Patent US5169680A successfully refreshed from Google Patents.
US5169680A
Expired / Lapsed
US
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Electroless deposition for IC fabrication
Assignee: Intel Corp
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Filing: 1992-03-11
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Granted: 1992-12-08
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Expires: 2012-03-11
Abstract
Abstract Electroless deposition of a conducting material on an underlying conductive region is used in a fabrication of a semiconductor device. Electroless deposition provides a selective and an additive process for forming conductive layers, filling window and providing interconnections and terminals. The conducting material is selectively deposited on a catalytic underlying surface. When the underlying surface is not catalytic, an activation step is used to cause the surface to be catalytic. Where the base underlying surface is a substrate, a contact region is formed on the substrate for electroless deposition of the conducting material.
Inventors
- 👤 Chiu H. Ting
- 👤 Milan Paunovic
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:06
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10P; H10P14/00; H10P14/40; H10P14/46; H10W20/057
Claims Analysis
Total Claims: 54
Claim 1
Independent Claim
136 words
In the fabrication of integrated circuits, a process for selectively depositing a conductive material on a semiconductor substrate, wherein said semiconductor substrate is selected from the group consisting of silicon and any Class III-V semiconductor, comprising the steps of: depositing a dielectric layer on said substrate; forming a contact opening in said dielectric layer to expose said substrate; activating said exposed substrate for electroless deposition; selectively depositing a contact filling material onto said activated exposed substrate in said contact opening by electroless deposition until a predetermined level is reached such that a substantially planarized surface is formed by said dielectric layer and said contact filling material filled in said contact opening; depositing a conducting layer over said contact filing material such that said contact filing material provides an interconnection between said substrate and said conducting layer.
Claim 2
Dependent Claim
136 words
In the fabrication of integrated circuits, a process for selectively depositing a conductive material on a semiconductor substrate, wherein said semiconductor substrate is selected from the group consisting of silicon and any Class III-V semiconductor, comprising the steps of: depositing a dielectric layer on said substrate; forming a contact opening in said dielectric layer to expose said substrate; activating said exposed substrate for electroless deposition; selectively depositing a contact filling material onto said activated exposed substrate in said contact opening by electroless deposition until a predetermined level is reached such that a substantially planarized surface is formed by said dielectric layer and said contact filling material filled in said contact opening; depositing a conducting layer over said contact filing material such that said contact filing material provides an interconnection between said substrate and said conducting layer.
Claim 3
Dependent Claim
21 words
The process of claim 1 wherein said contact filling material is selected from the group consisting of nickel, palladium and cobalt.
Claim 4
Dependent Claim
32 words
The process of claim 1 wherein said electroless deposition is performed in a solution containing a reducing agent selected from the group consisting of hypophosphite, borohydride, dimethylamine-borane, formaldehyde, dialkylamine borane, and hydrazine.
Claim 5
Dependent Claim
11 words
The process of claim 1 wherein said layer comprises an oxide.
Claim 6
Dependent Claim
24 words
The process of claim 1 wherein said activating step comprises etching said substrate in a mixture comprising HF, HNO 3 and H 2 O.
Claim 7
Dependent Claim
24 words
The process of claim 3 wherein said activating step comprises etching said substrate in a mixture comprising HF, HNO 3 and H 2 O.
Claim 8
Dependent Claim
30 words
The process of claim 1 further including the step of depositing a contact metal on said substrate after forming said contact opening in said dielectric layer and exposing said substrate.
Claim 9
Dependent Claim
20 words
The process of claim 7 wherein said contact metal is selected from the group consisting of aluminum, titanium, and tungsten.
Claim 10
Dependent Claim
16 words
The process of claim 7 wherein said contact metal forms a silicide surface with said substrate.
Claim 11
Dependent Claim
23 words
The process of claim 1 further including the step of depositing a barrier metal on said contact metal prior to said electroless deposition.
Claim 12
Dependent Claim
19 words
The process of claim 10 wherein said barrier metal is selected from the group consisting of titanium and tungsten.
Claim 13
Dependent Claim
17 words
The process of claim 10 wherein said barrier metal reacts with said substrate to form a silicide.
Claim 14
Dependent Claim
18 words
The process of claim 10 wherein said barrier metal reacts with a gas ambient to form a nitride.
Claim 15
Dependent Claim
20 words
The process of claim 1 further including the step of depositing an adhesion layer prior to depositing said conducting layer.
