US3901746A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and device for the deposition of doped semiconductors
Assignee: US Philips Corp
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Filing: 1971-03-01
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Granted: 1975-08-26
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Expires: 1991-03-01
Abstract
Abstract Method and device for depositing semiconductors by crystal growth on a substrate from the vapour phase through open tubes. A source of doping impurity is arranged outside the gas flow in which the constituents of the deposit are caused to react, whilst a non-reactive gas flow is applied to the source in the direction of the reactive gas flow so that the diffusion of the reactive vapours is checked by counterflow.
Inventors
- 👤 Andre Boucher
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:15
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45561; C30; C30B; C30B25/00; C30B25/02; C30B25/14; Y; Y10; Y10S; Y10S118/00; Y10S118/90; Y10S148/00; Y10S148/006; Y10S148/04; Y10S148/056; Y10S148/065; Y10S438/00; Y10S438/914; Y10S438/925
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
124 words
IN A METHOD OF DEPOSITING A DOPED SEMICONDUCTOR MATERIAL BY CRYSTAL GROWTH ON A SUBSTRATE BY CAUSING REACTIVE VAPORS CONTAINING THE CONSTITUENTS OF SAID SEMICONDUCTOR MATERIAL AND GIVEN DOPING IMPURITY, OBTAINED FROM A DOPANT SOURCE, TO BE DIRECTED BY A STREAM OF A CARRIER GAS TO A SUBSTRATE ARRANGED IN A REACTION VESSEL, THE IMPROVEMENT WHEREIN THE SOURCE OF SAID DOPING IMPURITY HAS A NEGLIGIBLE VAPOUR PRESSURE AT A TEMPERATURE DETERMINED BY ITS LOCATION IN THE REACTION VESSEL DURING THE DEPOSITION, SAID SOURCE IS POSITIONED UPSTREAM WITH RESPECT TO THE INLET OF REACTIVE VAPOURS IN SAID VESSEL, SAID REACTIVE VAPOURS REACH THE DOPANT SOURCE BY RETRODIFFUSION AND THE INLET OF NON-REACTIVE GAS IS POSITIONED UPSTREAM FROM THE DOPANT SOURCE WHILE A CONTROLLABLE FLOW OF
Claim 2
Dependent Claim
124 words
IN A METHOD OF DEPOSITING A DOPED SEMICONDUCTOR MATERIAL BY CRYSTAL GROWTH ON A SUBSTRATE BY CAUSING REACTIVE VAPORS CONTAINING THE CONSTITUENTS OF SAID SEMICONDUCTOR MATERIAL AND GIVEN DOPING IMPURITY, OBTAINED FROM A DOPANT SOURCE, TO BE DIRECTED BY A STREAM OF A CARRIER GAS TO A SUBSTRATE ARRANGED IN A REACTION VESSEL, THE IMPROVEMENT WHEREIN THE SOURCE OF SAID DOPING IMPURITY HAS A NEGLIGIBLE VAPOUR PRESSURE AT A TEMPERATURE DETERMINED BY ITS LOCATION IN THE REACTION VESSEL DURING THE DEPOSITION, SAID SOURCE IS POSITIONED UPSTREAM WITH RESPECT TO THE INLET OF REACTIVE VAPOURS IN SAID VESSEL, SAID REACTIVE VAPOURS REACH THE DOPANT SOURCE BY RETRODIFFUSION AND THE INLET OF NON-REACTIVE GAS IS POSITIONED UPSTREAM FROM THE DOPANT SOURCE WHILE A CONTROLLABLE FLOW OF
Claim 3
Dependent Claim
35 words
A method as claimed in claim 1, characterized in that said controllable flow of non-reactive gas limiting the diffusion of the reactive vapours towards said source of impurities is used as a carrier gas stream.
Claim 4
Dependent Claim
29 words
A method as claimed in claim 2, characterized in that the gas forming the reactive vapours fed into said vessel for the deposition reaction are reactive for said source.
Claim 5
Dependent Claim
49 words
A method as claimed in claim 3 characterized in that said deposit is epitaxial and achieved on a single-crystal substrate and in that said material comprises at least one element of the group III of the Periodical System of Elements and at least one element of the group V.
Claim 6
Dependent Claim
15 words
A method as claimed in claim 4, characterized in that said material is gallium arsenide.
Claim 7
Dependent Claim
15 words
A method as claimed in claim 5, characterized in that the doping impurity is tin.
Claim 8
Dependent Claim
15 words
A method as claimed in claim 6, characterized in that said reactive vapours contain halides.
Claim 9
Dependent Claim
15 words
A method as claimed in claim 7 characterized in that the non-reactive gas is hydrogen.
Claim 10
Dependent Claim
58 words
A method as claimed in claim 1 characterized in that a second dopant is simultaneously added with the first dopant, the source of this second dopant being different from said first source, each of said sources being disposed at different distances from the inlet point of the reactive vapors, said distances varying with the desired percentages of doping.
Claim 11
Dependent Claim
65 words
A method as claimed in claim 1 characterized in that the gases forming said reactive vapors contain a first vapor fed into said vessel for the deposition reaction and non-reactive with said source and a second vapor capable of reacting with said source said second vapor being injeCted into the vessel substantially at the same point and in the same direction as said first vapor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-08-25 | 1979-02-24 | 1979-08-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-08-25 | 1983-02-24 | 1983-08-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-08-25 | 1987-02-24 | 1987-08-26 | $7700.00 | Window Closed / Lapsed |