Patent US5151387A successfully refreshed from Google Patents.
US5151387A
Expired / Lapsed
US
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Polycrystalline silicon contact structure
Assignee: STMicroelectronics lnc USA
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Filing: 1990-04-30
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Granted: 1992-09-29
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Expires: 2010-04-30
Abstract
Abstract A contact structure provides electrical contact between two polycrystalline silicon interconnect layers. The lower layer has a silicide layer on its upper surface. The upper polycrystalline silicon layer can be doped with a different conductivity type, and makes an ohmic contact with the silicided region of the lower polycrystalline silicon layer.
Inventors
- 👤 James Brady
- 👤 Tsiu C. Chan
- 👤 David S. Culver
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 11:49
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4451; H10W20/42; Y; Y10; Y10S; Y10S148/00; Y10S148/019; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24917; Y10T428/24926
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
103 words
A method for forming a contact in a semiconductor integrated circuit device, comprising the steps of: forming a first polycrystalline silicon interconnect layer having a first conductivity type; forming a silicide layer on the first polycrystalline silicon interconnect layer; forming an insulating layer over the entire device; forming a contact opening in the insulating layer, wherein a contact region on an upper surface of the silicide layer is exposed; forming a second polycrystalline silicon interconnect layer having a second conductivity type over the insulating layer, wherein the second polycrystalline silicon interconnect layer makes ohmic contact with the silicide layer through the contact opening.
Claim 2
Independent Claim
103 words
A method for forming a contact in a semiconductor integrated circuit device, comprising the steps of: forming a first polycrystalline silicon interconnect layer having a first conductivity type; forming a silicide layer on the first polycrystalline silicon interconnect layer; forming an insulating layer over the entire device; forming a contact opening in the insulating layer, wherein a contact region on an upper surface of the silicide layer is exposed; forming a second polycrystalline silicon interconnect layer having a second conductivity type over the insulating layer, wherein the second polycrystalline silicon interconnect layer makes ohmic contact with the silicide layer through the contact opening.
Claim 3
Dependent Claim
35 words
The method of claim 1, wherein the first and second conductivity types are the same type, and wherein the second polycrystalline silicon interconnect layer is lightly doped relative to the first polycrystalline silicon interconnect layer.
Claim 4
Dependent Claim
16 words
The method of claim 1, wherein the first and second conductivity types are of opposite types.
Claim 5
Dependent Claim
35 words
The method of claim 1, wherein the first and second conductivity types are the same type, and wherein the first polycrystalline silicon interconnect layer is lightly doped relative to the second polycrystalline silicon interconnect layer.
Claim 6
Dependent Claim
19 words
The method of claim 3, wherein the first conductivity type is N-type, and the second conductivity type is P-type.
Claim 7
Dependent Claim
19 words
The method of claim 3, wherein the first conductivity type is P-type, and the second conductivity type is N-type.
Claim 8
Independent Claim
146 words
A method for forming a contact in a semiconductor integrated circuit device, comprising the steps of: forming a first polycrystalline silicon interconnect layer having a first conductivity type; forming a silicide layer on the first polycrystalline silicon interconnect layer; forming an insulating layer over the entire device; forming a contact opening in the insulating layer, wherein a contact region on an upper surface of the silicide layer is exposed; forming a second polycrystalline silicon interconnect layer having a second conductivity type opposite to the first conductivity type over the insulating layer, wherein the second polycrystalline silicon interconnect layer makes ohmic contact with the silicide layer through the contact opening; and forming a region having the first conductivity type within the second polycrystalline silicon interconnect layer at a location spaced from the contact opening, wherein a P-N junction is formed within the second polycrystalline silicon interconnect layer.
Claim 9
Independent Claim
146 words
A method for forming a contact in a semiconductor integrated circuit device, comprising the steps of: forming a first polycrystalline silicon interconnect layer having a first conductivity type; forming a silicide layer on the first polycrystalline silicon interconnect layer; forming an insulating layer over the entire device; forming a contact opening in the insulating layer, wherein a contact region on an upper surface of the silicide layer is exposed; forming a second polycrystalline silicon interconnect layer having a second conductivity type opposite to the first conductivity type over the insulating layer, wherein the second polycrystalline silicon interconnect layer makes ohmic contact with the silicide layer through the contact opening; and forming a region having the first conductivity type within the second polycrystalline silicon interconnect layer at a location spaced from the contact opening, wherein a P-N junction is formed within the second polycrystalline silicon interconnect layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-09-29 | 1996-03-30 | 1996-09-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-09-29 | 2000-03-30 | 2000-09-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-09-29 | 2004-03-30 | 2004-09-29 | $7700.00 | Window Closed / Lapsed |