Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser

Claim 2

A semiconductor device comprising a plurality of semiconductor layers formed on a support, at least one of said layers having a narrower bandgap than immediately adjacent layers thereto, a first region having impurities introduced therein and formed in a portion of said adjacent and narrow bandgap layers, said first region being an impurity induced disordered region, a second region having impurities introduced therein and formed in another portion of said adjacent and narrow bandgap layers in laterally spaced relation to said first region, and a barrier region electrically isolating said first and second regions, at least said first region of a wider bandgap than said at least one narrow bandgap layer and forming a heterojunction between at least said first region and a portion of said at least one narrow bandgap layer remaining between said first and second regions, said first and second regions doped a first conductivity type, said portion of said at least one narrow bandgap layer remaining between said first and second regions comprising at least one active region comprised of a material, and in sufficient proximity to at least one region comprised at least substantially of material of a second conductivity type, to allow for effective injection of carriers of said second conductivity type into said active region.

Claim 3

The semiconductor device of claim 1, wherein said second region is an impurity induced disordered region.

Claim 4

The semiconductor device of claim 1, further comprising means to forward bias at least one of said first and second regions to bring about stimulated light emission in said at least one active region to thereby allow said semiconductor device to be operable as a semiconductor laser.

Claim 5

The semiconductor device of claim 3, wherein one of said first and second regions is sufficiently forward biased to cause stimulated light emission in said at least one active region and means to electrically modulate the other of said first and second regions to modulate the emission properties of said semiconductor device operating as a semiconductor laser.

Claim 6

The semiconductor device of claim 4, wherein said electrically modulating means is a voltage modulating means to modulate the voltage at the other of said first and second regions to thereby selectively change the operational wavelength of said semiconductor device operating as a semiconductor laser.

Claim 7

The semiconductor device of claim 4, wherein said electrically modulating means is a current modulating means to modulate the current at the other of said first and second regions to thereby modulate the intensity of emission from said semiconductor device operating as a semiconductor laser.

Claim 8

A semiconductor device comprising a plurality of semiconductor layers formed on a support, at least one of said layers having a narrower bandgap than immediately adjacent layers thereto, a first region having impurities introduced therein and formed in a portion of said adjacent and narrow bandgap layers, said first region being an impurity induced disordered region, a second region having impurities introduced therein and formed in another portion of said adjacent and narrow bandgap layers in laterally spaced relation to said first region, and a barrier region electrically isolating said first and second regions, at least said first region of a wider bandgap than said at least one narrow bandgap layer and forming a heterojunction between said first region and a portion of said at least one narrow bandgap layer remaining between said first and second regions, said first and second regions doped a first conductivity type, said portion of said at least one narrow bandgap layer remaining between said first and second regions comprising at least one active region consisting at least substantially of material of a second conductivity type to allow for effective injection of carriers of said second conductivity type into said active region.

Claim 9

A semiconductor device comprising a plurality of semiconductor layers formed on a support, at least one of said layers having a narrower bandgap than immediately adjacent layers thereto, a first region having impurities introduced therein and formed in a portion of said adjacent and narrow bandgap layers, said first region being an impurity induced disordered region, a second region having impurities introduced therein and formed in another portion of said adjacent and narrow bandgap layers in laterally spaced relation to said first region, and a barrier region electrically isolating said first and second regions, at least said first region of a wider bandgap than said at least one narrow bandgap layer and forming a heterojunction between said first region and a portion of said at least one narrow bandgap layer remaining between said first and second regions, said first and second regions doped a first conductivity type, said portion of said at least one narrow bandgap layer remaining between said first and second regions comprising at least one active region consisting at least substantially of material of a second conductivity type to allow for effective injection of carriers of said second conductivity type into said active region.

Claim 10

The semiconductor device of claim 7, wherein said second region is an impurity induced disordered region.

Claim 11

The semiconductor device of claim 7, further comprising means to forward bias at least one of said first and second regions to bring about stimulated light emission in said at least one active region to thereby allow said semiconductor device to be operable as a semiconductor laser.

Claim 12

The semiconductor device of claim 9, wherein one of said first and second regions is sufficiently forward biased to cause stimulated light emission in said at least one active region and means to electrically modulate the other of said first and second regions to thereby modulate the emission properties of said semiconductor device operating as a semiconductor laser.

Claim 13

The semiconductor device of claim 9, wherein said electrically modulating means is a voltage modulating means to modulate the voltage at the other of said first and second regions to thereby selectively change the operational wavelength of said semiconductor device operating as a semiconductor laser.

