US5126281A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Diffusion using a solid state source
Assignee: HP Inc
•
Filing: 1990-09-11
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Granted: 1992-06-30
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Expires: 2010-09-11
Abstract
Abstract Method for deposit of a p type dopant from a dopant layer into a predetermined region of a III-V semiconductor layer or multiple layers. The p type dopant is deposited in very high concentration in a semiconductor layer adjacent to the predetermined region. A second semiconductor layer, doped with a lower concentration of an n type dopant, is later deposited so that the high concentration p type dopant layer lies between the predetermined region and the n type dopant layer. The p type dopant is diffused into the predetermined region by thermally driven diffusion, which may be carried out at a lower temperature or for a shorter diffusion time interval than with conventional diffusion, and p type dopant diffusion may extend over greater distances.
Inventors
- 👤 Kent A. W. Carey
- 👤 James B. Williamson
- 👤 Thomas S. Low
- 👤 James S. C. Chang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 12:41
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/17; H10P32/174; Y; Y10; Y10S; Y10S148/00; Y10S148/015; Y10S148/037
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
228 words
A method for deposition of a selected p type dopant in two designated regions contiguous to a selected surface of a column III-column V semiconductor material, the method comprising the steps of: forming first, second and third mesas of a second semiconductor material covering portions of the selected surface, the mesas being adjacent to one another but spaced apart by selected distances so that portions of the selected surface are exposed contiguous to the designated regions and so that the second mesa is positioned approximately between the first and third mesas; depositing a dopant source layer on the exposed surfaces of the mesas and of the selected surface, where the dopant source layer material includes a semiconductor material doped with the selected p type dopant and having a dopant concentration in the range 10 17 cm -3 to 10 21 cm -3 ; depositing a covering layer on the dopant source layer, where the covering layer material includes a semiconductor material doped with an n type dopant and having a dopant concentration in the range 10 16 cm -3 to 10 21 cm -3 ; and heating the dopant source layer to a selected temperature T in the range of 500° C.≦T≦860° C. for a selected time interval, and allowing the selected dopant to diffuse into the semiconductor in the designated regions and away from the covering layer.
Claim 2
Independent Claim
228 words
A method for deposition of a selected p type dopant in two designated regions contiguous to a selected surface of a column III-column V semiconductor material, the method comprising the steps of: forming first, second and third mesas of a second semiconductor material covering portions of the selected surface, the mesas being adjacent to one another but spaced apart by selected distances so that portions of the selected surface are exposed contiguous to the designated regions and so that the second mesa is positioned approximately between the first and third mesas; depositing a dopant source layer on the exposed surfaces of the mesas and of the selected surface, where the dopant source layer material includes a semiconductor material doped with the selected p type dopant and having a dopant concentration in the range 10 17 cm -3 to 10 21 cm -3 ; depositing a covering layer on the dopant source layer, where the covering layer material includes a semiconductor material doped with an n type dopant and having a dopant concentration in the range 10 16 cm -3 to 10 21 cm -3 ; and heating the dopant source layer to a selected temperature T in the range of 500° C.≦T≦860° C. for a selected time interval, and allowing the selected dopant to diffuse into the semiconductor in the designated regions and away from the covering layer.
Claim 3
Independent Claim
208 words
A method for deposition of a selected dopant in a designated region of a column III-column V semiconductor material contiguous to a selected surface of the semiconductor material, the method comprising the steps of: depositing a layer of insulating material on the selected surface of the semiconductor material adjacent to the designated region; forming at least one aperture in the insulating material to expose a portion of the selected surface that is contiguous to the designated region; growing a p type dopant source layer of column III-column V semiconductor material having a p type dopant concentration in the range 10 17 -10 21 cm -3 over the exposed portion of the selected surface; depositing a covering layer, including a column III-column V semiconductor material and doped with an n type dopant having a concentration in the range of 10 16 -10 21 cm -3 , contiguous to a portion of the dopant source layer and spaced apart from the selected surface; and heating the dopant source layer to a selected temperature T in the range 500°-860° C. for a selected time interval, and allowing the p type dopant in the dopant source layer to diffuse, in a direction away from the covering layer, and into the designated region.
