US4251298A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Heterostructure laser
Assignee: International Standard Electric Corp
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Filing: 1979-02-09
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Granted: 1981-02-17
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Expires: 1999-02-09
Abstract
Abstract A laser p-n junction is formed in a structure consisting of a pair of layers of opposite conductivity type grown by liquid phase epitaxy and having sandwiched therebetween a quantity of active material of higher refractive index and lower band gap. The layers are grown on a substrate having a groove in its surface under conditions such that the active material is thicker in the region overlying the center of the groove than elsewhere and where a dopant is diffused through one of the layers to translate the portions of the p-n junction not overlying the groove into the material of the other layer while leaving the portion of the p-n junction overlying the center of the groove bounded on at least one side by the lower band-gap active material.
Inventors
- 👤 George H. B. Thompson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 05:44
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/24; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/822; H10H20/824; H01S5/22; H01S5/223; H01S5/2237
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
137 words
A method of fabricating a heterostructure laser comprising the steps of: forming a p-n junction in a structure comprising a pair of layers of opposite conductivity type grown by liquid phase epitaxy and having sandwiched therebetween a quantity of active material of higher refractive index and lower band gap; growing said layers on a substrate having a groove in its surface under conditions such that the active material is grown thicker in the region overlying the center of the groove than elsewhere; and diffusing a zinc dopant through one of the layers to translate the portions of the p-n junction not overlying the groove into the material of the other layer while leaving the portion of the p-n junction overlying the center of the groove bounded on at least one side by the lower band-gap active material.
Claim 2
Independent Claim
137 words
A method of fabricating a heterostructure laser comprising the steps of: forming a p-n junction in a structure comprising a pair of layers of opposite conductivity type grown by liquid phase epitaxy and having sandwiched therebetween a quantity of active material of higher refractive index and lower band gap; growing said layers on a substrate having a groove in its surface under conditions such that the active material is grown thicker in the region overlying the center of the groove than elsewhere; and diffusing a zinc dopant through one of the layers to translate the portions of the p-n junction not overlying the groove into the material of the other layer while leaving the portion of the p-n junction overlying the center of the groove bounded on at least one side by the lower band-gap active material.
Claim 3
Dependent Claim
39 words
The method as claimed in claim 1 wherein the growth of the active material is such that it is formed in three separated regions comprising a central region overlying the groove and two further regions flanking the central region.
Claim 4
Dependent Claim
43 words
The method as claimed in claim 1 or 2 wherein the configuration is such that subsequent to the diffusion the portion of the p-n junction overlying the center of the groove is bounded on only one side by the lower band-gap active material.
Claim 5
Dependent Claim
20 words
The method as claimed in claim 1 or 2 wherein the laser is grown in Ga 1-x Al x As.
Claim 6
Dependent Claim
23 words
The method as claimed in claim 1 or 2 wherein the dopant is diffused through said one of the layers from the substrate.
References Cited (Backward Citations)
US4033796A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-02-17 | 1984-08-18 | 1985-02-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-02-17 | 1988-08-18 | 1989-02-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-02-17 | 1992-08-18 | 1993-02-17 | $7700.00 | Window Closed / Lapsed |