Claim 14

The semiconductor device of claim 9, wherein said electrically modulating means is a current modulating means to modulate the current at the other of said first and second regions to thereby modulate the intensity of emission from said semiconductor device operating as a semiconductor laser.

Claim 15

A heterojunction laser comprising a plurality of semiconductor layers formed on a support, at least one of said layers having a narrower bandgap than immediately adjacent layers thereto, a first impurity induced disordered region formed in a portion of said at least one narrow bandgap layer, a second impurity induced disordered region formed in another portion of said at least one narrow bandgap layer in laterally spaced relation to said first impurity induced disordered region, said disordered regions of a wider bandgap than said at least one narrow bandgap layer and forming a heterojunction between said disordered regions and a portion of said at least one narrow bandgap layer remaining between said regions, said disordered regions doped a first conductivity type, said portion of said at least one narrow bandgap layer remaining between said first and second regions comprising at least one active region of said laser and consisting at least substantially of material of a second conductivity type to allow for effective injection of carriers of said second conductivity type into said at least one active region, means to forward bias at least one of said disordered regions to bring about stimulated light emission in said at least one active region.

Claim 16

A heterojunction laser comprising a plurality of semiconductor layers formed on a support, at least one of said layers having a narrower bandgap than immediately adjacent layers thereto, a first impurity induced disordered region formed in a portion of said at least one narrow bandgap layer, a second impurity induced disordered region formed in another portion of said at least one narrow bandgap layer in laterally spaced relation to said first impurity induced disordered region, said disordered regions of a wider bandgap than said at least one narrow bandgap layer and forming a heterojunction between said disordered regions and a portion of said at least one narrow bandgap layer remaining between said regions, said disordered regions doped a first conductivity type, said portion of said at least one narrow bandgap layer remaining between said first and second regions comprising at least one active region of said laser and consisting at least substantially of material of a second conductivity type to allow for effective injection of carriers of said second conductivity type into said at least one active region, means to forward bias at least one of said disordered regions to bring about stimulated light emission in said at least one active region.

Claim 17

The heterojunction laser of claim 13, wherein one of said impurity induced disordered regions is sufficiently forward biased to cause stimulated light emission in said at least one active region and means to electrically modulate the other of said impurity induced disordered regions to thereby modulate the emission properties of said laser.

Claim 18

The heterojunction laser of claim 14, wherein said electrically modulating means is a voltage modulating means to modulate the voltage at the other of said impurity induced disordered regions to thereby selectively change the operational wavelength of said laser.

Claim 19

The heterojunction laser of claim 14, wherein said electrically modulating means is a current modulating means to modulate the current at the other of said impurity induced disordered regions to thereby modulate the intensity of emission from said laser.

Claim 20

A heterojunction laser comprising a plurality of semiconductor layers formed on a support, at least one of said layers having a narrower bandgap than immediately adjacent layers thereto, a first impurity induced disordered region formed in a portion of said at least one narrow bandgap layer, a second impurity induced disordered region formed in another portion of said at least one narrow bandgap layer in laterally spaced relation to said first impurity induced disordered region, and a barrier region electrically isolating said disordered regions, said disordered regions of a wider bandgap than said at least one narrow bandgap layer and forming a heterojunction between said disordered regions and a portion of said at least one narrow bandgap layer remaining between said regions, said disordered regions doped a first conductivity type, said portion of said at least one narrow bandgap layer remaining between said first and second regions comprising at least one active region of said laser and comprised of a material, and in sufficient proximity to at least one region comprised at least substantially of material of a second conductivity type, to allow for effective injection of carriers of said second conductivity type into said at least one active region, and means to independently forward bias said at least one of said disordered regions to bring about stimulated light emission in said at least one active region.

Claim 21

A heterojunction laser comprising a plurality of semiconductor layers formed on a support, at least one of said layers having a narrower bandgap than immediately adjacent layers thereto, a first impurity induced disordered region formed in a portion of said at least one narrow bandgap layer, a second impurity induced disordered region formed in another portion of said at least one narrow bandgap layer in laterally spaced relation to said first impurity induced disordered region, and a barrier region electrically isolating said disordered regions, said disordered regions of a wider bandgap than said at least one narrow bandgap layer and forming a heterojunction between said disordered regions and a portion of said at least one narrow bandgap layer remaining between said regions, said disordered regions doped a first conductivity type, said portion of said at least one narrow bandgap layer remaining between said first and second regions comprising at least one active region of said laser and comprised of a material, and in sufficient proximity to at least one region comprised at least substantially of material of a second conductivity type, to allow for effective injection of carriers of said second conductivity type into said at least one active region, and means to independently forward bias said at least one of said disordered regions to bring about stimulated light emission in said at least one active region.

