EP0315387A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of diffusing Si into compound semiconductor and compound semiconductor device
Assignee: Mitsubishi Electric Corp
•
Filing: 1988-10-31
•
Granted: —
•
Expires: 2008-10-31
Abstract
Abstract A method of diffusing Si into compound semiconductor (1b) from a Si film (2) provided on a surface region of the compound semiconductor (1b), wherein the diffusion is conducted with providing a diffusion stopper layer (4) at a position of predetermined depth from the surface of the compound semiconductor (1b), which stopper layer (4) has a lower diffusion speed than that of the compound semiconductor (1b). A compound semiconductor device includes a compound semiconductor substrate (1a), a diffusion stopper layer (4) provided on the semiconductor substrate (1a), a compound semiconductor layer (1b) provided on the diffusion stopper layer (4), a Si film (2) provided on the semiconductor layer (1b), and Si diffusion regions (5) into which Si is diffused from the Si film (2) so as to reach the interface between the diffusion stopper layer (4) and the semiconductor substrate (1a).
Inventors
- 👤 Takashi C/O Mitsubishi Denki Murakami
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 01:50
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H10; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/17; H10P32/174; H10P76/00; H10P76/40; H01S5/2054; H01S5/2059; Y; Y10; Y10S; Y10S148/00; Y10S148/034; Y10S438/00; Y10S438/965
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
61 words
A method of diffusing Si into compound semiconductor from a Si film provided on a surface region of said compound semiconductor, wherein the diffusion is conducted with providing a diffusion stopper layer (4) at a position of predetermined depth from the surface of said compound semiconductor, which stopper layer (4) has a lower diffusion speed than that of said compound semiconductor.
Claim 2
Independent Claim
61 words
A method of diffusing Si into compound semiconductor from a Si film provided on a surface region of said compound semiconductor, wherein the diffusion is conducted with providing a diffusion stopper layer (4) at a position of predetermined depth from the surface of said compound semiconductor, which stopper layer (4) has a lower diffusion speed than that of said compound semiconductor.
Claim 3
Dependent Claim
38 words
A method of diffusing Si into compound semiconductor as defined in claim 1, wherein said compound semiconductor comprises Al x Ga 1-x As, and said diffusion stopper layer (4) comprises Al y Ga 1-y As (x < y).
Claim 4
Dependent Claim
27 words
A method of diffusing Si into compound semiconductor as defined in claim 1, wherein said compound semiconductor comprises In 1-x Ga x As y P 1-y .
Claim 5
Dependent Claim
27 words
A method of diffusing Si into compound semiconductor as defined in claim 1, wherein said compound semiconductor comprises (Al x Ga 1-x ) y In 1-y P.
Claim 6
Dependent Claim
44 words
A compound semiconductor device comprising: a compound semiconductor substrate (1a); a diffusion stopper layer (4) provided on said semiconductor substrate (1a); a compound semiconductor layer (1b) provided on said diffusion stopper layer (4); a Si film (2) provided on said semiconductor layer (1b); and
Claim 7
Dependent Claim
44 words
A compound semiconductor device comprising: a compound semiconductor substrate (1a); a diffusion stopper layer (4) provided on said semiconductor substrate (1a); a compound semiconductor layer (1b) provided on said diffusion stopper layer (4); a Si film (2) provided on said semiconductor layer (1b); and
Claim 8
Dependent Claim
31 words
Si diffusion regions (5) into which Si is diffused from said Si film (2) so as to reach the interface between said diffusion stopper layer (4) and said semiconductor substrate (1a).
Claim 9
Dependent Claim
31 words
Si diffusion regions (5) into which Si is diffused from said Si film (2) so as to reach the interface between said diffusion stopper layer (4) and said semiconductor substrate (1a).
Claim 10
Dependent Claim
45 words
A compound semiconductor device as defined in claim 5, wherein said semiconductor substrate (1a) comprises Al x Ga 1-x As, said diffusion stopper layer (4) comprises Al y Ga 1-y As (x < y), and said semiconductor layer (1b) comprises Al x Ga 1-x As.
Claim 11
Dependent Claim
59 words
A compound semiconductor device as defined in claim 5, wherein said semiconductor substrate (1a) and said semiconductor layer (1b) comprise In 1-x Ga x As y P 1-y . 8. A compound semiconductor device as defined in claim 5, wherein said semiconductor substrate (1a) and said semiconductor layer (1b) comprise (Al x Ga 1-x ) y In 1-y P.
Claim 12
Dependent Claim
152 words
A laser diode utilizing compound semiconductor, comprising: a first conductivity type compound semiconductor substrate (6a); a first conductivity type compound semiconductor lower cladding layer (7a) provided on said semiconductor substrate (6a); a diffusion stopper layer (4) comprising first conductivity type compound semiconductor, which is put between by the upper and lower portions of said lower cladding layer (7a); a first conductivity type compound semiconductor active layer (8) provided on said lower cladding layer (7a); a second conductivity type compound semiconductor upper cladding layer (9a) provided on said active layer (8); a second conductivity type compound semiconductor contact layer (10a) provided on said upper cladding layer (9a); Si films (2) provided on said contact layer (10a); and Si diffusion regions (5) into which Si is diffused from said Si films (2) so as to reach the interface between said diffusion stopper layer (4) and said lower portion of said lower cladding layer (7a).
