Process for producing a DFB laser with a diffraction grating superlattice

Claim 2

A process for producing semiconductor optical elements comprising: successively forming a first cladding layer consisting of a semiconductor layer of a first type of conductivity, an active layer, and a semiconductor superlattice layer on a semiconductor substrate of a first type of conductivity; periodically mixing crystals in said semiconductor superlattice layer; successively forming a second cladding layer consisting of a semiconductor layer of a second type of conductivity and a cap layer consisting of a semiconductor layer of the second type of conductivity on said semiconductor superlattice layer in which the crystal layers are periodically mixed; and forming a first electrode on said semiconductor substrate and a second electrode on said cap layer.

Claim 3

A process for producing semiconductor optical elements according to claim 1 wherein crystal layers are periodically mixed by periodically diffusing or implanting zinc, beryllium, tin, silicon, tellurium or selenium into the semiconductor superlattice layer.

Claim 4

A process for producing semiconductor optical elements according to claim 1 wherein crystal layers are directly mixed periodically in the semiconductor superlattice layer by annealing with a laser.

Claim 5

A process for producing semiconductor optical elements according to claim 1 wherein the semiconductor substrate comprises an n-type GaAs substrate, the first cladding layer comprises an n-type AlGaAs layer, the active layer comprises a GaAs layer, the semiconductor superlattice layer comprises Al x Ga 1-x As (x is 0.3 to 1) and Al y Ga 1-y As layers (y is 0 to 1 and less than x), the second cladding layers comprises a p-type AlGaAs layer, and the cap layer comprises a p-type GaAs layer.

Claim 6

A process for producing semiconductor optical elements according to claim 1 wherein the semiconductor substrate comprises a p-type GaAs substrate, the first cladding layer comprises a p-type AlGaAs layer, the active layer comprises a GaAs layer, the semiconductor superlattice layer comprises Al x Ga 1-x As (x is 0.3 to 1) and Al y Ga 1-y As layers (y is 0 to 1 and less than x), the second cladding layer comprises an n-type AlGaAs layer, and the cap layer comprises an n-type GaAs layer.

Claim 7

A process for producing semiconductor optical elements comprising: forming a first cladding layer, an active layer, a semiconductor superlattice layer which consists of a plurality of first semiconductor layers and a plurality of second semiconductor layers having a forbidden band width wider than that of the first semiconductor layers, and a masking layer in the order described; forming a periodic diffraction grating mask pattern in said masking layer; removing periodic portions of said masking layer through said diffraction grating mask pattern; forming a grating layer by mixing crystal layers in said semiconductor superlattic layer by diffusing or implanting impurities through said masking layer; removing said masking layer after said upper lattice layer has been formed; and forming a second cladding layer on the semiconductor grating layer which contains said mixed crystal regions.

Claim 8

A process for producing semiconductor optical elements comprising: forming a first cladding layer, an active layer, a semiconductor superlattice layer which consists of a plurality of first semiconductor layers and a plurality of second semiconductor layers having a forbidden band width wider than that of the first semiconductor layers, and a masking layer in the order described; forming a periodic diffraction grating mask pattern in said masking layer; removing periodic portions of said masking layer through said diffraction grating mask pattern; forming a grating layer by mixing crystal layers in said semiconductor superlattic layer by diffusing or implanting impurities through said masking layer; removing said masking layer after said upper lattice layer has been formed; and forming a second cladding layer on the semiconductor grating layer which contains said mixed crystal regions.

Claim 9

A process for producing semiconductor optical elements according to claim 6, wherein the masking layer consists of two kinds of semiconductor layers, and the layer on the side of the semiconductor superlattice layer is a semiconductor layer which withstands the removal of periodic masking layer portions.

Claim 10

A process for producing semiconductor optical elements according to claim 6 wherein the first semiconductor layer of the semiconductor superlattice layer comprises a GaAs layer, the second semiconductor layer comprises an Al x Ga 1-x As (where≦1), and the masking layer comprises a GaAs layer.

Claim 11

A process for producing semiconductor optical elements according to claim 6 wherein the impurity used in the fourth step is any one of zinc, beryllium, tin, silicon, tellurium or selenium.