region with hear from a source to simultaneously melt the entire non-single crystal material and cooling the melted material to form the region of single crystal silicon.
Claim 2
Dependent Claim
98 words
A process for producing a region of single crystal silicon overlying a region of dielectric material comprising the steps of: a. forming a region of non-single crystal silicon material which overlies said region of dielectric material and which overlies and is in contact with a region of single crystal silicon; and b. converting said non-single crystal silicon region into said region of single crystal silicon by heating said non-single crystal silicon region with hear from a source to simultaneously melt the entire non-single crystal material and cooling the melted material to form the region of single crystal silicon.
Claim 3
Dependent Claim
14 words
The process of claim 1 wherein the dielectric material is an oxide of silicon.
Claim 4
Dependent Claim
21 words
The process of claim 2 wherein in step (b) the non-single crystal silicon regions are melted by the heat and crystallized.
Claim 5
Dependent Claim
24 words
The process of claim 3 wherein the single crystal region is converted by single crystal growth initiated from the region of single crystal silicon.
Claim 6
Dependent Claim
104 words
A process for producing a region of substantially single crystal semiconductor material overlying a region of dielectric material comprising the steps of: a. forming a region of non-single crystal semiconductor material which both overlies said region of dielectric material and which is in contact with a region of single crystal semiconductor material; and b. converting said non-single crystal semiconductor region into substantially single crystal semiconductor material by exposing the non-single crystal semiconductor region to hear from a plurality of heat sources to simultaneously melt the entire region of non-single crystal material and subsequently cooling the melted region to form the substantially single crystal region.
Claim 7
Dependent Claim
104 words
A process for producing a region of substantially single crystal semiconductor material overlying a region of dielectric material comprising the steps of: a. forming a region of non-single crystal semiconductor material which both overlies said region of dielectric material and which is in contact with a region of single crystal semiconductor material; and b. converting said non-single crystal semiconductor region into substantially single crystal semiconductor material by exposing the non-single crystal semiconductor region to hear from a plurality of heat sources to simultaneously melt the entire region of non-single crystal material and subsequently cooling the melted region to form the substantially single crystal region.
Claim 8
Dependent Claim
21 words
The process according to claim 5 wherein the dielectric material comprises an oxide of silicon and the semiconductor material comprises silicon.
Claim 9
Dependent Claim
19 words
The process according to claim 6 wherein the non-single crystal semiconductor region is melted by the heat and crystallized.
Claim 10
Dependent Claim
30 words
The process according to claim 7 wherein melting of the non-single crystal semiconductor region is produced by heat from a laser beam, an electron beam or a radiant energy heater.
Claim 11
Dependent Claim
26 words
The process according to claim 8 wherein the non-single crystal region is converted by single crystal growth initiated from the region of single crystal semiconductor material.
Claim 12
Dependent Claim
40 words
The process according to claim 5 wherein the semiconductor material is an element of Group IV of the Periodic Classification of the elements and the non-single crystal material is in contact with the said region of single crystal semiconductor material.
Claim 13
Dependent Claim
20 words
A method according to claim 1 including an additional step of fabricating a device from the single crystal semiconductor material.
Claim 14
Dependent Claim
36 words
A method according to claim 1 wherein the non-single crystal material is deposited on the dielectric material in the presence of selected impurity dopants to form layers of different conductivity type in the single crystal material.
Claim 15
Dependent Claim
41 words
A method according to claim 1 wherein plural sheets of single-crystal material are formed and are bonded together by an electrically insulating or electrically conducting layer to form a device in which the sheets are electrically decoupled or electrically connected, respectively.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-06-07 | 1996-12-07 | 1997-06-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-06-07 | 2000-12-07 | 2001-06-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-06-07 | 2004-12-07 | 2005-06-08 | $7700.00 | Window Closed / Lapsed |