US5130103A — Method for forming semiconductor crystal and semi…

Claim 1

Independent Claim 92 words

A semiconductor crystal article, comprising a substrate having (i) a deposition surface (S NDS ) with small nucleation density, (ii) a deposition surface (S NDL ) formed of a metal arranged adjacent to said deposition surface (S NDS ) having a sufficiently small area so as to form only a single nucleus and greater nucleation density (ND 1 ) than the nucleation density (ND S ) of said deposition surface (S NDS ), and (iii) a semiconductor silicon monocrystal grown from said single nucleus which covers said deposition surface (S NDL ).

Claim 2

Dependent Claim 92 words

A semiconductor crystal article, comprising a substrate having (i) a deposition surface (S NDS ) with small nucleation density, (ii) a deposition surface (S NDL ) formed of a metal arranged adjacent to said deposition surface (S NDS ) having a sufficiently small area so as to form only a single nucleus and greater nucleation density (ND 1 ) than the nucleation density (ND S ) of said deposition surface (S NDS ), and (iii) a semiconductor silicon monocrystal grown from said single nucleus which covers said deposition surface (S NDL ).

Claim 3

Dependent Claim 21 words

A semiconductor crystal article according to claim 1, wherein said deposition surface (S NDL ) is arranged in a plural number.

Claim 4

Dependent Claim 23 words

A semiconductor crystal article according to claim 1, wherein said deposition surface (S NDL ) is arranged as sectionalized in a plural number.

Claim 5

Dependent Claim 31 words

A semiconductor crystal article according to claim 1, wherein said deposition surface (S NDL ) is arranged in a plural number as sectionalized regularly within said deposition surface (S NDS ).

Claim 6

Dependent Claim 31 words

A semiconductor crystal article according to claim 1, wherein said deposition surface (S NDL ) is arranged in a plural number as sectionalized irregularly within said deposition surface (S NDS ).

Claim 7

Dependent Claim 36 words

A semiconductor crystal article according to claim 2, wherein the semiconductor single crystals grown from the respective deposition surfaces (S NDL ) contact with the single crystals grown from the adjacent deposition surfaces (S NDL ).

Claim 8

Dependent Claim 38 words

A semiconductor crystal article according to claim 2, wherein the semiconductor single crystals grown from the respective deposition surface (S NDL ) are spatially apart from the single crystals grown from the adjacent deposition surface (S NDL ).

Claim 9

Dependent Claim 73 words

A crystal article, comprising a semiconductor crystal forming surface formed of an amorphous material, a nucleation surface (S NDL ) formed of a metal with sufficiently greater nucleation density (ND) than said amorphous material forming said crystal surface, having a sufficiently small area so as to form only a single nucleus on said crystal forming surface, and a semiconductor silicon monocrystal grown from said single nucleus on said nucleation surface (S NDL ).

Claim 10

Dependent Claim 73 words

A crystal article, comprising a semiconductor crystal forming surface formed of an amorphous material, a nucleation surface (S NDL ) formed of a metal with sufficiently greater nucleation density (ND) than said amorphous material forming said crystal surface, having a sufficiently small area so as to form only a single nucleus on said crystal forming surface, and a semiconductor silicon monocrystal grown from said single nucleus on said nucleation surface (S NDL ).

Claim 11

Dependent Claim 38 words

A crystal article according to claim 8, wherein said nucleation surface (S NDL ) is provided in a plural number with desired intervals, and having grain boundaries approximately at the center between said nucleation surfaces (S NDL ).

Claim 12

Dependent Claim 86 words

A semiconductor crystal article, comprising a substrate for formation of semiconductor silicon monocrystal having a nonnucleation surface (S NDS ) formed of an amorphous material and a nucleation surface (S NDL ) formed of a metal different from said amorphous material having greater nucleation density (ND) than said nonnucleation surface (S NDS ) relative to the material for forming the semiconductor silicon monocrystal to be formed, and semiconductor silicon monocrystal formed corresponding one by one to said nucleation surface (S NDL ) on said nucleation surfaces.

