Multi quantum well laser with parallel injection

Claim 2

A semiconductor laser comprising: a semi-insulative substrate; and a laser structure formed on said substrate so as to define a resonant cavity and including (1) an undoped laser active layer having quantum well and barrier layers and (2) at least two undoped semiconductor clad layers, said laser active layer being sandwiched between said semiconductor clad layers, each of said semiconductor clad layers having an energy band gap larger than the energy band gap of the quantum well layers, regions of said laser active layer on both sides of that region thereof which serves as a laser active region and which is extended in the lengthwise direction of the resonant cavity, being converted into a mixed crystal by impurity induced intermixing based upon selected impurity doping, one of the mixed crystal regions being doped with an impurity so as to form a p-type region, the other mixed crystal region being doped with another impurity so as to form an n-type region, said laser structure including means for injecting carriers into said laser active region which is sandwiched between said mixed crystal regions, in a direction parallel to said laser active layer.

Claim 3

A semiconductor laser according to claim 1, wherein said carrier injection means includes means for supplying a current to said mixed crystal regions.

Claim 4

A semiconductor laser according to claim 1, wherein said substrate is made of InP, and said laser active layer having a multi quantum well structure comprises alternate GaInAs and AlInAs layers.

Claim 5

A semiconductor laser according to claim 1, wherein said substrate is made of GaAs, and said laser active layer having a multi quantum well structure comprises alternate GaAlAs and AlAs layers.

Claim 6

A semiconductor laser according to claim 2, wherein said current supplying means includes impurity doped regions, each of which is formed by one of impurity diffusion and impurity ion implantation.

Claim 7

A semiconductor laser according to claim 1, wherein said means for injecting carriers includes impurity doped regions respectively extending from a surface of said laser structure to said mixed crystal regions.

Claim 8

A semiconductor laser according to claim 6, wherein said impurity doped regions are respectively electrically connected to electrodes on said surface of saod laser structure.

Claim 9

A semiconductor laser according to claim 6, wherein said mixed crystal regions are buried in said laser structure.

Claim 10

A semiconductor laser according to claim 8, further including a cap layer on said surface of said laser structure.

Claim 11

A semiconductor laser according to claim 9, wherein said impurity doped regions extend through said cap layer to the surface thereof, with electrodes being provied respectively in contact with said impurity doped regions, on said surface of the cap layer.

Claim 12

A semiconductor laser according to claim 1, wherein said mixed crystal regions are buried in said laser structure.

Claim 13

A semiconductor laser according to claim 11, wherein said elective impurity doping is provided by ion implantation, in forming the mixed crystal buried in the laser structure.

Claim 14

A semiconductor laser according to claim 1, wherein said substrate is a GaAs substrate, the semiconductor clad layers are of GaAlAs, and the quantum well and barrier layers are GaAs and AlAs layers.

Claim 15

A semiconductor laser according to claim 13, wherein said mixed crystal regions are buried in said laser structure.

Claim 16

A semiconductor laser according to claim 14, wherein the mixed crystal region doped with an impurity so as to form the p-type region has been doped with aluminum ions and beryllium ions, and the mixed crystal region doped with an impurity so as to form the n-type region has been doped with silicon ions.

Claim 17

A semiconductor laser according to claim 16, further comprising contact regions respectively extending from the buried mixed crystal regions to a surface of the laser structrue, the contact regions being n + -type and p - -type implanted regions respectively in contact with the n-type and p-type mixed crystal regions, the n + -type and p + -type contact regions being formed respectively by introducing silicon and beryllium into the laser structure.

Claim 18

A semiconductor laser according to claim 16, wherein the laser active region, sandwiched between said mixed crystal regions, has a width of 0.8 to 1.5 μm between said mixed crystal regions.

Claim 19

A semiconductor laser according to claim 1, wherein said at least two undoped semiconductor clad layers, sandwiching said laser active layer, includes at least two upper undoped semiconductor clad layers on the laser active layer, and wherein the mixed crystal regions extend to an upper surface of a lower one of the at least two upper undoped semiconductor clad layers but are buried in said laser structure.

