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US5196375A
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US
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Method for manufacturing bonded semiconductor body
Assignee: Toshiba Corp
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Filing: 1991-07-29
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Granted: 1993-03-23
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Expires: 2011-07-29
Abstract
Abstract A method for manufacturing a bonded semiconductor body including contacting the flat mirror surfaces of semiconductor substrate wafers used as semiconductor element substrates, and subjecting the adhered semiconductor substrate wafers to a heat treatment at a temperature higher than 200° C. and lower than the melting point of the semiconductor substrate wafers to bond the mirror surfaces. The surface roughness of each of the mirror surfaces of the semiconductor substrate wafers is set not more than 130 Å at its maximum value when measured in a range of 1 mm on a reference plane provided in a predetermined area of the mirror surface.
Inventors
- 👤 Tadahide Hoshi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:52
CPC Classifications
H; H10; H10P; H10P10/00; H10P10/12; H10P10/128; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/017; Y10S148/135
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
129 words
A method for manufacturing a bonded semiconductor body, said method comprising the steps of: preparing a predetermined number of silicon substrates each with a predetermined diameter, resistivity, and total thickness variation, and with a surface roughness within 30 Å to 280 Å in a range of 1 mm length; bringing flat mirror surfaces of the semiconductor substrates together in close contact in pairs at a bonding interface of each pair; subjecting each of said semiconductor substrates to infrared topography to detect images corresponding to voids on said bonding interface; and selecting pairs of semiconductor substrates in which no images appeared, each said semiconductor substrate of said pair thereby having a flat mirror surface with a surface roughness of less than 130 Å in a range of 1 mm length.
Claim 2
Independent Claim
129 words
A method for manufacturing a bonded semiconductor body, said method comprising the steps of: preparing a predetermined number of silicon substrates each with a predetermined diameter, resistivity, and total thickness variation, and with a surface roughness within 30 Å to 280 Å in a range of 1 mm length; bringing flat mirror surfaces of the semiconductor substrates together in close contact in pairs at a bonding interface of each pair; subjecting each of said semiconductor substrates to infrared topography to detect images corresponding to voids on said bonding interface; and selecting pairs of semiconductor substrates in which no images appeared, each said semiconductor substrate of said pair thereby having a flat mirror surface with a surface roughness of less than 130 Å in a range of 1 mm length.
Claim 3
Dependent Claim
30 words
A method according to claim 1, wherein the total thickness variation of said first and second semiconductor substrates is set less than 5 μm on the entire contacted surface thereof.
Claim 4
Dependent Claim
28 words
A method according to claim 1, wherein said first semiconductor substrate is formed of a material selected from a group essentially consisting of Si, Ge, InP, and GaP.
Claim 5
Dependent Claim
27 words
A method according to claim 3, wherein said second semiconductor substrate is formed of material selected from a group essentially consisting of Si, Ge, InP, and GaP.
Claim 6
Dependent Claim
31 words
A method according to claim 1, wherein said predetermined temperature is equal to or higher than 200° C. and lower than the melting point of said first and second semiconductor substrates.
Claim 7
Dependent Claim
18 words
A method according to claim 5, wherein said selected period of time is longer than about 2 hours.
Claim 8
Dependent Claim
15 words
A method according to claim 5, wherein said predetermined atmosphere is provided by nitrogen gas.
Claim 9
Independent Claim
116 words
A method for manufacturing a bonded semiconductor body, said method comprising the steps of: preparing a predetermined number of silicon substrate wafers each with a predetermined diameter, resistivity, and total thickness variation, and with a surface roughness within 30 Å to 280 Å in a range of 1 mm length; bonding flat mirror surfaces of the semiconductor substrate wafers used as semiconductor element substrates; subjecting said contacted mirror surfaces to infrared topography to detect images corresponding to voids on said contacted mirror surfaces; and selecting ones of said semiconductor substrate wafers in which no images appeared, each selected wafer thereby having a surface roughness of less than 130 Å in a range of 1 mm length.