Claim 4
Independent Claim
208 words
A method for deposition of a selected dopant in a designated region of a column III-column V semiconductor material contiguous to a selected surface of the semiconductor material, the method comprising the steps of: depositing a layer of insulating material on the selected surface of the semiconductor material adjacent to the designated region; forming at least one aperture in the insulating material to expose a portion of the selected surface that is contiguous to the designated region; growing a p type dopant source layer of column III-column V semiconductor material having a p type dopant concentration in the range 10 17 -10 21 cm -3 over the exposed portion of the selected surface; depositing a covering layer, including a column III-column V semiconductor material and doped with an n type dopant having a concentration in the range of 10 16 -10 21 cm -3 , contiguous to a portion of the dopant source layer and spaced apart from the selected surface; and heating the dopant source layer to a selected temperature T in the range 500°-860° C. for a selected time interval, and allowing the p type dopant in the dopant source layer to diffuse, in a direction away from the covering layer, and into the designated region.
Claim 5
Dependent Claim
47 words
The method of claim 2, further comprising the step of also growing said p type dopant source layer over at least a portion of said thin insulating layer, at the time said p type dopant source layer is grown over said exposed portion of said selected surface.
Claim 6
Dependent Claim
29 words
The method of claim 2, further comprising the step of choosing said semiconductor material as Ga x In 1-x As for some value of x between 0 to 1.
Claim 7
Dependent Claim
33 words
The method of claim 2, further comprising the step of providing said p type dopant at a concentration of between 10 17 cm -3 and 10 22 cm -3 in said surface layer.
Claim 8
Dependent Claim
51 words
The method of claim 4, further comprising the steps of: choosing said p type dopant from the class of p type dopants consisting of Be, Mg, Zn and Cd; and choosing said n type dopant from the class of n type dopants consisting of Si, Ge, Sn, S, Se and Te.
Claim 9
Dependent Claim
32 words
The method of claim 2, further comprising the step of depositing an insulating layer over said covering layer to suppress loss of column V elements when said dopant source layer is heated.
Claim 10
Dependent Claim
39 words
The method of claim 2, further comprising the step of positioning a layer of semiconductor material contiguous to an exposed surface of said covering layer to suppress loss of column V elements when said dopant source layer is heated.
Claim 11
Dependent Claim
57 words
The method of claim 2 further comprising the step of providing, above said covering layer, a gas containing the column V elements contained in said covering layer and having a gas pressure at least equal to the maximum vapor pressure attained by the column V elements in said covering layer when said dopant source layer is heated.
Claim 12
Dependent Claim
22 words
The method of claim 2, further comprising the step of choosing said temperature T to be between 500° C. and 860° C.
Claim 13
Independent Claim
204 words
A method for deposition of a selected dopant in a designated region of a column III-column V semiconductor material contiguous to a selected surface of the semiconductor material, the method comprising the steps of: depositing a dopant source layer, containing a p type dopant with a dopant concentration in the range 10 17 -10 21 cm -3 , in a column III-column V semiconductor material, on the selected surface; removing portions of the dopant source layer to expose portions of the selected surface and to form at least one mesa on the selected surface adjacent to the designated region, the mesa having a mesa top surface spaced apart from the selected surface; depositing a covering layer of column III-column V semiconductor material doped with an n type dopant having a concentration in the range of 10 16 -10 21 cm -1 , contiguous to the top surface of the mesa; and heating the semiconductor material to a selected temperature T in the range 500°-860° C. for a selected time interval, and allowing the p type dopant in the dopant source layer to diffuse, in a direction away from the covering layer and toward the selected surface, into the semiconductor material within the designated region.
Claim 14
Independent Claim
204 words
A method for deposition of a selected dopant in a designated region of a column III-column V semiconductor material contiguous to a selected surface of the semiconductor material, the method comprising the steps of: depositing a dopant source layer, containing a p type dopant with a dopant concentration in the range 10 17 -10 21 cm -3 , in a column III-column V semiconductor material, on the selected surface; removing portions of the dopant source layer to expose portions of the selected surface and to form at least one mesa on the selected surface adjacent to the designated region, the mesa having a mesa top surface spaced apart from the selected surface; depositing a covering layer of column III-column V semiconductor material doped with an n type dopant having a concentration in the range of 10 16 -10 21 cm -1 , contiguous to the top surface of the mesa; and heating the semiconductor material to a selected temperature T in the range 500°-860° C. for a selected time interval, and allowing the p type dopant in the dopant source layer to diffuse, in a direction away from the covering layer and toward the selected surface, into the semiconductor material within the designated region.
Claim 15
Dependent Claim
29 words
The method of claim 2, further comprising the step of also depositing said covering layer on at least a portion of said selected surface not covered by said mesa.
Claim 16
Dependent Claim
30 words
The method of claim 11, further comprising the step of depositing an insulating layer over said covering layer to suppress loss of column V elements when said mesa is heated.
