Patent US4184901A successfully refreshed from Google Patents.
Patent US5202283A successfully refreshed from Google Patents.
US5202283A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Technique for doping MOCVD grown crystalline materials using free radical transport of the dopant species
Assignee: Boeing Co
•
Filing: 1991-02-19
•
Granted: 1993-04-13
•
Expires: 2011-02-19
Abstract
Abstract Method for organic free radical, including aliphatic radical, transport of dopant species for precise, predetermined, and reproducible doping concentrations to control electrical properties for chemical vapor deposition grown materials.
Inventors
- 👤 Charles R. Younger
- 👤 Kenneth L. Hess
- 👤 Stuart J. C. Irvine
- 👤 Edward R. Gertner
- 👤 Shawn L. Johnston
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:59
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3224; H10P14/3232; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3412; H10P14/3414; H10P14/3418; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y10; Y10S; Y10S148/00; Y10S148/11; Y10S438/00; Y10S438/914; Y10S438/925
Claims Analysis
Total Claims: 44
Claim 1
Independent Claim
93 words
A method for precisely and reproducibly establishing predetermined levels of dopant species in a semiconductor material being formed by chemical vapor deposition, comprising the steps of: heating a source of dopant species in a chamber; locating a substrate in the chamber for heating in spaced apart relation to said source; introducing into said chamber an organic gas mixture characterized by: 1. being a precursor to a semiconductor material to be deposited on said substrate, and 2. being a precursor to free organic radicals combinable with the dopant species for transport to the substrate.
Claim 2
Independent Claim
93 words
A method for precisely and reproducibly establishing predetermined levels of dopant species in a semiconductor material being formed by chemical vapor deposition, comprising the steps of: heating a source of dopant species in a chamber; locating a substrate in the chamber for heating in spaced apart relation to said source; introducing into said chamber an organic gas mixture characterized by: 1. being a precursor to a semiconductor material to be deposited on said substrate, and 2. being a precursor to free organic radicals combinable with the dopant species for transport to the substrate.
Claim 3
Dependent Claim
30 words
The method of claim 1, wherein: said semiconductor organic gas mixture combines a plurality of semiconductor constituant gases, each semiconductor constituant gas including a constituent of a multiple element semiconductor.
Claim 4
Dependent Claim
13 words
The method of claim 2, wherein: the multiple element semiconductor is gallium arsenide.
Claim 5
Dependent Claim
13 words
The method of claim 2, wherein: the multiple element semiconductor is indium phosphide.
Claim 6
Dependent Claim
39 words
The method of claim 2, wherein: the multiple element semiconductor is mercury cadmium telluride, and the dopant species is one of: transition elements, an element selected from Group I, II, IV, V, VI, VII, and boron, aluminum, and gallium.
Claim 7
Independent Claim
94 words
A method for precisely and reproducibly establishing predetermined levels of dopant species in a semiconductor material being formed by metalorganic chemical vapor deposition, comprising the steps of: heating a source of dopant species in a chamber; locating a substrate in the chamber for heating in spaced apart relation to said source; introducing into said chamber metalorganic gas characterized by: 1. being a precursor to a semiconductor material to be deposited on said substrate, and 2. being a precursor to free organic radicals which are combinable with the dopant species for transport to the substrate.
Claim 8
Independent Claim
94 words
A method for precisely and reproducibly establishing predetermined levels of dopant species in a semiconductor material being formed by metalorganic chemical vapor deposition, comprising the steps of: heating a source of dopant species in a chamber; locating a substrate in the chamber for heating in spaced apart relation to said source; introducing into said chamber metalorganic gas characterized by: 1. being a precursor to a semiconductor material to be deposited on said substrate, and 2. being a precursor to free organic radicals which are combinable with the dopant species for transport to the substrate.
Claim 9
Dependent Claim
14 words
The method of claim 6, wherein: said metalorganic gas is a semiconductor organic gas.
Claim 10
Dependent Claim
29 words
The method of claim 7, wherein: said semiconductor organic gas combines a plurality of semiconductor constituant gases, each semiconductor constituant gas including a constituent of a multiple element semiconductor.
Claim 11
Dependent Claim
13 words
The method of claim 7, wherein: the multiple element semiconductor is gallium arsenide.
Claim 12
Dependent Claim
13 words
The method of claim 7, wherein: the multiple element semiconductor is indium phosphide.
Claim 13
Dependent Claim
39 words
The method of claim 7, wherein: the multiple element semiconductor is mercury cadmium telluride, and the dopant species is one of: transition elements, an element selected from Group I, II, IV, V, VI, VII, and boron, aluminum, and gallium.