Claim 13

Dependent Claim 86 words

A semiconductor crystal article, comprising a substrate for formation of semiconductor silicon monocrystal having a nonnucleation surface (S NDS ) formed of an amorphous material and a nucleation surface (S NDL ) formed of a metal different from said amorphous material having greater nucleation density (ND) than said nonnucleation surface (S NDS ) relative to the material for forming the semiconductor silicon monocrystal to be formed, and semiconductor silicon monocrystal formed corresponding one by one to said nucleation surface (S NDL ) on said nucleation surfaces.

Claim 14

Dependent Claim 16 words

A semiconductor crystal article according to claim 10, wherein said amorphous material is SiO 2 .

Claim 15

Dependent Claim 13 words

An electronic device produced by utilizing a semiconductor crystal article of claim 1.

Claim 16

Dependent Claim 13 words

An electronic device produced by utilizing a semiconductor crystal article of claim 8.

Claim 17

Dependent Claim 13 words

An electronic device produced by utilizing a semiconductor crystal article of claim 10.

Claim 18

Dependent Claim 20 words

The semiconductor crystal article according to claim 1, wherein said deposition surface (S NDL ) is formed of silicon oxide.

Claim 19

Dependent Claim 26 words

The semiconductor crystal article according to claim 1, wherein said metal is at least one selected from the group consisting of Al, Cu, W and Mo.

Claim 20

Dependent Claim 17 words

The semiconductor crystal article according to claim 1, wherein, said semiconductor single crystal is constituted of silicon.

Claim 21

Dependent Claim 14 words

The crystal article according to claim 8, wherein said amorphous material is silicon oxide.

Claim 22

Dependent Claim 32 words

The crystal article according to claim 8, wherein said metal forming said nucleation surface (S NDL ) is at least one selected from the group consisting of Al, Cu, W and Mo.

Claim 23

Dependent Claim 32 words

The semiconductor crystal article of claim 10, wherein said metal forming said nucleation surface (S NDL ) is at least one selected from the group consisting of Al, Cu, W and Mo.

Claim 24

Dependent Claim 66 words

A semiconductor crystal article comprising a substrate having a surface constituted of an amorphous material and a nucleation surface constituted of a metal, and a semiconductor single crystal grown from said nucleation surface, wherein said nucleation surface has a greater nucleation density than said amorphous material and a sufficiently small area so as to form only a single nucleus from which a silicon monocrystal is grown.

Claim 25

Dependent Claim 66 words

A semiconductor crystal article comprising a substrate having a surface constituted of an amorphous material and a nucleation surface constituted of a metal, and a semiconductor single crystal grown from said nucleation surface, wherein said nucleation surface has a greater nucleation density than said amorphous material and a sufficiently small area so as to form only a single nucleus from which a silicon monocrystal is grown.

Claim 26

Dependent Claim 15 words

The semiconductor crystal article according to claim 21, wherein said amorphous material is silicon dioxide.

Claim 27

Dependent Claim 26 words

The semiconductor crystal article according to claim 21, wherein said metal is at least one selected from the group consisting of Al, Cu, W and Mo.

Claim 28

Dependent Claim 90 words

A photovoltaic device comprising a substrate having an (i) electrode constituted of a metal, and (ii) a film formed of an insulating material having a contact hole exposing said electrode, wherein said metal has a greater nucleation density than said insulating material, and an area of said electrode exposed through said contact hole is sufficiently small so as to form only a single nucleus from which a silicon moncrystal is grown, and (iii) a photoelectric conversion region formed from a semiconductor silicon monocrystal which is grown from said single nucleus.

