US4644381A
Expired / Lapsed
US
⏱️ 0.0 years remaining
I2 L heterostructure bipolar transistors and method of making the same
Assignee: Siemens Corporate Research and Support Inc
•
Filing: 1985-04-08
•
Granted: 1987-02-17
•
Expires: 2005-04-08
Abstract
Abstract An integrated injection logic (I 2 L) semiconductor structure is disclosed which may be advantageously implemented in a group III-V compound semiconductor such as gallium arsenide. The base region of the lateral transistor is made extremely thin (less than one-tenth micron) by use of "regrowth" techniques. The structure of the vertical transistor is simplified by using a Schottky collector.
Inventors
- 👤 Chan-Long Shieh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:39
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10D; H10D84/00; H10D84/01; H10D84/0112; H10D84/0116; H10D84/0123; H10D84/0126; H10D84/0158; H10D84/02; H10D84/03; H10D84/038; H10D84/05; H10P14/27; H10P14/271; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; Y; Y10; Y10S; Y10S148/00; Y10S148/011; Y10S148/05; Y10S148/067; Y10S148/072; Y10S148/087; Y10S148/139
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
185 words
An integrated injection logic semiconductor structure comprising: a substrate having a first conductivity type and comprising a group III-V compound of semiconductor material; an epitaxial first layer of said first conductivity type disposed on one side of said substrate; an epitaxial second layer of a second opposite conductivity type disposed on said first layer; an insulating third layer disposed on said second layer; an epitaxial fourth layer of said first conductivity type disposed in a first opening in said second and third layers to the depth of said first layer; an epitaxial fifth layer of said second conductivity type disposed on said fourth layer in said first opening; an ohmic first contact disposed on said fifth layer over said first opening, forming the emitter contact of a lateral transistor; an ohmic second contact disposed on said second layer through a second opening in said third, fourth and fifth layers, forming the collector contact of said lateral transistor; an ohmic third contact disposed on the opposite side of said substrate, forming the base contact of said lateral transistor; and said third layer having a graded bandgap.
Claim 2
Dependent Claim
185 words
An integrated injection logic semiconductor structure comprising: a substrate having a first conductivity type and comprising a group III-V compound of semiconductor material; an epitaxial first layer of said first conductivity type disposed on one side of said substrate; an epitaxial second layer of a second opposite conductivity type disposed on said first layer; an insulating third layer disposed on said second layer; an epitaxial fourth layer of said first conductivity type disposed in a first opening in said second and third layers to the depth of said first layer; an epitaxial fifth layer of said second conductivity type disposed on said fourth layer in said first opening; an ohmic first contact disposed on said fifth layer over said first opening, forming the emitter contact of a lateral transistor; an ohmic second contact disposed on said second layer through a second opening in said third, fourth and fifth layers, forming the collector contact of said lateral transistor; an ohmic third contact disposed on the opposite side of said substrate, forming the base contact of said lateral transistor; and said third layer having a graded bandgap.
Claim 3
Dependent Claim
36 words
The semiconductor structure defined in claim 1, further comprising a Schottky fourth contact disposed on said second layer through an opening in said third, fourth and fifth layers, thereby forming the collector of a vertical transistor.
Claim 4
Dependent Claim
17 words
The semiconductor structure defined in claim 1, wherein said third layer is less than one-tenth micron thick.
Claim 5
Dependent Claim
23 words
The semiconductor structure defined in claim 1, wherein said first conductivity type is negative (n) and said second conductivity type is positive (p).
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-02-16 | 1990-08-18 | 1991-02-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-02-16 | 1994-08-18 | 1995-02-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-02-16 | 1998-08-18 | 1999-02-17 | $7700.00 | Window Closed / Lapsed |