Distributed feedback semiconductor laser
Abstract
Abstract The present invention relates to a semiconductor laser which oscillates in a single longitudinal mode and with a low threshold current and which exhibits a good mode stability against reflected light, and provides a structure of a distributed feedback semiconductor laser with modulation for a gain. The structure is such that gain producing regions are periodically arranged and that a substance transparent to laser radiation is buried between the regions. A layer including the gain regions is formed of a superlattice layer, and an impurity is diffused or implanted into periodic positions of the layer, whereby the transparent regions and the gain regions with little lattice damages can be readily formed.
Inventors
- 👤 Tadashi Fukuzawa
- 👤 Hiroyoshi Matsumura
- 👤 Shinji Tsuji
- 👤 Hitoshi Nakamura
- 👤 Kenji Hiruma
Bibliographic Details
Claims Analysis
Total Claims: 7References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1991-01-18 | 1991-07-20 | 1992-01-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-01-18 | 1995-07-20 | 1996-01-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-01-18 | 1999-07-20 | 2000-01-19 | $7700.00 | Window Closed / Lapsed |