Claim 22

The heterojunction laser of claim 17, wherein one of said impurity induced disordered regions is sufficiently forward biased to cause stimulated light emission in said at least one active region and means to electrically modulate the other of said impurity induced disordered regions to thereby modulate the emission properties of said laser.

Claim 23

The heterojunction laser of claim 18, wherein said electrically modulating means is a voltage modulating means to modulate the voltage at the other of said impurity induced disordered regions to thereby selectively change the operational wavelength of said laser.

Claim 24

The heterojunction laser of claim 18, wherein said electrically modulating means is a current modulating means to modulate the current at the other of said impurity induced disordered regions to thereby modulate the intensity of emission from said laser.

Claim 25

A heterojunction transistor comprising a plurality of semiconductor layers formed on a support, at least one of said layers having a narrower bandgap than immediately adjacent layers thereto, a first impurity induced disordered region formed in a portion of said adjacent and narrow bandgap layers, a second impurity induced disordered region formed in another portion of said adjacent and narrow bandgap layers in laterally spaced relation to said first impurity induced disordered region, and a barrier region electrically isolating said disordered regions, said disordered regions of a wider bandgap than said at least one narrow bandgap layer and forming a heterojunction between said disordered regions and a portion of said at least one narrow bandgap layer remaining between said regions, said disordered regions doped a first conductivity type, said portion of said at least one narrow bandgap layer remaining between said first and second regions comprising at least one active base channel region comprised at least substantially of material of a second conductivity type to allow for effective injection of carriers of said second conductivity type into said at least one active base channel region.

Claim 26

A heterojunction transistor comprising a plurality of semiconductor layers formed on a support, at least one of said layers having a narrower bandgap than immediately adjacent layers thereto, a first impurity induced disordered region formed in a portion of said adjacent and narrow bandgap layers, a second impurity induced disordered region formed in another portion of said adjacent and narrow bandgap layers in laterally spaced relation to said first impurity induced disordered region, and a barrier region electrically isolating said disordered regions, said disordered regions of a wider bandgap than said at least one narrow bandgap layer and forming a heterojunction between said disordered regions and a portion of said at least one narrow bandgap layer remaining between said regions, said disordered regions doped a first conductivity type, said portion of said at least one narrow bandgap layer remaining between said first and second regions comprising at least one active base channel region comprised at least substantially of material of a second conductivity type to allow for effective injection of carriers of said second conductivity type into said at least one active base channel region.

Claim 27

A heterojunction transistor comprising a plurality of semiconductor layers formed on a support, at least one of said layers having a narrower bandgap than immediately adjacent layers thereto, a first impurity induced disordered region formed in a portion of said adjacent and narrow bandgap layers, a second impurity induced disordered region formed in another portion of said adjacent and narrow bandgap layers in laterally spaced relation to said first impurity induced disordered region, and a barrier region electrically isolating said disordered regions, said disordered regions of a wider bandgap than said at least one narrow bandgap layer and forming a heterojunction between said disordered regions and a portion of said at least one narrow bandgap layer remaining between said regions, said disordered regions doped a first conductivity type, said portion of said at least one narrow bandgap layer remaining between said first and second regions comprising at least one active base channel region comprised of a material, and in sufficient proximity to at least one region comprised at least substantially of material of a second conductivity type, to allow for effective injection of carriers of said second conductivity type into said active base channel region.

Claim 28

A heterojunction transistor comprising a plurality of semiconductor layers formed on a support, at least one of said layers having a narrower bandgap than immediately adjacent layers thereto, a first impurity induced disordered region formed in a portion of said adjacent and narrow bandgap layers, a second impurity induced disordered region formed in another portion of said adjacent and narrow bandgap layers in laterally spaced relation to said first impurity induced disordered region, and a barrier region electrically isolating said disordered regions, said disordered regions of a wider bandgap than said at least one narrow bandgap layer and forming a heterojunction between said disordered regions and a portion of said at least one narrow bandgap layer remaining between said regions, said disordered regions doped a first conductivity type, said portion of said at least one narrow bandgap layer remaining between said first and second regions comprising at least one active base channel region comprised of a material, and in sufficient proximity to at least one region comprised at least substantially of material of a second conductivity type, to allow for effective injection of carriers of said second conductivity type into said active base channel region.