Claim 17
Dependent Claim
30 words
The method of claim 12, further comprising the step of depositing an insulating layer over said covering layer to suppress loss of column V elements when said mesa is heated.
Claim 18
Dependent Claim
35 words
The method of claim 11, further comprising the step of positioning a layer of semiconductor material above said selected surface and said mesa, to suppress loss of column V elements when said mesa is heated.
Claim 19
Dependent Claim
56 words
The method of claim 11 further comprising the step of providing above said selected surface, a gas containing said column III-column V material contained in said covering layer and having a gas pressure at least equal to the maximum vapor pressure attained by said column V elements in said covering layer when said mesa is heated.
Claim 20
Dependent Claim
22 words
The method of claim 11, further comprising the step of choosing said temperature T to be between 500° C. and 860° C.
Claim 21
Independent Claim
168 words
A method for deposition of a selected p type dopant in a designed region in the interior of a semiconductor material that has several layers, the method comprising the steps of: depositing a first layer of column III-column V semiconductor material adjacent to the designated region; depositing a p type dopant in the first layer, where the p type dopant is chosen so that diffusion thereof is minimal until a threshold temperature T thr is exceeded; depositing a second layer, of column III-column V semiconductor material that is heavily doped with an n type dopant, contiguous to and over the first layer so that the first layer lies between the second layer and the designated region, where deposition of this second layer is carried out at a temperature that is substantially less than T thr ; and heating the first and second layers to a temperature T>T thr and allowing the p type dopant to diffuse toward and within the designated region and away from the second layer.
Claim 22
Independent Claim
168 words
A method for deposition of a selected p type dopant in a designed region in the interior of a semiconductor material that has several layers, the method comprising the steps of: depositing a first layer of column III-column V semiconductor material adjacent to the designated region; depositing a p type dopant in the first layer, where the p type dopant is chosen so that diffusion thereof is minimal until a threshold temperature T thr is exceeded; depositing a second layer, of column III-column V semiconductor material that is heavily doped with an n type dopant, contiguous to and over the first layer so that the first layer lies between the second layer and the designated region, where deposition of this second layer is carried out at a temperature that is substantially less than T thr ; and heating the first and second layers to a temperature T>T thr and allowing the p type dopant to diffuse toward and within the designated region and away from the second layer.
Claim 23
Dependent Claim
22 words
The method of claim 18, further comprising the step of choosing said temperature T to be between 500° C. and 860° C.
Claim 24
Independent Claim
210 words
A method for deposition of a selected p type dopant in a designated region contiguous to a selected surface of a column III-column V semiconductor material, the method being characterized by the steps of: forming first and second mesas of a second semiconductor material covering portions of the selected surface, the mesas being adjacent to one another but spaced apart by a selected distance sot hat portions of the selected surface are exposed contiguous to the designated region; depositing a dopant source layer on the exposed surface of the mesas and the selected surface, where the dopant source layer material includes a semiconductor material doped with the selected p type dopant and having a dopant concentration in the range 10 17 -10 21 cm -3 . depositing a covering layer on the dopant source layer contiguous to the dopant source layer, where the covering layer includes a semiconductor material doped with an n type dopant and having a dopant concentration in the range 10 16 -10 21 cm -3 ; and heating the dopant source layer to a selected temperature T between 500° C. and 860° for a selected time interval, and allowing the selected p type dopant to diffuse into the designated region and away from the covering layer.
Claim 25
Independent Claim
210 words
A method for deposition of a selected p type dopant in a designated region contiguous to a selected surface of a column III-column V semiconductor material, the method being characterized by the steps of: forming first and second mesas of a second semiconductor material covering portions of the selected surface, the mesas being adjacent to one another but spaced apart by a selected distance sot hat portions of the selected surface are exposed contiguous to the designated region; depositing a dopant source layer on the exposed surface of the mesas and the selected surface, where the dopant source layer material includes a semiconductor material doped with the selected p type dopant and having a dopant concentration in the range 10 17 -10 21 cm -3 . depositing a covering layer on the dopant source layer contiguous to the dopant source layer, where the covering layer includes a semiconductor material doped with an n type dopant and having a dopant concentration in the range 10 16 -10 21 cm -3 ; and heating the dopant source layer to a selected temperature T between 500° C. and 860° for a selected time interval, and allowing the selected p type dopant to diffuse into the designated region and away from the covering layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-06-30 | 1995-12-30 | 1996-06-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-06-30 | 1999-12-30 | 2000-06-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-06-30 | 2003-12-30 | 2004-06-30 | $7700.00 | Window Closed / Lapsed |