EP0190508A2
Expired / Lapsed
EP
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Method of manufacturing compound semiconductor apparatus
Assignee: Toshiba Corp
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Filing: 1985-12-23
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Granted: —
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Expires: 2005-12-23
Abstract
Abstract A method of manufacturing a compound semiconductor device has the steps of mirror-polishing a surface of each of two compound semiconductor substrates (11, 12), bringing the mirror-polished surfaces of the two compound semiconductor substrates (11, 12) in contact with each other in a clean atmosphere and in a state wherein substantially no foreign substances are present therebetween, and annealing the compound semiconductor substrates (11, 12) which are in contact with each other so as to provide a bonded structure having a junction with excellent electrical characteristics at the interface.
Inventors
- 👤 Masaru C/O Patent Division Shimbo
- 👤 Hiromichi C/O Patent Division Ohashi
- 👤 Kazuyoshi C/O Patent Division Furukawa
- 👤 Kiyoshi C/O Patent Division Fukuda
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 16:29
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/15; H10P10/00; H10P10/12; H10P10/128; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/159
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
79 words
A method of manufacturing a compound semiconductor device, comprising the steps of: mirror-polishing a surface of each of two compound semiconductor substrates (11, 12); bringing the mirror-polished surfaces of the two compound semiconductor substrates (11, 12) in contact with each other in a clean atmosphere and in a state wherein substantially no foreign substances are present therebetween; and annealing the compound semiconductor substrates (11, 12) which are in contact with each other so as to provide a bonded structure.
Claim 2
Independent Claim
79 words
A method of manufacturing a compound semiconductor device, comprising the steps of: mirror-polishing a surface of each of two compound semiconductor substrates (11, 12); bringing the mirror-polished surfaces of the two compound semiconductor substrates (11, 12) in contact with each other in a clean atmosphere and in a state wherein substantially no foreign substances are present therebetween; and annealing the compound semiconductor substrates (11, 12) which are in contact with each other so as to provide a bonded structure.
Claim 3
Dependent Claim
21 words
A method according to claim 1, characterized in that the compound semiconductor substrates (11, 12) comprise compound semiconductors of different types.
Claim 4
Dependent Claim
30 words
A method according to claim 2, characterized in that a combination of the compound semiconductors is a member selected from the group consisting of GaAs/InP, ZnS/GaAs, InP/InSb, GaP/InP and CdS/InP.
Claim 5
Dependent Claim
23 words
A method according to claim 1, characterized in that the compound semiconductor substrates (41, 42) comprise a compound semiconductor of the same type.
Claim 6
Dependent Claim
24 words
A method according to claim 4, characterized in that the compound semiconductor is a member selected from the group consisting of GaAs and InP.
Claim 7
Dependent Claim
30 words
A method according to claim 1, characterized in that the compound semiconductor substrates (11, 12) have different conductivity types, and a pn junction is formed at a bonded interface thereof.
Claim 8
Dependent Claim
16 words
A method according to claim 6, characterized in that the compound semiconductor device comprises a diode.
Claim 9
Dependent Claim
73 words
A method according to claim 1, characterized in that the compound semiconductor substrates (41, 44) have the same conductivity types, an impurity region (43) having a conductivity type opposite that of the substrates (41, 44) is formed on a part of the polished surface of the one of the two substrates (41, 44), and a pn junction is formed at an interface of the impurity region and another of the substrates (41, 44).
Claim 10
Dependent Claim
21 words
A method according to claim 1, characterized in that the mirror-polished surfaces have a roughness of not more than 500 A.
Claim 11
Dependent Claim
17 words
A method according to claim 1, characterized by further comprising the step of cleaning the mirror-polished surfaces.
Claim 12
Dependent Claim
32 words
A method according to claim 1, characterized in that the substrates (11, 12) are annealed at a temperature of not less than 200°C, but below the melting point of the compound semiconductors.
Claim 13
Dependent Claim
22 words
A method according to claim 11, characterized in that the substrates (11, 12) are annealed at a temperature of 300 to 600°C.
References Cited (Backward Citations)
No citation records indexed.
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