Claim 29

Dependent Claim 90 words

A photovoltaic device comprising a substrate having an (i) electrode constituted of a metal, and (ii) a film formed of an insulating material having a contact hole exposing said electrode, wherein said metal has a greater nucleation density than said insulating material, and an area of said electrode exposed through said contact hole is sufficiently small so as to form only a single nucleus from which a silicon moncrystal is grown, and (iii) a photoelectric conversion region formed from a semiconductor silicon monocrystal which is grown from said single nucleus.

Claim 30

Dependent Claim 94 words

A crystal article produced by the process which comprises applying a semiconductor crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S NDS ) with small nucleation density and a nucleation surface (S NDL ) with metal exposed from said nonnucleation surface having a sufficiently small area for a crystal growing only from a single nucleus and having a greater nucleation density (ND l ) then the nucleation density (ND s ) of said nonnucleation surface (S NDS ), thereby growing a semiconductor silicon crystal from said single nucleus.

Claim 31

Dependent Claim 94 words

A crystal article produced by the process which comprises applying a semiconductor crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S NDS ) with small nucleation density and a nucleation surface (S NDL ) with metal exposed from said nonnucleation surface having a sufficiently small area for a crystal growing only from a single nucleus and having a greater nucleation density (ND l ) then the nucleation density (ND s ) of said nonnucleation surface (S NDS ), thereby growing a semiconductor silicon crystal from said single nucleus.

Claim 32

Dependent Claim 100 words

A crystal article produced by the process which comprises applying a semiconductor crystal forming treatment on a substrate having two kinds of crystal formation surfaces with a sufficiently great nucleation density difference (ΔND), of which the nucleation surfaces (S NDL ) of metal with greater nucleation density is exposed from the nonnucleation surface (S NDS ) with smaller nucleation density and has a sufficiently small area for a semiconductor silicon crystal growing from only a single nucleus to form a stable single nucleus on said nucleation surface (S NDL ), thereby growing a semiconductor silicon monocrystal from said single nucleus.

Claim 33

Dependent Claim 100 words

A crystal article produced by the process which comprises applying a semiconductor crystal forming treatment on a substrate having two kinds of crystal formation surfaces with a sufficiently great nucleation density difference (ΔND), of which the nucleation surfaces (S NDL ) of metal with greater nucleation density is exposed from the nonnucleation surface (S NDS ) with smaller nucleation density and has a sufficiently small area for a semiconductor silicon crystal growing from only a single nucleus to form a stable single nucleus on said nucleation surface (S NDL ), thereby growing a semiconductor silicon monocrystal from said single nucleus.

Claim 34

Dependent Claim 144 words

A crystal article produced by the process which comprises forming a nucleation surface (S NDL ) at a desired site of a base substrate surface with large nucleation density exposed as a small area for a crystal growing from only a single nucleus by providing onto said base substrate surface a nonnucleation surface (S NDS ) having smaller nucleation density (ND S ) than nucleation density (ND L ) of said nucleation surface (S NDL ) by addition of a metal (M S ) for forming said nonnucleation sursface (S NDS ) which is different from the material (M L ) forming said nucleation surface (S NDL ) to obtain a substrate, and then applying a semiconductor crystal forming treatment on said substrate to form a single nucleus on said nucleation surface (S NDL ), thereby growing a silicon monocrystal from said single nucleus.

Claim 35

Dependent Claim 144 words

A crystal article produced by the process which comprises forming a nucleation surface (S NDL ) at a desired site of a base substrate surface with large nucleation density exposed as a small area for a crystal growing from only a single nucleus by providing onto said base substrate surface a nonnucleation surface (S NDS ) having smaller nucleation density (ND S ) than nucleation density (ND L ) of said nucleation surface (S NDL ) by addition of a metal (M S ) for forming said nonnucleation sursface (S NDS ) which is different from the material (M L ) forming said nucleation surface (S NDL ) to obtain a substrate, and then applying a semiconductor crystal forming treatment on said substrate to form a single nucleus on said nucleation surface (S NDL ), thereby growing a silicon monocrystal from said single nucleus.