Claim 16
Dependent Claim
124 words
In the fabrication of integrated circuits, a process for providing selective electroless deposition of a conducting material on an underlying surface, comprising the steps of: forming a contact layer on said underlying surface; masking said contact layer to expose portions of said contact layer; activating the surface of said exposed portions of said contact layer by using an activation agent to form an electrochemically activated contact layer surface when the surface of said contact layer is electrochemically inactive; depositing selectively by electroless deposition said conducting material on said electrochemically activated contact layer surface, wherein said conducting material is only deposited on said electrochemically activated contact layer surface, wherein said conducting material deposited on said contact layer forms an interconnection line on said underlying surface.
Claim 17
Dependent Claim
124 words
In the fabrication of integrated circuits, a process for providing selective electroless deposition of a conducting material on an underlying surface, comprising the steps of: forming a contact layer on said underlying surface; masking said contact layer to expose portions of said contact layer; activating the surface of said exposed portions of said contact layer by using an activation agent to form an electrochemically activated contact layer surface when the surface of said contact layer is electrochemically inactive; depositing selectively by electroless deposition said conducting material on said electrochemically activated contact layer surface, wherein said conducting material is only deposited on said electrochemically activated contact layer surface, wherein said conducting material deposited on said contact layer forms an interconnection line on said underlying surface.
Claim 18
Dependent Claim
30 words
The process of claim 15, further comprising the step of promoting adhesion on said exposed portions of said contact layer by using an etchant prior to activating said contact layer.
Claim 19
Dependent Claim
25 words
The process of claim 16, wherein said etchant is a mixture comprising HNO 3 , HAc, H 3 PO 4 , and H 2 O.
Claim 20
Dependent Claim
22 words
The process of claim 15, wherein said conducting material is selected form the group consisting of nickel, palladium, cobalt, gold, and copper.
Claim 21
Dependent Claim
18 words
The process of claim 15 wherein said electroless deposition is performed in a solution comprising a reducing agent.
Claim 22
Dependent Claim
24 words
The process of claim 19, wherein said reducing agent is selected from the group consisting of hypophosphite, borohydride, dimethylamine-borane, formaldehyde, dialkylamine borane, and hydrazine.
Claim 23
Dependent Claim
32 words
The process of claim 17, wherein said electroless deposition is performed in a solution comprising a reducing agent selected from the group consisting of hypophosphite, borohydride, dimethylamine-borane, formaldehyde, dialkylamine borane, and hydrazine.
Claim 24
Dependent Claim
24 words
The process of claim 15, wherein said contact layer is an adhesive layer selected from a group consisting of polysilicon, aluminum, titanium, and chromium.
Claim 25
Dependent Claim
15 words
The process of claim 15 wherein said activating agent is a solution comprising palladium ions.
Claim 26
Dependent Claim
15 words
The process of claim 17 wherein said activating agent is a solution comprising palladium ions.
Claim 27
Dependent Claim
15 words
The process of claim 21 wherein said activating agent is a solution comprising palladium ions.
Claim 28
Dependent Claim
15 words
The process of claim 22 wherein said activating agent is a solution comprising palladium ions.
Claim 29
Dependent Claim
64 words
The process of claim 16, wherein (A) said contact layer is formed by sputting aluminum; (B) said adhesion is promoted by using an aluminum etchant; (C) said activating the surface of said contact layer is achieved by said activation agent wherein said activating agent is a solution comprising palladium ions and HCI; (D) said electroless deposition selectively deposits nickel on said palladium activated surface.
Claim 30
Dependent Claim
24 words
The process of claim 15 wherein said interconnection line is electrically coupled to a contact filing in a contact opening in said underlying layer.
Claim 31
Dependent Claim
24 words
The process of claim 20 wherein said interconnection line is electrically coupled to a contact filling in a contact opening in said underlying layer.
Claim 32
Dependent Claim
86 words
In a fabrication of integrated circuits, a process for providing selective electroless deposition of a conducting material on an interconnection line, comprising the steps of: forming said interconnection line on a dielectric layer, wherein said dielectric layer includes an opening filled with a conductive material, wherein said interconnection line is electrically coupled to said conductive material; etching said interconnection line with an etchant; cladding said conducting material on said interconnection line by selective electroless deposition wherein said conducting material is only deposited on said interconnection line.
Claim 33
Dependent Claim
86 words
In a fabrication of integrated circuits, a process for providing selective electroless deposition of a conducting material on an interconnection line, comprising the steps of: forming said interconnection line on a dielectric layer, wherein said dielectric layer includes an opening filled with a conductive material, wherein said interconnection line is electrically coupled to said conductive material; etching said interconnection line with an etchant; cladding said conducting material on said interconnection line by selective electroless deposition wherein said conducting material is only deposited on said interconnection line.