Claim 20

A semiconductor laser according to claim 18, wherein said at least two undoped semiconductor clad layers are of GaAlAs, said substrate is of a semi-insulative GaAs, and the quantum well and barrier layers are of GaAlAs and AlAs.

Claim 21

A semiconductor laser according to claim 19, wherein the mixed crystal region doped with an impurity so as to form the p-type region has been doped with zinc ions, and the mixed crystal region doped with an impurity so as to form the n-type region has been doped with silicon ions.

Claim 22

A semiconductor laser according to claim 20, further comprising contact regions respectively extending from a surface of the laser structure to the mixed crystal regions, the contact regions being n-type and p-type implanted regions respectively in contact with the n-type and p-type mixed crystal regions, the n-type and p-type contact regions being formed by implanting silicon ions and beryllium ions, respectively, into the laser structure.

Claim 23

A semiconductor laser according to claim 18, wherein the buried mixed crystal regions are regions formed by providing said lower one of the at least two upper undoped semiconductor clad layers on said laser active layer; performing the selected impurity doping by implanting the impurity for producing the mixed crystal regions in said lower one of the at least two upper undoped semiconductor clad layers; and forming another of the at least two upper undoped semiconductor clad layers so as to provide the buried mixed crystal regions.

Claim 24

A semiconductor laser according to claim 1, wherein each of the quantum well layers has a thickness of 30-200 Å, and each of the barrier layers has a thickness of 20-400 Å,

Claim 25

A semiconductor laser according to claim 23, wherein the total thickness of the quantum well and barrier layers is 0.01 to 0.15 μm.

Claim 26

A semiconductor laser comprsiing: a semi-insulative semiconductive substrate; a first semiconductor layer having a first energy band gap; a second semiconductor layer having a second energy band gap; a laser active layer sandwiched between the first and second semiconductor layers, the laser active layer having quantum well and barrier layers, the quantum well layers having an energy band gap smaller than the first energy band gap and smaller than the second energy band gap, said laser active layer and the first and second semiconductor layers forming a resonant cavity, said laser active layer having a laser active region and mixed crystal regions which sandwich the laser active region in a direction perpendicular to the length of the resonant cavity, the mixed crystal regions being formed by converting said laser active layer into mixed crystal by impurity induced intermixing of selective impurity doping, the mixed crystal regions sandwiching the laser active region respectively being of opposite conductivity type to each other; first and second electrodes for injecting carriers to said laser active layer; and means for electrically connecting the first and second electrodes to the respective mixed crystal regions, so as to transfer carriers between said first and second electrodes and the respective mixed crsytal regions, whereby carriers can be injected into the laser active region in a direction parallel to the laser active layer.

Claim 27

A semiconductor laser comprsiing: a semi-insulative semiconductive substrate; a first semiconductor layer having a first energy band gap; a second semiconductor layer having a second energy band gap; a laser active layer sandwiched between the first and second semiconductor layers, the laser active layer having quantum well and barrier layers, the quantum well layers having an energy band gap smaller than the first energy band gap and smaller than the second energy band gap, said laser active layer and the first and second semiconductor layers forming a resonant cavity, said laser active layer having a laser active region and mixed crystal regions which sandwich the laser active region in a direction perpendicular to the length of the resonant cavity, the mixed crystal regions being formed by converting said laser active layer into mixed crystal by impurity induced intermixing of selective impurity doping, the mixed crystal regions sandwiching the laser active region respectively being of opposite conductivity type to each other; first and second electrodes for injecting carriers to said laser active layer; and means for electrically connecting the first and second electrodes to the respective mixed crystal regions, so as to transfer carriers between said first and second electrodes and the respective mixed crsytal regions, whereby carriers can be injected into the laser active region in a direction parallel to the laser active layer.

Claim 28

A semiconductor laser accoridng to claim 25, wherein the first and second semiconductor layers are undoped semiconductor layers.

Claim 29

A semiconductor device according to claim 25, wherein the mixed crystal regions are buried in the first and second semiconductor layers.

Claim 30

A semiconductor laser according to claim 27, wherein the first and seocnd semiconductor layers are undoped semiconductor layers.