Thin film deposition system
Abstract
Abstract A METHOD AND APPARATUS FOR CHEMICAL VAPOR PHASE DEPOSITION OF SEMICONDUCTOR MATERIALS ON A SEMICONDUCTOR SUBSTRATE PROVIDES THE CAPABILITY FOR DEPOSITING CONTINUOUS UNIFROM FILMS OF SEMICONDUCTOR MATERIAL LESS THAN 1 MICRON THICK. A SEMICONDUCTOR SUBSTRATE ONTO WHICH A THIN FILM IS TO BE DEPOSITED IS POSITIONED AND LOCATED IN A ZONE OF NO FLOW OR STAGNATION IN A RECTOR ENCLOSURE. GASEOUS REACTANTS ARE CONTINUOUSLY SUPPLIED TO THE REACTOR AND ARE CONTINUOUSLY WITHDRAWN FROM THE REACTOR ALONG WITH BY-PRODUCTS OF THE DEPOSITION REACTION. THE REACTANTS CONTACT THE SUBSTRATE BY MOVING THROUGH THE AREA OF STAGNATION NOT BY MACROSOPIC VAPOR FLOWBUT BY MOLECULAR DIFFUSION FROM THE AREA OF FLOW THROUGH THE STAGNANT AREA TO THE SEMICONDUCTOR SUBSTRATE. THE AREA OF STAGNATION CAN ALSO BE PROVIDED WITH A BACKWASH OR FLUSHING MEANS WHICH PROVIDES A POSITION MECHANISM FOR BEGINNING AND STOPPING DIFFUSION INTO THE STAGNANT AREA, THUS CREATING A DEPOSITION PERIOD OF VERY DEFINITE LENGTH.
Inventors
- 👤 William W Gartman
- 👤 James G Evans
- 👤 Harold A Allen
Bibliographic Details
Claims Analysis
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