Claim 10
Independent Claim
116 words
A method for manufacturing a bonded semiconductor body, said method comprising the steps of: preparing a predetermined number of silicon substrate wafers each with a predetermined diameter, resistivity, and total thickness variation, and with a surface roughness within 30 Å to 280 Å in a range of 1 mm length; bonding flat mirror surfaces of the semiconductor substrate wafers used as semiconductor element substrates; subjecting said contacted mirror surfaces to infrared topography to detect images corresponding to voids on said contacted mirror surfaces; and selecting ones of said semiconductor substrate wafers in which no images appeared, each selected wafer thereby having a surface roughness of less than 130 Å in a range of 1 mm length.
Claim 11
Independent Claim
121 words
A method for manufacturing a bonded semiconductor body, said method comprising the steps of: preparing a predetermined number of silicon wafers each with a predetermined diameter, resistivity, and total thickness variation, and with a surface roughness within 30 Å to 280 Å in a range of 1 mm length; bonding flat mirror surfaces of pairs of said silicon wafers at a bonding interface of each pair; subjecting each said bonding interface to infrared topography to detect images corresponding to voids on each said bonding interface of the pairs of silicon wafers; and selecting silicon wafers having no images and thereby having a flat mirror surface with a surface roughness of less than 130 Å in a range of 1 mm length.
Claim 12
Independent Claim
121 words
A method for manufacturing a bonded semiconductor body, said method comprising the steps of: preparing a predetermined number of silicon wafers each with a predetermined diameter, resistivity, and total thickness variation, and with a surface roughness within 30 Å to 280 Å in a range of 1 mm length; bonding flat mirror surfaces of pairs of said silicon wafers at a bonding interface of each pair; subjecting each said bonding interface to infrared topography to detect images corresponding to voids on each said bonding interface of the pairs of silicon wafers; and selecting silicon wafers having no images and thereby having a flat mirror surface with a surface roughness of less than 130 Å in a range of 1 mm length.
Claim 13
Dependent Claim
41 words
A method according to claim 9 wherein the first and second semiconductor substrates selected from the predetermined number of silicon wafers are selected to have a surface roughness of between 70 and 80 Å in a range of 1 mm length.
Claim 14
Dependent Claim
28 words
A method according to claim 10 wherein the predetermined number of silicon wafers are formed of material from a group consisting essentially of Ge, GaAs, InP, and GaP.
Claim 15
Dependent Claim
13 words
A method according to claim 9 wherein the predetermined diameter if 100 mm.
Claim 16
Dependent Claim
19 words
A method according to claim 12 wherein the predetermined resistivity is within the range of 20 to 30 Ω·cm.
Claim 17
Dependent Claim
17 words
A method according to claim 9 wherein the predetermined total thickness variation is less than 5 μm.
Claim 18
Independent Claim
153 words
A method for manufacturing a bonded semiconductor body, said method comprising the steps of: preparing a predetermined number of semiconductor substrates each with a predetermined diameter, resistivity, and total thickness variation, and with a surface roughness within 30 Å to 280 Å in a range of 1 mm length; bringing flat mirror surfaces of the semiconductor substrates together in close contact in pairs at a bonding interface of each pair; subjecting said pairs to infrared topography to detect images corresponding to voids on said bonding interfaces; selecting said pairs in which no images appeared, each of said semiconductor substrates of said selected pairs thereby having a flat mirror surface with a surface roughness of less than 130 Å in a range of 1 mm length; and subjecting each of said semiconductor substrates of said pairs to a heat treatment at a predetermined temperature for a selected period of time in a predetermined atmosphere.
