Patent US4395913A successfully refreshed from Google Patents.
US5146307A
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US
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Fuse having a dielectric layer between sloped insulator sidewalls
Assignee: Texas Instruments Inc
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Filing: 1991-05-15
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Granted: 1992-09-08
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Expires: 2011-05-15
Abstract
Abstract A method for forming a fuse for integrated circuits and a fuse produced therefrom is disclosed. The fuse (10) includes a substrate (12) having thick oxide layers (14) with a gap (16) formed therebetween. A second oxide layer (20) is grown onto an N+ region (18). At the intersection between oxide layers (20, 14), a sublithographic area is exposed and a dielectric layer (24) is formed therein. This structure is capable of reducing the capacitance between a polysilicon layer (26) formed thereon and the N+ diffusion region (18).
Inventors
- 👤 Cetin Kaya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:38
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6322; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/065; H10W20/40; H10W20/49; H10W20/493; H10W20/495
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
152 words
A fuse formed on a face of a semiconductor layer of a first conductivity type, comprising: a first insulator layer extending over said face, said first insulator layer having a first sloped sidewall; a region of a second conductivity type opposite said first conductivity type formed in said face adjacent said first sloped sidewall, said region having a dopant concentration which decreases as the thickness of said first insulator layer over said region increases; a second insulator layer extending over a portion of said region, said second insulator layer having a second sloped sidewall, said first and second sloped sidewalls spaced apart by a gap on said region, said second insulator layer having a thickness which increases as the dopant concentration of said region under said second insulator layer increases; a dielectric layer formed between said first and second sloped sidewalls and over said gap; and a conductor adjacent said dielectric layer.
Claim 2
Dependent Claim
152 words
A fuse formed on a face of a semiconductor layer of a first conductivity type, comprising: a first insulator layer extending over said face, said first insulator layer having a first sloped sidewall; a region of a second conductivity type opposite said first conductivity type formed in said face adjacent said first sloped sidewall, said region having a dopant concentration which decreases as the thickness of said first insulator layer over said region increases; a second insulator layer extending over a portion of said region, said second insulator layer having a second sloped sidewall, said first and second sloped sidewalls spaced apart by a gap on said region, said second insulator layer having a thickness which increases as the dopant concentration of said region under said second insulator layer increases; a dielectric layer formed between said first and second sloped sidewalls and over said gap; and a conductor adjacent said dielectric layer.
Claim 3
Dependent Claim
38 words
The fuse of claim 1 in which said dielectric layer includes: a first oxide layer formed on said gap; a nitride layer formed on said first oxide layer; and a second oxide layer formed on said nitride layer.
Claim 4
Dependent Claim
19 words
The fuse as recited in claim 1, wherein said first insulator layer has a thickness of approximately 8,000 angstroms.
Claim 5
Dependent Claim
16 words
The fuse of claim 1 in which said first and second insulator layers are oxide layers.
Claim 6
Dependent Claim
18 words
The fuse as recited in claim 1, wherein said dielectric layer has a thickness of approximately 125 angstroms.
Claim 7
Dependent Claim
17 words
The fuse of claim 1 in which said first and second insulator layers intersect adjacent said gap.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-09-08 | 1996-03-09 | 1996-09-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-09-08 | 2000-03-09 | 2000-09-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-09-08 | 2004-03-09 | 2004-09-08 | $7700.00 | Window Closed / Lapsed |