Bipolar transistor with a plurality of parallelly connected base-collector junctions formed by plastic deformation of the crystal lattice

Claim 2

A bipolar transistor having a collector-base p/n junction produced by means of plastic deformation comprising: a p-doped and an n-doped monocrystalline semiconductor plate, disc or chip; both semiconductor plates, discs or chips have a structure comprising parallel ridges on one main face; one semiconductor disc forms a base region and contains an opposite conductivity type emitter region on its opposite main face so as to form an emitter-base p/n junction; the side surfaces of the ridges in the other semiconductor plate, disc or chip have a highly doped surface layer with the type of conductivity of the base region; both semiconductor discs are assembled, by mechanical pressure, so that the ridges of the structured faces of both plates, discs or chips cross and touch; and the surfaces of said ridges which are in contact are connected together and form electrically parallel base-collector p/n junctions of equal area as a result of plastic deformation of the semiconductor lattice.

Claim 3

A bipolar transistor as defined in claim 1, wherein said ridges taper towards the free outer surface.

Claim 4

A bipolar transistor as defined in claim 1, and comprising an ohmic contact for each of said two semiconductor plates, discs or chips on the main face the opposite the respective said one main face.

Claim 5

A bipolar transistor as defined in claim 1, and comprising a metallization on the highly doped surface layer on the side surfaces of said ridges.

Claim 6

A bipolar transistor as defined in claim 4, wherein the metal used for the purpose of said metallization is selected from the group consisting of tungsten, tantalum, molybdenum, platinum, palladium, chromium and titanium.

Claim 7

A bipolar transistor as defined in claim 1, and comprising a material selected from the group consisting of silicon, germanium or III/V-compounds as the material for said semiconductor plates, discs or chips.

Claim 8

A bipolar transistor as defined in claim 1 wherein the grooves between said ridges on said one surface of said one semiconductor disc extend through said emitter-base p/n junction.

Claim 9

A bipolar transistor as defined in claim 1 wherein said highly doped surface layer extends to the free outer surface of said ridges whereby said surface layer contacts said ridges on said one of said discs, and hence the base region of the transistor.

Claim 10

A bipolar transistor as defined in claim 1 wherein said parallel ridges on said one disc intersect said parallel ridges on said other disc at an angle of 90°.

Claim 11

A bipolar transistor comprising first and second monocrystalline discs of one conductivity type and including the emitter zone and the collector zone, respectively; said first semiconductor disc having an opposite conductivity type base zone layer on one major surface with said layer forming a base-emiter p/n junction within said emitter zone within said first semiconductor disc; an arrangement of parallel extending grooves formed in said one major surface of said first disc and in one major surface of said second disc, and defining parallel extending ridges therebetween; a highly doped surface layer of the conductivity type of said base zone on the side surfaces of said ridges on said second semiconductor disc; said first and second semiconductor discs are arranged such that said ridges on one of said discs intersect said ridges on the other of said discs and contact one another at said major surfaces of said discs; and said first and second discs are connected together at the points of contact of said ridges due to plastic deformation of the semiconductor lattice and form parallel connected base-collector p/n junctions of equal surface area.

Claim 12

A bipolar transistor comprising first and second monocrystalline discs of one conductivity type and including the emitter zone and the collector zone, respectively; said first semiconductor disc having an opposite conductivity type base zone layer on one major surface with said layer forming a base-emiter p/n junction within said emitter zone within said first semiconductor disc; an arrangement of parallel extending grooves formed in said one major surface of said first disc and in one major surface of said second disc, and defining parallel extending ridges therebetween; a highly doped surface layer of the conductivity type of said base zone on the side surfaces of said ridges on said second semiconductor disc; said first and second semiconductor discs are arranged such that said ridges on one of said discs intersect said ridges on the other of said discs and contact one another at said major surfaces of said discs; and said first and second discs are connected together at the points of contact of said ridges due to plastic deformation of the semiconductor lattice and form parallel connected base-collector p/n junctions of equal surface area.

Claim 13

A bipolar transistor as defined in claim 10 wherein said grooves extend through said emitter-base p/n junction.

Claim 14

A bipolar transistor as defined in claim 10 further comprising a respective ohmic metal contact on the opposite major surface of each of said semiconductor discs, and an ohmic metal contact on said highly doped surface layer and within said grooves of said second semiconductor disc.

Claim 15

A bipolar transistor as defined in claim 12 wherein said ridges taper toward the respective said one major surface of said discs.

Claim 16

A bipolar transistor as defined in claim 10 wherein: said base zone layer is an epitaxial layer; an epitaxial layer is provided on said one major surface of said second semiconductor disc and said ridges are located, at least on one said semiconductor disc within the respective said epitaxial layer.

Claim 17

A bipolar transistor as defined in claim 14, wherein said transistor comprises a high frequency bipolar transistor.