Claim 13
Dependent Claim
152 words
A laser diode utilizing compound semiconductor, comprising: a first conductivity type compound semiconductor substrate (6a); a first conductivity type compound semiconductor lower cladding layer (7a) provided on said semiconductor substrate (6a); a diffusion stopper layer (4) comprising first conductivity type compound semiconductor, which is put between by the upper and lower portions of said lower cladding layer (7a); a first conductivity type compound semiconductor active layer (8) provided on said lower cladding layer (7a); a second conductivity type compound semiconductor upper cladding layer (9a) provided on said active layer (8); a second conductivity type compound semiconductor contact layer (10a) provided on said upper cladding layer (9a); Si films (2) provided on said contact layer (10a); and Si diffusion regions (5) into which Si is diffused from said Si films (2) so as to reach the interface between said diffusion stopper layer (4) and said lower portion of said lower cladding layer (7a).
Claim 14
Dependent Claim
83 words
A laser diode utilizing compound semiconductor as defined in claim 9, wherein said semiconductor substrate (6a) comprises p type GaAs, said lower cladding layer (7a) comprises p type Al z Ga 1-z As, said diffusion stopper layer (4) comprises p type Al y Ga 1-y As (y > z), said active layer (8) comprises p type Al w Ga 1-w As, said upper cladding layer (9a) comprises n type Al z Ga 1-z As, and said contact layer (10a) comprises n type GaAs.
Claim 15
Dependent Claim
25 words
A laser diode utilizing compound semiconductor as defined in claim 9, wherein said compound semiconductor comprises In 1-x Ga x As y P 1-y .
Claim 16
Dependent Claim
25 words
A laser diode utilizing compound semiconductor as defined in claim 9, wherein said compound semiconductor comprises (Al x Ga 1-x ) y In 1-y P.
Claim 17
Dependent Claim
152 words
A laser diode utilizing compound semiconductor, comprising: a second conductivity type compound semiconductor substrate (6b); a second conductivity type compound semiconductor lower cladding layer (7b) provided on said semiconductor substrate (6b); a first conductivity type compound semiconductor active layer (8) provided on said lower cladding layer (7b); a first conductivity type compound semiconductor upper cladding layer (9b) provided on said active layer (8); a diffusion stopper layer (4b) comprising first conductivity type compound semiconductor, which is put between by the upper and lower portions of said upper cladding layer (9b); a first conductivity type compound semiconductor contact layer (10b) provided on said upper cladding layer (9b); Si films (2) provided on said contact layer (10b); and Si diffusion regions (5) into which Si is diffused from said Si films (2) so as to reach the interface between said diffusion stopper layer (4b) and said lower portion of said upper cladding layer (9b).
Claim 18
Dependent Claim
152 words
A laser diode utilizing compound semiconductor, comprising: a second conductivity type compound semiconductor substrate (6b); a second conductivity type compound semiconductor lower cladding layer (7b) provided on said semiconductor substrate (6b); a first conductivity type compound semiconductor active layer (8) provided on said lower cladding layer (7b); a first conductivity type compound semiconductor upper cladding layer (9b) provided on said active layer (8); a diffusion stopper layer (4b) comprising first conductivity type compound semiconductor, which is put between by the upper and lower portions of said upper cladding layer (9b); a first conductivity type compound semiconductor contact layer (10b) provided on said upper cladding layer (9b); Si films (2) provided on said contact layer (10b); and Si diffusion regions (5) into which Si is diffused from said Si films (2) so as to reach the interface between said diffusion stopper layer (4b) and said lower portion of said upper cladding layer (9b).
Claim 19
Dependent Claim
83 words
A laser diode utilizing compound semiconductor as defined in claim 13, wherein said semiconductor substrate (6b) comprises n type GaAs, said lower cladding layer (7b) comprises n type Al z Ga 1-z As, said active layer (8) comprises p type Al w Ga 1-w As, said upper cladding layer (9b) comprises p type Al z Ga 1-z As, said diffusion stopper layer (4b) comprises p type Al y Ga 1-y As (y > z), and said contact layer (10b) comprises p type GaAs.
Claim 20
Dependent Claim
25 words
A laser diode utilizing compound semiconductor as defined in claim 13, wherein said compound semiconductor comprises In 1-x Ga x As y P 1-y .
Claim 21
Dependent Claim
25 words
A laser diode utilizing compound semiconductor as defined in claim 13, wherein said compound semiconductor comprises (Al x Ga 1-x ) y In 1-y P.
Claim 22
Dependent Claim
36 words
A laser diode utilizing compound semiconductor as defined in claim 13, which further comprises a light guide layer (11) provided between said diffusion stopper layer (4b) and said upper portion of said upper cladding layer (9b).
Claim 23
Dependent Claim
92 words
A laser diode utilizing compound semiconductor as defined in claim 17, wherein said semiconductor substrate (6b) comprises n type GaAs, said lower cladding layer (7b) comprises n type Al z Ga 1-z As, said active layer (8) comprises p type Al w Ga 1-w As, said upper cladding layer (9b) comprises p type Al z Ga 1-z As, said diffusion stopper layer (4b) comprises p type Al y Ga 1-y As (y > z), said contact layer (10b) comprises p type GaAs, and said light guide layer (11) comprises AlGaAs series superlattice.
Claim 24
Dependent Claim
25 words
A laser diode utilizing compound semiconductor as defined in claim 17, wherein said compound semiconductor comprises In 1-x Ga x As y P 1-y .
Claim 25
Dependent Claim
25 words
A laser diode utilizing compound semiconductor as defined in claim 17, wherein said compound semiconductor comprises (Al x Ga 1-x ) y In 1-y P.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.