Claim 14
Independent Claim
59 words
A method for precisely and reproducibly establishing predetermined levels of dopant species in semiconductor materials, comprising the steps of: heating a source of dopant in a chamber; introducing gas comprising aliphatic radicals and metal organic precursors for reaction therein to form semiconductors, and, transporting dopant species from the source by free radical transport to the semiconductor material being formed.
Claim 15
Independent Claim
59 words
A method for precisely and reproducibly establishing predetermined levels of dopant species in semiconductor materials, comprising the steps of: heating a source of dopant in a chamber; introducing gas comprising aliphatic radicals and metal organic precursors for reaction therein to form semiconductors, and, transporting dopant species from the source by free radical transport to the semiconductor material being formed.
Claim 16
Dependent Claim
30 words
The method of claim 12 wherein: said gas comprising aliphatic radicals includes any possible combination of metalorganics, which either in combination or individually can be used to form semiconductor materials.
Claim 17
Dependent Claim
29 words
The method of claim 12 wherein: said source of dopant includes any element or alloy which can be transported by free aliphatic radicals for doping in said semiconductor materials.
Claim 18
Dependent Claim
12 words
The method of claim 12, wherein: the gas further comprises metalorganic molecules.
Claim 19
Independent Claim
67 words
A method for precisely and reproducibly establishing predetermined levels of dopant species in both II-VI and III-V semiconductor materials, comprising the steps of: heating a source of dopant in a chamber; introducing gas comprising aliphatic radicals and metal organic precursors for reaction therein to form either II-VI or III-V semiconductors, and, transporting dopant species from the source by free radical transport to the semiconductor material being formed.
Claim 20
Independent Claim
67 words
A method for precisely and reproducibly establishing predetermined levels of dopant species in both II-VI and III-V semiconductor materials, comprising the steps of: heating a source of dopant in a chamber; introducing gas comprising aliphatic radicals and metal organic precursors for reaction therein to form either II-VI or III-V semiconductors, and, transporting dopant species from the source by free radical transport to the semiconductor material being formed.
Claim 21
Dependent Claim
30 words
The method of claim 16 wherein: said gas comprising aliphatic radicals includes any possible combination of metalorganics, which either in combination or individually can be used to form semiconductor materials.
Claim 22
Dependent Claim
32 words
The method of claim 16 wherein: said source of dopant includes any element or alloy which can be transported by free aliphatic radicals for doping in said II-VI or III-VI semiconductor materials.
Claim 23
Dependent Claim
12 words
The method of claim 16, wherein: the gas further comprises metalorganic molecules.
Claim 24
Independent Claim
80 words
A method of forming a doped semiconductor material on a heated substrate using metalorganic chemical vapor deposition techniques which comprises: providing a heated target of metal dopant in a chamber proximate the substrate on which said semiconductor is being deposited; and, feeding to said chamber a mixture of metalorganic gases in a carrier gas under conditions which will create gaseous metalorganic species of said metal dopant for transport of the metal dopant to said semiconductor material as it is deposited.
Claim 25
Independent Claim
80 words
A method of forming a doped semiconductor material on a heated substrate using metalorganic chemical vapor deposition techniques which comprises: providing a heated target of metal dopant in a chamber proximate the substrate on which said semiconductor is being deposited; and, feeding to said chamber a mixture of metalorganic gases in a carrier gas under conditions which will create gaseous metalorganic species of said metal dopant for transport of the metal dopant to said semiconductor material as it is deposited.
Claim 26
Dependent Claim
16 words
The method of claim 20, wherein: said substrate is gallium arsenide having a crystallographic orientation <100>10°→<110>.
Claim 27
Dependent Claim
20 words
The method of claim 20, wherein: the substrate and the dopant are heated to temperatures in the range 200°-800° C.
Claim 28
Dependent Claim
30 words
The method of claim 20, wherein: the doped semiconductor material formed is beryllium doped indium phosphide; and, the metalorganic gases comprise triethylindium, and phosphine in a carrier of hydrogen gas.
Claim 29
Dependent Claim
31 words
The method of claim 22, wherein: the doped semiconductor material is zinc doped gallium arsenide, and, the metal organic gases comprise trimethylgallium, and arsine gas in a carrier of hydrogen gas.
Claim 30
Independent Claim
60 words
The method of preparing a doped semiconductor material using metalorganic chemical vapor deposition techniques which comprises: placing in proximity to a heated substrate where the semiconductor material is being formed, a source of heated dopant material, and, carrying out the semiconductor formation under conditions which generate gaseous metalorganic species of the dopant for transport to the semiconductor substrate being formed.