Claim 19
Independent Claim
153 words
A method for manufacturing a bonded semiconductor body, said method comprising the steps of: preparing a predetermined number of semiconductor substrates each with a predetermined diameter, resistivity, and total thickness variation, and with a surface roughness within 30 Å to 280 Å in a range of 1 mm length; bringing flat mirror surfaces of the semiconductor substrates together in close contact in pairs at a bonding interface of each pair; subjecting said pairs to infrared topography to detect images corresponding to voids on said bonding interfaces; selecting said pairs in which no images appeared, each of said semiconductor substrates of said selected pairs thereby having a flat mirror surface with a surface roughness of less than 130 Å in a range of 1 mm length; and subjecting each of said semiconductor substrates of said pairs to a heat treatment at a predetermined temperature for a selected period of time in a predetermined atmosphere.
Claim 20
Independent Claim
153 words
A method for manufacturing a bonded semiconductor body, said method comprising the steps of: preparing a predetermined number of silicon substrate wafers each with a predetermined diameter, resistivity, and total thickness variation, and with a surface roughness within 30 Å to 280 Å in a range of 1 mm length; bonding flat mirror surfaces of the semiconductor substrate wafers used as semiconductor element substrates in pairs; subjecting said bonded mirror surfaces to infrared topography to detect images corresponding to voids on said bonded mirror surfaces; selecting ones of said semiconductor substrate wafers in which no images appeared and thereby having a surface roughness of less than 130 Å in a range of 1 mm length; and subjecting said pairs of semiconductor substrate wafers to a heat treatment at a temperature higher than substantially 200° C. and lower than the melting point of said semiconductor substrate wafers to further bond the mirror surfaces together.
Claim 21
Independent Claim
153 words
A method for manufacturing a bonded semiconductor body, said method comprising the steps of: preparing a predetermined number of silicon substrate wafers each with a predetermined diameter, resistivity, and total thickness variation, and with a surface roughness within 30 Å to 280 Å in a range of 1 mm length; bonding flat mirror surfaces of the semiconductor substrate wafers used as semiconductor element substrates in pairs; subjecting said bonded mirror surfaces to infrared topography to detect images corresponding to voids on said bonded mirror surfaces; selecting ones of said semiconductor substrate wafers in which no images appeared and thereby having a surface roughness of less than 130 Å in a range of 1 mm length; and subjecting said pairs of semiconductor substrate wafers to a heat treatment at a temperature higher than substantially 200° C. and lower than the melting point of said semiconductor substrate wafers to further bond the mirror surfaces together.
Claim 22
Independent Claim
143 words
A method for manufacturing a bonded semiconductor body, said method comprising the steps of: preparing a predetermined number of silicon wafers each with a predetermined diameter, resistivity, and total thickness variation, and with a surface roughness within 30 Å to 280 Å in a range of 1 mm length; bonding flat mirror surfaces of pairs of said silicon wafers at a bonding interface of each pair; subjecting each said bonding interface to infrared topography to detect images corresponding to voids on each said bonding interface of the pairs of silicon wafers; selecting said silicon wafers having no images and thereby having a flat mirror surface with a surface roughness of less than 130 Å in a range of 1 mm length; and subjecting each said pair to heat treatment at a predetermined temperature for a selected period of time in a predetermined atmosphere.
Claim 23
Independent Claim
143 words
A method for manufacturing a bonded semiconductor body, said method comprising the steps of: preparing a predetermined number of silicon wafers each with a predetermined diameter, resistivity, and total thickness variation, and with a surface roughness within 30 Å to 280 Å in a range of 1 mm length; bonding flat mirror surfaces of pairs of said silicon wafers at a bonding interface of each pair; subjecting each said bonding interface to infrared topography to detect images corresponding to voids on each said bonding interface of the pairs of silicon wafers; selecting said silicon wafers having no images and thereby having a flat mirror surface with a surface roughness of less than 130 Å in a range of 1 mm length; and subjecting each said pair to heat treatment at a predetermined temperature for a selected period of time in a predetermined atmosphere.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-03-22 | 1996-09-21 | 1997-03-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-03-22 | 2000-09-21 | 2001-03-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-03-22 | 2004-09-21 | 2005-03-23 | $7700.00 | Window Closed / Lapsed |