US4751194A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Structures including quantum well wires and boxes
Assignee: Nokia Bell Labs
•
Filing: 1986-06-27
•
Granted: 1988-06-14
•
Expires: 2006-06-27
Abstract
Abstract A method of fabricating quantum well wires and boxes is described in which interdiffusion in a semiconductor having a compositional profile is enhanced by the presence of defects created by ion implantation in localized regions.
Inventors
- 👤 Joel B. Cibert
- 👤 Arthur C. Gossard
- 👤 Stephen J. Pearton
- 👤 Pierre M. Petroff
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 07:38
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3824; B; B82; B82Y; B82Y10/00; B82Y20/00; H10D; H10D62/00; H10D62/80; H10D62/81; H10D62/812; H10D62/813; H10D62/814; H10D62/815; H10D62/8181; H10P30/00; H10P30/20; H10P30/22; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/3413; Y; Y10; Y10S; Y10S438/00; Y10S438/936; Y10S438/962
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
99 words
A method of fabricating a semiconductor structure comprising the steps of implanting a species into localized regions of a semiconductor body having a compositional profile, said compositional profile comprising first and second heterojunctions thereby forming a potential well region, said species being implanted into said potential well region which comprises one or more quantum well wires, said implanting having a dose level less than the amorphization threshold, and creating defects, said semiconductor comprising at least two species, and rapidly annealing said semiconductor structure to thereby cause interdiffusion of at least two species of said semiconductor via defect enhanced mechanisms.
Claim 2
Independent Claim
99 words
A method of fabricating a semiconductor structure comprising the steps of implanting a species into localized regions of a semiconductor body having a compositional profile, said compositional profile comprising first and second heterojunctions thereby forming a potential well region, said species being implanted into said potential well region which comprises one or more quantum well wires, said implanting having a dose level less than the amorphization threshold, and creating defects, said semiconductor comprising at least two species, and rapidly annealing said semiconductor structure to thereby cause interdiffusion of at least two species of said semiconductor via defect enhanced mechanisms.
Claim 3
Dependent Claim
17 words
A method as recited in claim 1 in which said semiconductor body comprises Group III-V compound semiconductors.
Claim 4
Dependent Claim
15 words
A method as recited in claim 2 in which said Group III-V semiconductors comprise GaAlAs.
Claim 5
Dependent Claim
14 words
A method as recited in claim 3 in which said implanted species comprises Ga.
Claim 6
Dependent Claim
14 words
A method as recited in claim 1 in which said wires have varying widths.
Claim 7
Independent Claim
109 words
A method of fabricating a semiconductor structure comprising the steps of implanting a species into localized regions of a semiconductor body having a compositional profile, said compositional profile comprising first and second heterojunctions thereby forming a potential well region, said species being implanted into said potential well region, said regions comprising lines having varying widths, said implanting having a dose level less than the amorphization threshold, and creating defects, said semiconductor comprising at least two species, and rapidly annealing said semiconductor structure to thereby cause interdiffusion of at least two species of said semiconductor via defect enhanced mechanisms, said annealing produces a laterally varying bandgap of said semiconductor body.
Claim 8
Independent Claim
109 words
A method of fabricating a semiconductor structure comprising the steps of implanting a species into localized regions of a semiconductor body having a compositional profile, said compositional profile comprising first and second heterojunctions thereby forming a potential well region, said species being implanted into said potential well region, said regions comprising lines having varying widths, said implanting having a dose level less than the amorphization threshold, and creating defects, said semiconductor comprising at least two species, and rapidly annealing said semiconductor structure to thereby cause interdiffusion of at least two species of said semiconductor via defect enhanced mechanisms, said annealing produces a laterally varying bandgap of said semiconductor body.
Claim 9
Dependent Claim
20 words
A method as recited in claim 1 in which said implanting produces a plurality of boxes in said semiconductor body.
Claim 10
Dependent Claim
15 words
A method as recited in claim 7 in which said boxes comprise quantum well boxes.
Claim 11
Dependent Claim
9 words
A device fabricated by the method of claim 1.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-06-14 | 1991-12-14 | 1992-06-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-06-14 | 1995-12-14 | 1996-06-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-06-14 | 1999-12-14 | 2000-06-14 | $7700.00 | Window Closed / Lapsed |