US4738935A
Expired / Lapsed
US
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Method of manufacturing compound semiconductor apparatus
Assignee: Toshiba Corp
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Filing: 1985-12-16
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Granted: 1988-04-19
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Expires: 2005-12-16
Abstract
Abstract A method of manufacturing a compound semiconductor device has the steps of mirror-polishing a surface of each of two compound semiconductor substrates, bringing the mirror-polished surfaces of the two compound semiconductor substrates in contact with each other in a clean atmosphere and in a state wherein substantially no foreign substances are present therebetween, and annealing the compound semiconductor substrates which are in contact with each other so as to provide a bonded structure having a junction with excellent electrical characteristics at the interface.
Inventors
- 👤 Masaru Shimbo
- 👤 Hiromichi Ohashi
- 👤 Kazuyoshi Furukawa
- 👤 Kiyoshi Fukuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 10:05
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/15; H10P10/00; H10P10/12; H10P10/128; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/159
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
97 words
A method of manufacturing a compound semiconductor device, comprising the steps of: mirror-polishing a surface of each of two compound semiconductor substrates; bringing the mirror-polished surfaces of the two compound semiconductor substrates in contact with each other in a clean atmosphere and in a state wherein substantially no foreign substances are present therebetween; and annealing the compound semiconductor substrates which are in contact with each other under a reducing or inert atmosphere at a temperature of not less than 200° C. but below the melting point of the compound semiconductors so as to provide a bonded structure.
Claim 2
Independent Claim
97 words
A method of manufacturing a compound semiconductor device, comprising the steps of: mirror-polishing a surface of each of two compound semiconductor substrates; bringing the mirror-polished surfaces of the two compound semiconductor substrates in contact with each other in a clean atmosphere and in a state wherein substantially no foreign substances are present therebetween; and annealing the compound semiconductor substrates which are in contact with each other under a reducing or inert atmosphere at a temperature of not less than 200° C. but below the melting point of the compound semiconductors so as to provide a bonded structure.
Claim 3
Dependent Claim
17 words
The method according to claim 1, wherein the compound semiconductor substrates comprise compound semiconductors of different types.
Claim 4
Dependent Claim
28 words
The method according to claim 2, wherein a combination of the compound semiconductors is a member selected from the group consisting of GaAs/InP, ZnS/GaAs, InP/InSb, GaP/InP and CdS/InP.
Claim 5
Dependent Claim
19 words
The method according to claim 1, wherein the compound semiconductor substrates comprise a compound semiconductor of the same type.
Claim 6
Dependent Claim
22 words
The method according to claim 4, wherein the compound semiconductor is a member selected from the group consisting of GaAs and InP.
Claim 7
Dependent Claim
26 words
The method according to claim 1, wherein the compound semiconductor substrates have different conductivity types, and a pn junction is formed at the bonded interface thereof.
Claim 8
Dependent Claim
14 words
The method according to claim 6, wherein the compound semiconductor device comprises a diode.
Claim 9
Dependent Claim
63 words
The method according to claim 1, wherein the compound semiconductor substrates have the same conductivity types, an impurity region having an opposite conductivity type to that of the substrates is formed on a part of the polished surface of the one of the two substrates, and a pn junction is formed at an interface of the impurity region and another of the substrates.
Claim 10
Dependent Claim
19 words
The method according to claim 1, wherein the mirror-polished surfaces have a roughness of not more than 500 Å.
Claim 11
Dependent Claim
19 words
The method according to claim 1, wherein the substrates are annealed at a temperature of 300° to 600° C.
Claim 12
Dependent Claim
20 words
The method according to claim 1, which further comprises cleaning said mirror-polished surfaces before said surfaces are brought into contact.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-04-19 | 1991-10-19 | 1992-04-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-04-19 | 1995-10-19 | 1996-04-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-04-19 | 1999-10-19 | 2000-04-19 | $7700.00 | Window Closed / Lapsed |