Claim 36

Dependent Claim 128 words

A crystal article produced by the process which comprises utilizing the differences in nucleation density between the crystal forming materials depending on the kinds of the materials for forming the crystal forming surface, which comprises forming selectively on a base substrate a thin film of a material (M S ) with smaller nucleation density than the metal (M L ) of the surface of base substrate so as to leave an uncovered area on the surface of base substrate to thereby form a nucleation surface (S NDL ) having a sufficiently small area so that only a single nucleus may grow forming only a single nucleus on said nucleation surface (S NDL ) and growing a semiconductor silicon monocrystal from said single nucleus, thereby forming a semiconductor crystal.

Claim 37

Dependent Claim 128 words

A crystal article produced by the process which comprises utilizing the differences in nucleation density between the crystal forming materials depending on the kinds of the materials for forming the crystal forming surface, which comprises forming selectively on a base substrate a thin film of a material (M S ) with smaller nucleation density than the metal (M L ) of the surface of base substrate so as to leave an uncovered area on the surface of base substrate to thereby form a nucleation surface (S NDL ) having a sufficiently small area so that only a single nucleus may grow forming only a single nucleus on said nucleation surface (S NDL ) and growing a semiconductor silicon monocrystal from said single nucleus, thereby forming a semiconductor crystal.

Claim 38

Dependent Claim 153 words

A crystal article produced by the process which comprises forming selectively a semiconductor single crystal layer by utilizing the difference in nucleation density between the semiconductor crystal forming materials depending on the kinds of the materials for forming crystal forming surfaces, which comprises forming selectively on a base substrate having a surface of metal with sufficiently large nucleation density of an amorphous material a thin film of a material with smaller nucleation density than said amorphous material so as to leave an exposed area of the surface of said base substrate to provide a nucleation surface having a sufficiently small area to form only a single nucleus, and with a distance of the required size of said single crystal layer or more, then forming only a single nucleus on said nucleation surface (S NDL ) to grow a semiconductor silicon monocrystal from said single nucleus, thereby forming selectively a semiconductor single crystal layer.

Claim 39

Dependent Claim 153 words

A crystal article produced by the process which comprises forming selectively a semiconductor single crystal layer by utilizing the difference in nucleation density between the semiconductor crystal forming materials depending on the kinds of the materials for forming crystal forming surfaces, which comprises forming selectively on a base substrate having a surface of metal with sufficiently large nucleation density of an amorphous material a thin film of a material with smaller nucleation density than said amorphous material so as to leave an exposed area of the surface of said base substrate to provide a nucleation surface having a sufficiently small area to form only a single nucleus, and with a distance of the required size of said single crystal layer or more, then forming only a single nucleus on said nucleation surface (S NDL ) to grow a semiconductor silicon monocrystal from said single nucleus, thereby forming selectively a semiconductor single crystal layer.

Claim 40

Dependent Claim 26 words

The photovoltaic device according to claim 24, wherein said electrode constituted of a metal is selected from the group consisting of Al, Cu, W and Mo.

Claim 41

Dependent Claim 14 words

The photovoltaic device according to claim 24, wherein said insulating material is silicon dioxide.

Claim 42

Dependent Claim 18 words

The photovoltaic device according to claim 24, wherein said photoelectric conversion region is constituted of a p-n junction.

Claim 43

Dependent Claim 18 words

The photovoltaic device according to claim 24, wherein said photoelectric conversion region is constituted of a p-i-n- junction.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1995-07-14	1996-01-13	1996-07-14	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1999-07-14	2000-01-13	2000-07-14	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2003-07-14	2004-01-13	2004-07-14	$7700.00	Window Closed / Lapsed

Method for forming semiconductor crystal and semiconductor crystal article obtained by said method

Abstract

Inventors

Bibliographic Details

Claims Analysis

References Cited (Backward Citations)

USPTO Annuity & Maintenance Windows

Assigned Categories & Tags

Assign Category Tag