Claim 34
Dependent Claim
11 words
The process of claim 30, wherein said interconnection line comprises aluminum.
Claim 35
Dependent Claim
25 words
The process of claim 31, wherein said etchant is a mixture comprising HNO 3 , HAc, H 3 PO 4 , and H 2 O.
Claim 36
Dependent Claim
11 words
The process of claim 30, wherein said conducting material is copper.
Claim 37
Dependent Claim
86 words
In the fabrication of integrated circuits, a process for selectively depositing a conductive material on an underlying surface, comprising the steps of: depositing a dielectric layer on said underlying surface; forming an opening in said dielectric layer to expose said underlying surface; selectively activating said exposed underlying surface to be an electrochemically active surface for electroless deposition when said exposed underlying surface is electrochemically inactive; depositing a conductive material onto said electrochemically active surface in said opening by electroless deposition until a predetermined level is reached.
Claim 38
Dependent Claim
86 words
In the fabrication of integrated circuits, a process for selectively depositing a conductive material on an underlying surface, comprising the steps of: depositing a dielectric layer on said underlying surface; forming an opening in said dielectric layer to expose said underlying surface; selectively activating said exposed underlying surface to be an electrochemically active surface for electroless deposition when said exposed underlying surface is electrochemically inactive; depositing a conductive material onto said electrochemically active surface in said opening by electroless deposition until a predetermined level is reached.
Claim 39
Dependent Claim
34 words
The process of claim 34, further comprising the step of depositing a conducting layer over said conductive material such that said conductive material provides an interconnection between said underlying surface an said conducting layer.
Claim 40
Dependent Claim
20 words
The process of claim 35, further comprising the step of depositing an adhesion layer prior to depositing said conducting layer.
Claim 41
Dependent Claim
33 words
The process of claim 36, wherein said underlying surface is conductive, wherein said underlying surface comprises a material selected form the group consisting of aluminum, tungsten, molybdenum, nickel, palladium, cobalt, gold, and copper.
Claim 42
Dependent Claim
27 words
The process of claim 37, wherein said conducting layer comprises a material selected from the group consisting of aluminum, tungsten, molybdenum, nickel, palladium, cobalt, gold, and copper.
Claim 43
Dependent Claim
31 words
The process of claim 37 wherein said conducting layer is selectively deposited by electroless deposition and comprises a material selected from the group consisting of nickel, palladium, cobalt, gold, and copper.
Claim 44
Dependent Claim
19 words
The process of claim 34, wherein the said electroless deposition is performed in a solution comprising a reducing agent.
Claim 45
Dependent Claim
24 words
The process of claim 40, wherein said reducing agent is selected from the group consisting of hypophosphite, borohydride, dimethylamine-borane, formaldehyde, dialkylamine borane, and hydrazine.
Claim 46
Dependent Claim
24 words
The process of claim 34, wherein said conductive material comprises a material selected from the group consisting of nickel, palladium, cobalt, gold, and copper.
Claim 47
Dependent Claim
26 words
The process of claim 34, further comprising the step of promoting adhesion on said exposed underlying surface by using an etchant prior to said activating step.
Claim 48
Dependent Claim
35 words
The process of claim 34 wherein said predetermined level of said conductive material in said opening extends beyond the surface of said dielectric layer, and wherein said conductive material is used as a bonding pad.
Claim 49
Dependent Claim
35 words
The process of claim 42 wherein said predetermined level of said conductive material in said opening extends beyond the surface of said dielectric layer, sand wherein said conductive material is used as a bonding pad.
Claim 50
Dependent Claim
33 words
The process of claim 34, wherein said underlying surface is a conductive layer which is electrically coupled to said conductive material in said opening, wherein said conductive material functions as a bonding pad.
Claim 51
Dependent Claim
22 words
The process of claim 34, further including the step of depositing a adhesion layer in said opening prior to said activating step.
Claim 52
Dependent Claim
23 words
The process of claim 46, further including the step of depositing a barrier metal on said adhesion layer prior to said activating step.
Claim 53
Dependent Claim
21 words
The process of claim 46, wherein said adhesion layer comprises a material selected from the group consisting of chromium and titanium.
Claim 54
Dependent Claim
19 words
The process of claim 47, wherein said barrier metal is selected from the group consisting of copper and nickel.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-12-08 | 1996-06-08 | 1996-12-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-12-08 | 2000-06-08 | 2000-12-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-12-08 | 2004-06-08 | 2004-12-08 | $7700.00 | Window Closed / Lapsed |