Claim 31
Independent Claim
60 words
The method of preparing a doped semiconductor material using metalorganic chemical vapor deposition techniques which comprises: placing in proximity to a heated substrate where the semiconductor material is being formed, a source of heated dopant material, and, carrying out the semiconductor formation under conditions which generate gaseous metalorganic species of the dopant for transport to the semiconductor substrate being formed.
Claim 32
Independent Claim
92 words
A method for precisely and reproducibly establishing predetermined levels of dopant species in a semiconductor material being formed by chemical vapor deposition processing, comprising the steps of: heating a source of dopant species in a chamber; locating a substrate in the chamber in spaced apart relation to said source and heating said substrate; introducing into said chamber a gaseous stream feed which contains a precursor to the semiconductor to be deposited and a source of organic material which will combine with the dopant species for transport of the dopant to the substrate.
Claim 33
Independent Claim
92 words
A method for precisely and reproducibly establishing predetermined levels of dopant species in a semiconductor material being formed by chemical vapor deposition processing, comprising the steps of: heating a source of dopant species in a chamber; locating a substrate in the chamber in spaced apart relation to said source and heating said substrate; introducing into said chamber a gaseous stream feed which contains a precursor to the semiconductor to be deposited and a source of organic material which will combine with the dopant species for transport of the dopant to the substrate.
Claim 34
Dependent Claim
34 words
The method of claim 26 comprising the steps of: independently heating the substrate and the source wherein the gaseous feed includes components to form a multiple semiconductor by metal organic chemical vapor deposition techniques.
Claim 35
Dependent Claim
15 words
The method of claim 26 wherein: the gaseous stream includes elements for forming gallium arsenide.
Claim 36
Dependent Claim
15 words
The method of claim 26, wherein: the gaseous feeds includes elements for forming indium phosphide.
Claim 37
Dependent Claim
16 words
The method of claim 26, wherein: the gaseous feeds includes elements for forming mercury cadmium telluride.
Claim 38
Dependent Claim
11 words
The method of claim 28, wherein: the dopant species is zinc.
Claim 39
Dependent Claim
11 words
The method of claim 29, wherein: the dopant species is beryllium.
Claim 40
Independent Claim
103 words
A method for precisely and reproducibly establishing predetermined levels of dopant species in a semiconductor material being formed by metalorganic chemical vapor deposition comprising the steps of: heating a source of dopant species in a chamber; locating a substrate in the chamber in spaced apart relation to said source and heating the substrate; introducing into said chamber metalorganic gas which comprises: 1) a precursor for forming the semiconductor material to be deposited on said substrate using metalorganic chemical vapor deposition and; 2) a source of free organic radicals which are combinable with the dopant species for transport to the substrate of the dopant.
Claim 41
Independent Claim
103 words
A method for precisely and reproducibly establishing predetermined levels of dopant species in a semiconductor material being formed by metalorganic chemical vapor deposition comprising the steps of: heating a source of dopant species in a chamber; locating a substrate in the chamber in spaced apart relation to said source and heating the substrate; introducing into said chamber metalorganic gas which comprises: 1) a precursor for forming the semiconductor material to be deposited on said substrate using metalorganic chemical vapor deposition and; 2) a source of free organic radicals which are combinable with the dopant species for transport to the substrate of the dopant.
Claim 42
Dependent Claim
26 words
The method of claim 33, wherein: the dopant concentration transported to the semiconductor material on the substrate is controlled by varying the mass of dopant species.
Claim 43
Dependent Claim
27 words
The method of claim 33, wherein: the dopant concentration transported to the semiconductor material on the substrate is controlled by varying the heat of the dopant source.
Claim 44
Dependent Claim
33 words
The method of claim 33, wherein: the dopant concentration transported to the semiconductor material on the substrate is controlled by varying the concentration of organic free radicals in the metalorganic gas for transport.
References Cited (Backward Citations)
US3249473A
Cited
US3218203A
Cited
US3657004A
Cited
US4368098A
Cited
US4404265A
Cited
US3901746A
Cited
US4650539A
Cited
JPS59121919A
Cited
US4566918A
Cited
GB2193228A
Cited
US4782034A
Cited
JPS6422024A
Cited
US4904337A
Cited
US4904616A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-04-12 | 1996-10-12 | 1997-04-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-04-12 | 2000-10-12 | 2001-04-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-04-12 | 2004-10-12 | 2005-04-13 | $7700.00 | Window Closed / Lapsed |